{"type": "FeatureCollection", "features": [{"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.855, 46.6133]}, "properties": {"company": "Infineon Technologies", "fab_name": "Villach 300mm Thin-Wafer Power Fab (Innovation Fab)", "site_city": "Villach", "country": "Austria", "in_eu": true, "lat": 46.6133, "lon": 13.855, "coord_precision": "site", "product_types": ["power", "automotive power MOSFET", "IGBT", "power IC", "analog", "GaN"], "wafer_size_mm": [300], "process_nodes": ["300mm thin-wafer silicon power MOSFET (CoolMOS, down to ~20um wafer thickness)", "300mm thin-wafer IGBT", "300mm power GaN"], "finest_node": "300mm thin-wafer silicon power (node in nm not disclosed)", "status": "operational", "category": "volume_specialty", "expected_production_year": null, "confidence": "high", "notes": "Fully automated ~EUR1.6bn 300mm thin-wafer silicon power fab, opened 17 Sep 2021; co-forms 'One Virtual Fab' with Dresden 300mm. First 300mm power GaN wafers announced here (GaN-on-Si incidental; core line is silicon power). SiC not run on this line.", "sources": ["https://www.infineon.com/regional/austria/innovation-fab-40", "https://eepower.com/news/infineons-300mm-thin-wafer-fab-completes-qualification-begins-production/", "https://www.eetasia.com/infineon-opens-high-tech-chip-factory-for-power-electronics-on-300mm-wafers/", "https://www.eetasia.com/18052001-infineon-to-open-new-villach-fab/", "https://www.eetimes.com/infineon-opens-e1-6bn-300mm-fab-in-villach-ahead-of-schedule/"], "country_iso": "AT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "GaN", "Power", "SiC"], "site_id": "infineon-technologies__villach", "id": "infineon-technologies-villach-300mm-gan", "year_opened": 2021, "year_first_production": null, "investment_eur_million": 1600.0, "employees": 5500, "region": "Carinthia", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 146.5, "authority": "European Commission (DG Competition), state aid notified by Austria", "instrument": "EC state-aid approval — Austria joining IPCEI on Microelectronics (2018 IPCEI, \"IPCEI ME I\")", "decision_date": "2021-03-23", "case_id": "SA.56606 (2020/N)", "project_capex_eur_million": 1600, "source": "https://ec.europa.eu/commission/presscorner/api/files/document/print/en/ip_21_1343/IP_21_1343_EN.pdf", "note": "EC approved SA.56606 on 2021-03-23: EUR146.5m total Austrian public support (notified Dec 2020) for Austria joining the Dec-2018 IPCEI on Microelectronics, split across THREE beneficiaries — Infineon Technologies Austria, AT&S Austria, and NXP Semiconductors Austria — expected to unlock ~EUR530m private investment; no official per-company breakdown is published in the Commission decision or press release. Austrian press (Kurier, APA/Science, Der Standard, all reporting on the Villach Innovation Fab opening) independently and consistently reports Infineon's Villach R&D+production project specifically received ~EUR100m of federal funding out of a ~EUR150m microelectronics program (i.e. the Infineon share within/around SA.56606), but this EUR100m figure is press-sourced, not from an official EC/Austrian government per-beneficiary disclosure, so amount_eur_million above reports the verifiable OFFICIAL total (EUR146.5m across 3 firms) rather than the unofficial Infineon-only press estimate. Regional/municipal (Land Kaernten, Stadt Villach) support amounts were explicitly not disclosed by officials. A later, larger Austrian IPCEI ME/CT tranche (up to EUR225m for 5 partners incl. Infineon, per BMK/BMWA) is a separate, subsequent scheme not covered here.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.ipcei-me.eu/2021/03/23/state-aid-commission-approves-e146-5-million-austrian-support-in-favour-of-companies-joining-research-and-innovation-project-in-microelectronics/", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Europe's first 300mm automated thin-wafer power line, co-integrated with Infineon's Dresden fab and leading volume production of 300mm GaN-on-Si for automotive and industrial sectors."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.855, 46.6133]}, "properties": {"company": "Infineon Technologies", "fab_name": "Villach 200mm SiC Fab (CoolSiC)", "site_city": "Villach", "country": "Austria", "in_eu": true, "lat": 46.6133, "lon": 13.855, "coord_precision": "site", "product_types": ["SiC", "power", "CoolSiC MOSFET", "SiC diode", "EV power", "industrial power"], "wafer_size_mm": [200], "process_nodes": ["200mm SiC trench MOSFET", "200mm silicon carbide power", "SiC MOSFET"], "finest_node": "200mm SiC (CoolSiC) device process", "status": "operational", "category": "compound_semi", "expected_production_year": null, "confidence": "high", "notes": "200mm SiC device front-end; first 200mm SiC products released to customers from Q1 2025; advanced 200mm SiC milestone announced 2025. Villach SiC/GaN competence + EPI center; part of WBG 'One Virtual Fab' with Kulim (MY). Distinct line from the 300mm Si power fab; device fab only (no public in-house boule growth).", "sources": ["https://www.infineon.com/press-release/2025/infxx202502-055", "https://www.bnn.at/infineon-releasing-first-products-based-on-200-mm-silicon-carbide-sic-technology-to-customers/", "https://www.powerelectronicsnews.com/infineon-delivers-its-first-silicon-carbide-products-to-customers-built-on-advanced-200-mm-sic-wafer-manufacturing-technology/", "https://semiconductorx.com/semiconductor-fab.php?Fab=FAB024", "https://www.infineon.com/regional/austria/innovation-fab-40", "https://www.irel40.eu/infineon-technologies-austria-ag"], "country_iso": "AT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["GaN", "Power", "SiC", "Substrate/epi"], "site_id": "infineon-technologies__villach", "id": "infineon-technologies-villach-200mm-sic", "year_opened": 2025, "year_first_production": null, "investment_eur_million": null, "employees": 5500, "region": "Carinthia", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Europe's first 200mm SiC device fab, ramping volume production for EV and industrial power; feeds Infineon's vertically integrated wide-bandgap strategy in Austria."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.855, 46.6133]}, "properties": {"company": "Infineon Technologies", "fab_name": "Villach 200mm Silicon Power/Analog Fab (legacy)", "site_city": "Villach", "country": "Austria", "in_eu": true, "lat": 46.6133, "lon": 13.855, "coord_precision": "site", "product_types": ["power", "analog", "automotive power MOSFET", "IGBT", "power IC"], "wafer_size_mm": [200], "process_nodes": ["200mm silicon power MOSFET (CoolMOS)", "200mm power/analog mixed-signal"], "finest_node": "200mm power/analog (node in nm not disclosed)", "status": "operational", "category": "volume_specialty", "expected_production_year": null, "confidence": "medium", "notes": "Long-standing 200mm silicon power/analog workhorse for automotive and industrial; predates the 300mm expansion. Distinct silicon line from both the 300mm Si fab and the 200mm SiC fab. Infineon does not break out specific product families or nm nodes per building.", "sources": ["https://www.infineon.com/regional/austria", "https://www.eetasia.com/18052001-infineon-to-open-new-villach-fab/", "https://en.wikipedia.org/wiki/Infineon_Technologies_Austria", "https://www.irel40.eu/infineon-technologies-austria-ag"], "country_iso": "AT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Power", "SiC"], "site_id": "infineon-technologies__villach", "id": "infineon-technologies-villach-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 5500, "region": "Carinthia", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "A longstanding power-device workhorse predating Infineon's 300mm expansion; supplies automotive and industrial markets with silicon MOSFETs and IGBTs."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.3925, 46.9603]}, "properties": {"company": "ams OSRAM", "fab_name": "Premstaetten 200mm specialty fab (full-service foundry)", "site_city": "Premstaetten (Unterpremstaetten, Graz area)", "country": "Austria", "in_eu": true, "lat": 46.9603, "lon": 15.3925, "coord_precision": "site", "product_types": ["analog", "mixed-signal", "sensors", "optical sensors", "image sensors", "automotive", "medical"], "wafer_size_mm": [200], "process_nodes": ["350nm CMOS/mixed-signal", "180nm CMOS specialty analog", "180nm BCD", "High-Voltage CMOS", "Ultra-low-noise CMOS", "SiGe-BiCMOS"], "finest_node": "180nm (specialty analog/BCD; exact nm not publicly confirmed)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "medium", "notes": "HQ and main European silicon wafer fab. 200mm specialty analog/mixed-signal/sensor CMOS; runs full-service foundry MPW service. Company does not publicly disclose CMOS nm node; 180nm is a reasonable estimate.", "sources": ["https://ams-osram.com/products/full-service-foundry", "https://ams-osram.com/news/blog/full-service-foundry-get-a-rapid-design-start-with-our-multi-project-wafer-offering", "https://en.wikipedia.org/wiki/AMS-Osram", "https://ams-osram.com/about-us/locations-distribution/headquarters"], "country_iso": "AT", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Foundry-services", "Sensors"], "site_id": "ams-osram__premstaetten-unterpremstaetten-graz-area", "id": "ams-osram-premstaetten-unt-200mm", "year_opened": 1983, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Styria", "last_verified": "2026-06", "owner": {"parent": "ams OSRAM AG (SIX: AMS)", "ultimate_owner": "MULTI", "owner_country_iso": "AT", "ownership_type": "public", "note": "Austrian AG listed on SIX Swiss Exchange; free float >90% (2025), largest single stakes low-single-digit, no controlling shareholder (Temasek, largest post-2020, diluted via capital raises)", "source": "https://ams-osram.com/about-us/investor-relations/share-capital", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17"}, "capacity": {"value": 6500, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "whose production capacity was expanded from 5,200 to 6,500 WSPM (wafer starts per month)", "year": 2005, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "ams (austriamicrosystems) corporate documentation"}, "summary": "Austria's headquarters fab for analog and sensor CMOS; 40-year foundry serving automotive and medical mixed-signal markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.3925, 46.9603]}, "properties": {"company": "ams OSRAM", "fab_name": "Premstaetten new front-end fab (European Chips Act)", "site_city": "Premstaetten (Unterpremstaetten, Graz area)", "country": "Austria", "in_eu": true, "lat": 46.9603, "lon": 15.3925, "coord_precision": "site", "product_types": ["optical sensors", "optoelectronic sensors", "analog", "power", "automotive", "medical", "industrial"], "wafer_size_mm": [200], "process_nodes": ["BCD", "Through-Silicon-Via (TSV)", "optical filters"], "finest_node": "BCD (geometry not disclosed)", "status": "announced", "expected_production_year": "2030", "category": "volume_specialty", "confidence": "medium", "notes": "New front-end fab at Premstaetten HQ, distinct from existing 200mm fab. EUR227m EU grant approved Mar 2025; ~EUR567m total; full production targeted 2030. BCD+TSV+optical filters for opto sensors. Wafer diameter undisclosed (assumed 200mm).", "sources": ["https://silicon-saxony.de/en/ams-osram-eu-commission-approves-an-investment-grant-of-up-to-e227-million-for-a-new-semiconductor-production-facility-in-austria/", "https://www.eenewseurope.com/en/ams-osram-plans-austrian-opto-chiplet-fab-seeks-e200-million-funding/", "https://ec.europa.eu/commission/presscorner/api/files/document/print/en/ip_25_589/IP_25_589_EN.pdf", "https://www.gasworld.com/story/ams-osram-secures-e227m-for-austrian-semiconductor-facility/2151763.article/", "https://ams-osram.com/news/press-releases/european-chips-act"], "country_iso": "AT", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Photonics/Opto", "Power", "Sensors"], "site_id": "ams-osram__premstaetten-unterpremstaetten-graz-area", "id": "ams-osram-premstaetten-unt-200mm-2", "year_opened": null, "year_first_production": 2030, "investment_eur_million": 567.0, "employees": null, "region": "Styria", "last_verified": "2026-06", "owner": {"parent": "ams OSRAM AG (SIX: AMS)", "ultimate_owner": "MULTI", "owner_country_iso": "AT", "ownership_type": "public", "note": "Austrian AG listed on SIX Swiss Exchange; free float >90% (2025), largest single stakes low-single-digit, no controlling shareholder (Temasek, largest post-2020, diluted via capital raises)", "source": "https://ams-osram.com/about-us/investor-relations/share-capital", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 227, "authority": "European Commission (DG Competition), under EU State aid rules / European Chips Act, Article 107(3)(c) TFEU; aid granted by Austria", "instrument": "EC state-aid approval (direct grant) under the EU Chips Act \"first-of-a-kind\" facility framework; project separately granted Integrated Production Facility (IPF) status", "decision_date": "2025-02-24 (ams-OSRAM press release states 24 Feb 2025; Global Trade Alert lists 23 Feb 2025 as the implementation/decision date — sources differ by one day)", "case_id": "Not publicly disclosed as an SA.xxxxx number in available sources. A related, separate Commission decision reference C(2025)6738 exists for the project's Integrated Production Facility (IPF) status under the Chips Act, dated 13 Oct 2025 (project name \"OS4EU\") — this is distinct from the Feb 2025 state-aid clearance.", "project_capex_eur_million": 567, "source": "https://ams-osram.com/news/press-releases/european-chips-act", "note": "EC approved an Austrian direct grant of up to EUR 227 million (~40% of the EUR 567 million total project investment, matching the input's inv figure exactly) on 23-24 Feb 2025 for ams-OSRAM's new front-end/CMOS wafer facility in Premstaetten, under EU State aid rules tied to the Chips Act. This is a confirmed APPROVED aid amount, not a pledge. The formal SA case number could not be located in public sources (ams-OSRAM press release, legal-bulletin coverage, trade-policy tracker, and EC's own Chips Act pages all omit it); only a related IPF-status decision reference (C(2025)6738, Oct 2025) is publicly listed.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.concurrences.com/en/bulletin/news-issues/february-2025/the-eu-commission-approves-a-eur227m-austrian-state-aid-measure-to-support-a", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "New greenfield fab anchored by EUR 227m EU Chips Act funding; Austria's first volume production line for optical-sensor BCD technology."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [3.5955, 50.8565]}, "properties": {"company": "BelGaN", "fab_name": "Oudenaarde Fab (ex-onsemi Fab2 / AMIS / Mietec) — BelGaN GaN line", "site_city": "Oudenaarde", "country": "Belgium", "in_eu": true, "lat": 50.8565, "lon": 3.5955, "coord_precision": "city", "product_types": ["GaN power", "GaN", "analog", "BCD", "mixed-signal CMOS", "automotive"], "wafer_size_mm": [150], "process_nodes": ["350nm mixed-signal CMOS/BCD", "GaN-on-silicon power"], "finest_node": "0.35um (350nm) mixed-signal CMOS/BCD", "status": "cancelled", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Ex-Mietec(1983)->Alcatel Microelectronics->AMI->onsemi 'Fab2'; bought from onsemi early 2022 to run GaN-on-Si power (e/d-mode HEMT) on inherited 150mm analog CMOS/BCD line. Bankrupt Jul 2024, ~440 jobs lost; GaN program dead, equipment auctioned ~EUR23m.", "sources": ["https://www.semiconductor-today.com/news_items/2025/apr/belgan-110425.shtml", "https://atreg.com/case-studies/atreg-advises-onsemi-on-disposition-of-operational-150mm-oudenaarde-belgium-fab/", "https://www.eenewseurope.com/en/belgian-wafer-fab-sold-to-gan-startup-with-china-connections/", "https://compoundsemiconductor.net/article/114243/BelGaN_acquires_ON_Semiconductor_Belgium_fab", "https://evertiq.com/design/2025-04-02-belgans-facility-to-be-repurposed-for-photonic-chip-production", "https://www.belganewsagency.eu/former-belgan-site-to-become-europes-first-full-fledged-photonic-chip-centre"], "country_iso": "BE", "status_group": "dead", "finest_node_nm": 350.0, "max_wafer_mm": 150, "tags": ["Analog/Mixed-signal", "Automotive", "GaN", "Power", "RF"], "site_id": "belgan__oudenaarde", "id": "belgan-oudenaarde-150mm-gan", "year_opened": 2022, "year_first_production": null, "investment_eur_million": null, "employees": 440, "region": "East Flanders", "last_verified": "2026-06", "owner": {"parent": "None (bankrupt)", "ultimate_owner": "Unknown", "owner_country_iso": "MULTI", "ownership_type": "unknown", "note": "Filed for bankruptcy July 2024; previously joint venture of Rockley Management (HK) Ltd and Wuxi Group Ltd (HK-linked investors); fab sold to unnamed European investor 2024; company no longer operational", "source": "https://www.semiconductor-today.com/news_items/2025/apr/belgan-110425.shtml", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Heritage analog fab repurposed for GaN power semiconductors; collapsed 2024 as first casualty of the EU chips market reset."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [3.5955, 50.8565]}, "properties": {"company": "Thema Foundries", "fab_name": "Oudenaarde Photonics Fab (ex-BelGaN site)", "site_city": "Oudenaarde", "country": "Belgium", "in_eu": true, "lat": 50.8565, "lon": 3.5955, "coord_precision": "city", "product_types": ["photonics", "photonic integrated circuits"], "wafer_size_mm": [], "process_nodes": ["photonics (platform/node undisclosed)"], "finest_node": "unknown", "status": "announced", "expected_production_year": "2027", "category": "foundry", "confidence": "medium", "notes": "Repurposing of ex-BelGaN site bought from curators for EUR20.35m (~Aug 2025); EUR200-250m planned to retool cleanrooms for integrated photonics (PICs) for AI datacenters/automotive, explicitly NOT GaN. imec supports business case/licensing; staff ramp ~100 (2026) to ~500-600 (2030); ~18-month build-out. Wafer size/platform undisclosed.", "sources": ["https://www.semiconductor-today.com/news_items/2025/apr/belgan-110425.shtml", "https://www.belganewsagency.eu/former-belgan-site-to-become-europes-first-full-fledged-photonic-chip-centre", "https://www.electrooptics.com/article/thema-foundries-named-new-owner-former-belgan-fab", "https://bits-chips.com/article/former-belgan-fab-in-oudenaarde-to-manufacture-photonic-chips/", "https://manda.be/articles/200-million-euro-chip-revival-in-oudenaarde/", "https://www.brusselstimes.com/1711256/first-european-photonics-plant-boosts-belgian-chip-industry"], "country_iso": "BE", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": null, "tags": ["Automotive", "GaN", "Photonics/Opto"], "site_id": "thema-foundries__oudenaarde", "id": "thema-foundries-oudenaarde", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 200.0, "employees": 500, "region": "East Flanders", "last_verified": "2026-06", "owner": {"parent": "Thema Foundries BV (Belgium, KBO 1026.517.346) — fab site held via subsidiary Bellaser BV", "ultimate_owner": "Privately held (Herwig Van Hove / Vahoca group)", "owner_country_iso": "MULTI", "ownership_type": "private", "note": "Fab site is former BelGaN GaN-power fab, which went bankrupt in 2024 after Chinese investors withdrew funding; Thema Foundries BV (founded Aug 2025) acquired the buildings via subsidiary Bellaser BV to convert to photonic-chip (PIC) production — not a continuation of the prior GaN power business. This is not a formal JV with disclosed percentage splits; it is a private company with an opaque, multi-jurisdiction (Singapore + Cyprus) holding/financing structure and an undisclos", "source": "https://www.pappers.be/nl/company/thema-foundries-1026517346", "confidence": "low", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://bits-chips.com/article/thema-foundries-to-revive-oudenaarde-fab-for-photonic-chip-production/"}, "summary": "Thema Foundries is repurposing a shuttered GaN fab site to build Europe's first integrated-photonics foundry for AI datacenter optics, targeting 500+ staff by 2030 with EUR 200–250m investment."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [4.6797, 50.8631]}, "properties": {"company": "imec", "fab_name": "imec 300mm advanced CMOS R&D pilot line (Leuven) incl. NanoIC High-NA EUV extension", "site_city": "Leuven", "country": "Belgium", "in_eu": true, "lat": 50.8631, "lon": 4.6797, "coord_precision": "site", "product_types": ["logic", "advanced CMOS R&D", "memory", "3D integration", "photonics", "High-NA EUV pathfinding"], "wafer_size_mm": [300], "process_nodes": ["sub-7nm advanced CMOS R&D", "A14 (nanosheet) roadmap", "A10 (nanosheet) roadmap", "A7 (CFET) roadmap", "EUV / High-NA EUV patterning", "High-NA EUV (0.55 NA) single-print pathfinding"], "finest_node": "sub-2nm logic R&D (A14/A10 nanosheet baseline, A7 CFET roadmap; High-NA EUV single-print)", "status": "expanding", "expected_production_year": "2026", "category": "rd_pilot", "confidence": "high", "notes": "imec HQ campus 300mm R&D pilot line (~7,200 m2, 24/7), described as world's most advanced 300mm R&D cleanroom. EU Chips Act / RRF co-funded NanoIC open-access pilot line extends this 300mm line with ASML EXE:5200 High-NA EUV; inaugurated 9 Feb 2026. R&D only, not volume production.", "sources": ["https://www.imec-int.com/en/infrastructure", "https://www.imec-int.com/en/about-us", "https://www.nanoic-project.eu/en/events/official-inauguration-nanoic-pilot-line", "https://www.photonics.com/Articles/Imec-Installs-High-NA-EUV-System-Week-in-Brief/a72072", "https://www.reuters.com/business/imec-opens-25-bln-euros-chip-pilot-line-europe-looks-strengthen-ai-hand-2026-02-09/", "https://www.imec-int.com/en/press/imec-inaugurates-nanoic-pilot-line-accelerating-innovation-sub-2nm-systems-chip"], "country_iso": "BE", "status_group": "live", "finest_node_nm": 2.0, "max_wafer_mm": 300, "tags": ["Logic", "Memory/NVM", "Photonics/Opto", "Power", "RF"], "site_id": "imec__leuven", "id": "imec-leuven-300mm", "year_opened": 2026, "year_first_production": null, "investment_eur_million": 2500.0, "employees": 5500, "region": "Flanders", "last_verified": "2026-06", "owner": {"parent": "None (core entity: IMEC vzw non-profit; Fidimec N.V. listed as corporate parent in databases but no public ownership disclosed)", "ultimate_owner": "Flemish Government / non-profit (no single private ultimate owner)", "owner_country_iso": "BE", "ownership_type": "foundation", "note": "Structured as non-profit association (vzw) headquartered Leuven, Belgium; founded 1984 by Flemish Government with initial €62M public investment; operates as independent research institute; ~20% funding from Flemish Government, ~80% from industry; governed by board with industry, university, and government delegates; operates centers in Netherlands and Spain under imec trademark", "source": "https://www.imec-int.com/en/about-us", "confidence": "medium", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 432.63, "authority": "Chips Joint Undertaking (Chips JU) / European Commission, Horizon Europe — EU Chips Act pilot-line instrument (not an Art.107 SA-case state-aid decision; no SA.xxxxx exists for this project)", "instrument": "EU Chips Act direct grant via Chips Joint Undertaking/Horizon Europe (NanoIC pilot-line R&D grant), plus separately reported aggregate EU+Flemish public co-funding for the wider pilot line", "decision_date": "2025 (year only — imec's official 2025 overview states the Chips JU grant agreement was signed with imec \"in 2025,\" marking the project's official start; exact day/month not publicly disclosed. Project duration listed as 2024–2028)", "case_id": "CORDIS Project ID 101183277 \"NanoIC Pilot Line\" (call HORIZON-JU-Chips-2023-RIA-CPL-1); no EC SA.xxxxx state-aid case number is publicly documented for imec Leuven", "project_capex_eur_million": 2500, "source": "https://cordis.europa.eu/project/id/101183277", "note": "No EC Article-107 state-aid SA.xxxxx decision exists for this project — imec/Belgium is absent from the Commission's published list of Chips Act \"first-of-a-kind facility\" SA decisions. Instead, funding runs through the EU Chips Act pilot-line mechanism: a Chips JU/Horizon Europe grant (CORDIS ID 101183277, \"NanoIC,\" net EU contribution €432.63M against a €521.03M project cost — reported here as the approved amount) layered under a larger publicly reported €2.5bn total pilot-line investment (~€1.4-1.45bn EU+Flemish public funds, ~€1.1bn industry incl. ASML), which matches the input record's €2,500M capex figure. A separate, not-yet-finalized Flemish/EU cleanroom expansion (up to €750M EU + €750M Flemish loan) was reported as under negotiation but is not confirmed as approved.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/technology/european-labs-led-by-imec-receive-27-billion-chips-act-funding-2024-05-21/", "channel": "eu_direct", "channel_label": "EU direct (Chips JU)"}, "summary": "Belgium's open-access advanced-node R&D anchor, home to Europe's first High-NA EUV pathfinding lab launched Feb 2026 for early-stage logic and 3D chiplet development."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [4.6797, 50.8631]}, "properties": {"company": "imec", "fab_name": "imec 200mm cleanroom (Leuven)", "site_city": "Leuven", "country": "Belgium", "in_eu": true, "lat": 50.8631, "lon": 4.6797, "coord_precision": "site", "product_types": ["GaN-on-Si power/RF", "silicon photonics", "MEMS", "image sensors", "specialty prototyping"], "wafer_size_mm": [200], "process_nodes": ["GaN-on-silicon (power/RF)", "silicon photonics", "MEMS/sensor prototyping", "development-on-demand / More-than-Moore"], "finest_node": "unknown (specialty/More-than-Moore prototyping line; not branded with a CMOS node)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "200mm cleanroom on Leuven campus (~5,200 m2, ~1,750 m2 class 1) for development-on-demand, prototyping and low-volume manufacturing. Distinct building/line from the 300mm CMOS pilot; GaN-on-Si, silicon photonics, MEMS and sensors.", "sources": ["https://www.imec-int.com/en/infrastructure", "https://www.imec-int.com/en/about-us", "https://www.imec-int.com/en/press/imec-inaugurates-nanoic-pilot-line-accelerating-innovation-sub-2nm-systems-chip"], "country_iso": "BE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["GaN", "MEMS", "Photonics/Opto", "Power", "RF", "Sensors"], "site_id": "imec__leuven", "id": "imec-leuven-200mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 5500, "region": "Flanders", "last_verified": "2026-06", "owner": {"parent": "None (core entity: IMEC vzw non-profit; Fidimec N.V. listed as corporate parent in databases but no public ownership disclosed)", "ultimate_owner": "Flemish Government / non-profit (no single private ultimate owner)", "owner_country_iso": "BE", "ownership_type": "foundation", "note": "Structured as non-profit association (vzw) headquartered Leuven, Belgium; founded 1984 by Flemish Government with initial €62M public investment; operates as independent research institute; ~20% funding from Flemish Government, ~80% from industry; governed by board with industry, university, and government delegates; operates centers in Netherlands and Spain under imec trademark", "source": "https://www.imec-int.com/en/about-us", "confidence": "medium", "verified": null, "as_of": "2026-07-17"}, "summary": "Academic development line for GaN-on-Si, silicon photonics, and MEMS prototyping; spins out and partners with industry on next-generation analog and photonic systems."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [18.142, 49.457]}, "properties": {"company": "onsemi", "fab_name": "Rožnov 150mm Silicon Power Device Fab", "site_city": "Rožnov pod Radhoštěm", "country": "Czech Republic", "in_eu": true, "lat": 49.457, "lon": 18.142, "coord_precision": "site", "product_types": ["power", "analog", "discrete", "automotive MCU", "bipolar IC"], "wafer_size_mm": [150], "process_nodes": ["0.8um", "3um", "metal-gate CMOS", "MOSAIC", "PowerFET/IGBT", "bipolar IC", "150mm Si power (MOSFET/IGBT/diode)"], "finest_node": "0.8um (bipolar/CMOS, PowerFET/IGBT)", "status": "operational", "category": "volume_specialty", "confidence": "high", "expected_production_year": null, "notes": "onsemi's sole European front-end silicon device fab: 6-inch/150mm high-volume bipolar IC (0.8-3um), metal-gate CMOS, MOSAIC, PowerFET and IGBT. Serves automotive/computing/portables; >1bn power devices/yr. Address: 1. máje 1009.", "sources": ["https://www.onsemi.com/company/about-onsemi/locations/roznov-czech-republic", "https://www.onsemi.com/careers/who-we-are/careers-locations/czech-republic-careers", "https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-selects-the-czech-republic-to-establish-end-to-end-silicon-carbide-production-for-advanced-power-semiconductors", "https://ec.europa.eu/commission/presscorner/detail/en/ip_25_2757", "https://www.kariera-onsemi.cz/o-nas/", "https://www.irozhlas.cz/ekonomika/firma-onsemi-v-roznove-pod-radhostem-propusti-asi-170-lidi-investice-za-desitky_2503042233_ako"], "country_iso": "CZ", "status_group": "live", "finest_node_nm": 800.0, "max_wafer_mm": 150, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "MCU", "Power", "RF"], "site_id": "onsemi__roznov-pod-radhostem", "id": "onsemi-roznov-pod-radho-150mm", "year_opened": 2003, "year_first_production": null, "investment_eur_million": null, "employees": 1700, "region": "Zlín Region", "last_verified": "2026-06", "owner": {"parent": "onsemi Group (100% owner of Czech subsidiaries)", "ultimate_owner": "onsemi / ON Semiconductor Corporation", "owner_country_iso": "US", "ownership_type": "public", "note": "Nasdaq-listed U.S. public company (ticker: ON, headquarters Scottsdale AZ). Czech operations stem from 2003 acquisition of Tesla Sezam and Terosil entities. Current shareholding dispersed among institutional investors (Vanguard, BlackRock, State Street); no controlling shareholder disclosed as of 2025. Czech plant expansion announced June 2024 with €11B Czech state investment incentive approval.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "SEC Form 10-K (filed Feb 2024), onsemi investor relations, Wikipedia, BusinessWire"}, "summary": "onsemi's sole European front-end silicon fab; produces over a billion power devices yearly for automotive and computing, operating since 2003."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [18.142, 49.457]}, "properties": {"company": "onsemi", "fab_name": "Rožnov Silicon & SiC Crystal Growth, Wafer & Epitaxy Operations", "site_city": "Rožnov pod Radhoštěm", "country": "Czech Republic", "in_eu": true, "lat": 49.457, "lon": 18.142, "coord_precision": "site", "product_types": ["silicon crystal growth", "polished wafers", "epitaxial wafers", "SiC epi wafers", "SiC", "substrate", "epiwafer"], "wafer_size_mm": [150, 200], "process_nodes": ["Si crystal growth", "polished & EPI wafer manufacturing", "SiC crystal/boule growth", "SiC epitaxial layer growth", "SiC polished + epi wafers"], "finest_node": "n/a (substrate/epi: Si & SiC crystal/wafer/epitaxy on 150/200mm)", "status": "expanding", "category": "substrate_epi", "confidence": "high", "expected_production_year": null, "notes": "Raw silicon crystal growth, polished + EPI wafer factory (6-inch/150mm and 8-inch/200mm) plus SiC crystal/boule growth and SiC epitaxial wafers (150mm, new line ramping to 200mm). Site produces >3m wafers/yr. CZK 2.4bn Phase-1 SiC epi expansion (CZK 567m incentive pledged 2024).", "sources": ["https://www.onsemi.com/company/about-onsemi/locations/roznov-czech-republic", "https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-selects-the-czech-republic-to-establish-end-to-end-silicon-carbide-production-for-advanced-power-semiconductors", "https://czechinvest.gov.cz/en/Homepage/News/March-2025/Minister-Vlcek-meets-with-management-of-onsemi-in-the-US", "https://www.trendforce.com/news/2025/12/01/news-onsemi-to-receive-e450m-government-grant-for-advanced-sic-power-device-fab-in-czech-republic/", "https://www.kariera-onsemi.cz/o-nas/", "https://www.onsemi.com/company/newsroom/news-and-insights/onsemi-expands-its-silicon-carbide-fab-in-the-czech-republic"], "country_iso": "CZ", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Photonics/Opto", "SiC", "Substrate/epi"], "site_id": "onsemi__roznov-pod-radhostem", "id": "onsemi-roznov-pod-radho-200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": 95.0, "employees": 1700, "region": "Zlín Region", "last_verified": "2026-06", "owner": {"parent": "onsemi Group (100% owner of Czech subsidiaries)", "ultimate_owner": "onsemi / ON Semiconductor Corporation", "owner_country_iso": "US", "ownership_type": "public", "note": "Nasdaq-listed U.S. public company (ticker: ON, headquarters Scottsdale AZ). Czech operations stem from 2003 acquisition of Tesla Sezam and Terosil entities. Current shareholding dispersed among institutional investors (Vanguard, BlackRock, State Street); no controlling shareholder disclosed as of 2025. Czech plant expansion announced June 2024 with €11B Czech state investment incentive approval.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "SEC Form 10-K (filed Feb 2024), onsemi investor relations, Wikipedia, BusinessWire"}, "summary": "Czech Republic's silicon and SiC crystal-growth and wafer factory ramping to supply power electronics manufacturing across Europe."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [18.142, 49.457]}, "properties": {"company": "onsemi", "fab_name": "Rožnov Vertically Integrated SiC Device Fab (new end-to-end SiC line)", "site_city": "Rožnov pod Radhoštěm", "country": "Czech Republic", "in_eu": true, "lat": 49.457, "lon": 18.142, "coord_precision": "site", "product_types": ["SiC", "power", "SiC MOSFET", "power devices"], "wafer_size_mm": [200], "process_nodes": ["SiC crystal growth", "SiC wafering", "SiC epitaxy", "SiC device fabrication"], "finest_node": "unknown (SiC power device process, node not disclosed)", "status": "under_construction", "category": "compound_semi", "confidence": "medium", "expected_production_year": "2027", "notes": "Brownfield end-to-end vertically integrated 200mm SiC device fab (crystal->wafer->epi->device), co-located with the silicon fab. Described as the EU's first fully integrated SiC line. EC says EUR 1.64bn investment (~USD 1.8-2.0bn), EUR 450m Czech state aid approved late-Nov 2025; commercial production expected 2027. 200mm SiC diameter inferred.", "sources": ["https://ec.europa.eu/commission/presscorner/detail/en/ip_25_2757", "https://investor.onsemi.com/news-releases/news-release-details/onsemi-selects-czech-republic-establish-end-end-silicon-carbide/", "https://www.eenewseurope.com/en/eu-approves-e450m-boost-for-onsemis-sic-power-chip-plant/", "https://czechsemiconductorcentre.cz/the-european-commission-has-approved-e450-million-for-the-expansion-of-onsemi-in-czechia/", "https://www.seznamzpravy.cz/clanek/ekonomika-firmy-evropska-komise-schvalila-stovky-milionu-eur-na-rozsireni-firmy-onsemi-v-cesku-292200", "https://www.irozhlas.cz/ekonomika/firma-onsemi-v-roznove-pod-radhostem-propusti-asi-170-lidi-investice-za-desitky_2503042233_ako"], "country_iso": "CZ", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "onsemi__roznov-pod-radhostem", "id": "onsemi-roznov-pod-radho-200mm-sic-2", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 1640.0, "employees": 1700, "region": "Zlín Region", "last_verified": "2026-06", "owner": {"parent": "onsemi Group (100% owner of Czech subsidiaries)", "ultimate_owner": "onsemi / ON Semiconductor Corporation", "owner_country_iso": "US", "ownership_type": "public", "note": "Nasdaq-listed U.S. public company (ticker: ON, headquarters Scottsdale AZ). Czech operations stem from 2003 acquisition of Tesla Sezam and Terosil entities. Current shareholding dispersed among institutional investors (Vanguard, BlackRock, State Street); no controlling shareholder disclosed as of 2025. Czech plant expansion announced June 2024 with €11B Czech state investment incentive approval.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "SEC Form 10-K (filed Feb 2024), onsemi investor relations, Wikipedia, BusinessWire"}, "subsidy": {"amount_eur_million": 450, "authority": "European Commission (DG Competition) — Czech state aid notified by Czechia", "instrument": "National (Czech) investment-incentive grant approved via EC state-aid clearance; project also listed by EC as a first-of-a-kind semiconductor facility under the European Chips Act framework, but the €450M itself is a Czech state grant, not a direct EU Chips Act (central-budget) grant", "decision_date": "2025-11-21", "case_id": "SA.117291", "project_capex_eur_million": 1640, "source": "https://czechinvest.gov.cz/en/Homepage/News/November-1/European-Commission-approves-Czech-state-aid-for-semiconductor-manufacturer-onsemi", "note": "APPROVED (not merely pledged): EC cleared the Czech state-aid grant of ~€450M (CZK 12bn, per CzechInvest and IEU Monitoring reporting) on 21 Nov 2025 under case SA.117291 for onsemi's new integrated SiC power-device manufacturing plant in Rožnov pod Radhoštěm, against a Commission-assessed total project investment of €1.64bn — matching the input capex figure exactly. The official EC state-aid register PDF for SA.117291 was not yet published/reproduced in these secondary sources at time of writing (noted as pending confidentiality review), so the case number is drawn from consistent secondary EU-law/press reporting rather than a directly fetched EC PDF; no independent EC competition-website page could be verified in this session. No IPCEI ME/CT membership or direct EU Chips Act central grant is documented for this project — it is a national incentive cleared under standard EU state-aid rules, though the EC's own Chips Act digital-strategy page lists the Rožnov onsemi project among Chips Act-aligned facilities.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://ieu-monitoring.com/editorial/digitization/czechia-eu-commission-approves-e450m-in-state-aid-for-semiconductor-manufacturing/859487", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "EU's first fully vertically integrated SiC production line—from crystal growth through device manufacturing; EUR 1.64bn Czech-EU venture targeting 2027 EV power-electronics ramp."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [12.0667, 55.8333]}, "properties": {"company": "Topsil GlobalWafers", "fab_name": "Topsil GlobalWafers Frederikssund (float-zone / NTD / CZ silicon wafers; FZ300 300mm R&D)", "site_city": "Frederikssund", "country": "Denmark", "in_eu": true, "lat": 55.8333, "lon": 12.0667, "coord_precision": "city", "product_types": ["power", "RF", "detectors/sensors", "high-resistivity silicon", "silicon substrates", "float-zone (FZ) silicon wafers", "ultrapure high-resistivity silicon for power electronics"], "wafer_size_mm": [50, 100, 125, 150, 200], "process_nodes": ["Float-Zone (FZ) silicon", "NTD-FZ neutron transmutation doped", "Czochralski (CZ)", "high-resistivity Si", "power-grade Si", "200mm float-zone (FZ) silicon", "high-resistivity FZ silicon for high-voltage power devices", "150mm FZ (legacy)"], "finest_node": "200mm FZ / NTD-FZ ultra-pure high-resistivity & power-grade silicon (substrate, no CMOS node); 300mm FZ in R&D (FZ300 project)", "expected_production_year": "2027", "status": "expanding", "category": "substrate_epi", "confidence": "high", "notes": "Specialty float-zone Si substrate maker; GlobalWafers-owned since 2016. Jan 2024 expansion (~DKK 700M, ~125 jobs) growing 200mm FZ capacity; separate FZ300 R&D program targets world's first ultra-pure 300mm FZ wafers (development, not production).", "sources": ["https://www.topsil.com/en/about-us/", "https://www.datacenterdynamics.com/en/news/topsil-globalwafers-to-expand-silicon-wafer-production-in-denmark/", "https://investindk.com/cases/world-leading-semiconductor-manufacturer-is-expanding-with-125-jobs-in-frederikssund", "https://www.gw-semi.com/overview-locations/", "https://www.topsil.com/en/history/", "https://1stmile.dk/our-successful-project-applications/topsil-globalwafers-a-s/"], "country_iso": "DK", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Power", "RF", "Sensors", "Substrate/epi"], "site_id": "topsil-globalwafers__frederikssund", "id": "topsil-globalwafers-frederikssund-200mm", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 94.0, "employees": null, "region": "Capital Region of Denmark", "last_verified": "2026-06", "owner": {"parent": "GlobalWafers Co., Ltd. (Taiwan); immediate legal parent: GlobalWafers B.V. (Netherlands)", "ultimate_owner": "Sino-American Silicon Products Inc. (SAS)", "owner_country_iso": "TW", "ownership_type": "private", "note": "Wholly owned subsidiary (100%) of GlobalWafers/SAS group; acquired July 2016; 2023 Danish annual report explicitly confirms GlobalWafers B.V. as controlling shareholder with majority share capital, and SAS as ultimate parent/largest group consolidation entity. No public ownership changes reported post-2024.", "source": "https://regnskaber.cvrapi.dk/22224873/amNsb3VkczovLzAzLzYyLzE3LzFmL2M0LzY1NGYtNDk3Zi1hMzc2LWE1MGFkYzU2NTU2OA.pdf", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.topsil.com/wp-content/uploads/2025/05/2024-GHG-Inventory-Report.pdf"}, "summary": "Specialty substrate maker expanding pure-silicon capacity; develops world's first ultra-pure 300mm float-zone wafers for power electronics."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [24.8462, 60.2731]}, "properties": {"company": "Murata", "fab_name": "Vantaa MEMS Fab (ex-VTI Technologies)", "site_city": "Vantaa", "country": "Finland", "in_eu": true, "lat": 60.2731, "lon": 24.8462, "coord_precision": "site", "product_types": ["MEMS", "accelerometers", "gyroscopes", "inclinometers", "combined inertial sensors", "automotive safety sensors", "medical sensors"], "wafer_size_mm": [150], "process_nodes": ["proprietary silicon capacitive 3D MEMS", "3D MEMS bulk micromachining"], "finest_node": "proprietary 3D MEMS (silicon capacitive); lithographic feature size not publicly disclosed", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Former VTI Technologies (roots in Vaisala semicon 1979), acquired by Murata 2012; Murata's only MEMS sensor fab outside Japan. New ~16,000 m2 building inaugurated Jan 2020; ~1,000 staff. Myllynkivenkuja 6, Vantaa. 150mm reported but not vendor-confirmed.", "sources": ["https://en.wikipedia.org/wiki/Murata_Electronics_(Finland)", "https://corporate.murata.com/en-eu/newsroom/news/company/general/2020/0129", "https://www.cleanroomtechnology.com/murata-builds-new-mems-sensor-fab-in-finland-146431", "https://www.eenewseurope.com/en/murata-expands-finland-mems-campus/", "https://corporate.murata.com/en-us/company/muratalocations/affiliated_europe/murataelectronics-oy", "https://www.assemblymag.com/articles/95445-japanese-electronic-sensor-manufacturer-opens-finnish-facility"], "country_iso": "FI", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Automotive", "MEMS", "Sensors"], "site_id": "murata__vantaa", "id": "murata-vantaa-150mm", "year_opened": 2020, "year_first_production": null, "investment_eur_million": 42.0, "employees": 1000, "region": "Uusimaa", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Murata Manufacturing Co. (TSE: 6981)", "owner_country_iso": "JP", "ownership_type": "public", "note": "Murata Manufacturing Co., Ltd. is a Japan-incorporated public company listed on Tokyo Stock Exchange (Prime Market, ticker 6981) and Singapore Exchange (SGX M20). Headquarters in Nagaokakyo, Kyoto Prefecture, Japan. No single ultimate controlling owner; institutional and retail investors broadly distributed. — Ownership detail: Dispersed institutional and public shareholders; no controlling shareholder (Master Trust Bank of Japan LTD. 17.2%, Custody Bank of Japan 6.7% as of M", "source": "https://corporate.murata.com/en-us/ir/info/basic", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://en.wikipedia.org/wiki/Murata_Manufacturing"}, "summary": "Murata's sole MEMS fab outside Japan, rooted in Vaisala's 1979 semiconductor spinoff and serving automotive safety and medical sensors from a recently expanded cleanroom facility."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [25.0203, 60.2882]}, "properties": {"company": "Okmetic", "fab_name": "Vantaa Fab (existing 150/200mm line)", "site_city": "Vantaa", "country": "Finland", "in_eu": true, "lat": 60.2882, "lon": 25.0203, "coord_precision": "site", "product_types": ["specialty silicon", "SOI", "cavity SOI", "MEMS", "sensors", "RF", "power", "analog", "discrete"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm Cz polished/epi silicon (SSP/DSP)", "200mm Cz polished/epi silicon (SSP/DSP)", "150mm bonded SOI / cavity (C-SOI)", "200mm bonded SOI / cavity (C-SOI)", "Float-Zone high-resistivity wafers", "high-resistivity RFSi wafers", "patterned / TSV wafers"], "finest_node": "200mm bonded/cavity (C-SOI) specialty wafers (substrate, not a CMOS node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "HQ and main fab at Piitie 2, Koivuhaka district, Vantaa; majority of Okmetic wafers made here. Integrated crystal growing and wafering. Specialty substrate maker (polished/SOI/cavity-SOI for MEMS, RF, sensor, power, analog/discrete). Owned by China's NSIG (acquired 2016). 300mm/epi via contract manufacturing in Japan/China, not in-house.", "sources": ["https://www.okmetic.com/silicon-wafers/", "https://www.okmetic.com/silicon-wafers/mems-wafer-line/", "https://www.okmetic.com/silicon-wafers/production-and-capacity-expansion/", "https://en.wikipedia.org/wiki/Okmetic", "https://www.okmetic.com/about-okmetic/contact-us/", "https://www.okmetic.com/about-okmetic/investments-support-future-growth/"], "country_iso": "FI", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Discrete", "MEMS", "Power", "RF", "Sensors", "Substrate/epi"], "site_id": "okmetic__vantaa", "id": "okmetic-vantaa-200mm-soi", "year_opened": 1985, "year_first_production": null, "investment_eur_million": null, "employees": 600, "region": "Uusimaa", "last_verified": "2026-06", "owner": {"parent": "NSIG Finland S.à r.l. (Luxembourg, direct owner); Shanghai Si-Euro Investment Co., Ltd. (intermediate holding, China)", "ultimate_owner": "National Silicon Industry Group Co., Ltd. (NSIG)", "owner_country_iso": "CN", "ownership_type": "public", "note": "NSIG (listed on Shanghai Stock Exchange STAR Market) acquired Okmetic in 2016 via NSIG Finland S.à r.l.; delisted from Nasdaq Helsinki; ownership chain confirmed in corporate filings with NSIG Finland holding 93%+ of shares; 2023 news confirms ongoing investment in new Finnish fab", "source": "https://www.okmetic.com/about-us/news-articles/okmetics-parent-company-nsig-listed-on-the-sse-star-market/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Nordic specialist in engineered SOI and cavity-SOI substrates for RF, sensors and power; remains independent through Chinese ownership, integrated from crystal boule to finished wafer."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [25.021, 60.2885]}, "properties": {"company": "Okmetic", "fab_name": "Vantaa Fab Expansion (new 200mm fab, Koivuhaka)", "site_city": "Vantaa", "country": "Finland", "in_eu": true, "lat": 60.2885, "lon": 25.021, "coord_precision": "site", "product_types": ["specialty silicon", "SOI", "cavity SOI", "MEMS", "sensors", "RF", "power"], "wafer_size_mm": [200], "process_nodes": ["200mm crystal growth and wafering", "200mm single-side polished (SSP) Cz silicon", "200mm double-side polished (DSP) Cz silicon", "200mm bonded SOI / cavity (C-SOI)", "high-resistivity RFSi wafers"], "finest_node": "200mm polished/SOI specialty wafers (substrate, not a CMOS node)", "status": "operational", "expected_production_year": "2026", "category": "substrate_epi", "confidence": "high", "notes": "~EUR 400M new fab next to the existing Vantaa site (largest investment in company history, announced 2022). >40,000 m2 building incl. ~6,000 m2 cleanroom plus on-site crystal growth/wafering. Construction from early 2023; first wafers June 2025; volume production from early 2026. Roughly doubles 200mm capacity; targets >2x total capacity by 2030.", "sources": ["https://www.okmetic.com/about-us/news-articles/okmetic-vantaa-fab-expansion-enters-volume-production/", "https://www.okmetic.com/about-us/news-articles/first-silicon-wafers-out-from-okmetic-new-vantaa-fab-expansion/", "https://silicon-saxony.de/en/okmetic-vantaa-fab-extension-goes-into-series-production/", "https://www.powersemiconductorsweekly.com/2025/06/30/okmetic-produces-first-wafers-from-e400m-vantaa-fab-expansion-doubling-200mm-capacity-for-mems-rf-and-power-devices/", "https://siliconsemiconductor.net/article/122016/First_silicon_wafers_out_from_Okmetic", "https://evertiq.com/design/2026-02-11-okmetic-vantaa-fab-expansion-enters-volume-production"], "country_iso": "FI", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["MEMS", "Power", "RF", "Sensors", "Substrate/epi"], "site_id": "okmetic__vantaa", "id": "okmetic-vantaa-200mm-soi-2", "year_opened": null, "year_first_production": 2026, "investment_eur_million": 400.0, "employees": 600, "region": "Uusimaa", "last_verified": "2026-06", "owner": {"parent": "NSIG Finland S.à r.l. (Luxembourg, direct owner); Shanghai Si-Euro Investment Co., Ltd. (intermediate holding, China)", "ultimate_owner": "National Silicon Industry Group Co., Ltd. (NSIG)", "owner_country_iso": "CN", "ownership_type": "public", "note": "NSIG (listed on Shanghai Stock Exchange STAR Market) acquired Okmetic in 2016 via NSIG Finland S.à r.l.; delisted from Nasdaq Helsinki; ownership chain confirmed in corporate filings with NSIG Finland holding 93%+ of shares; 2023 news confirms ongoing investment in new Finnish fab", "source": "https://www.okmetic.com/about-us/news-articles/okmetics-parent-company-nsig-listed-on-the-sse-star-market/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Doubles substrate capacity with new 400M-EUR fab entering volume production 2026; targets 2.5x total capacity by 2030 for RF/MEMS/power-device wafer production."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [24.8312, 60.1886]}, "properties": {"company": "VTT / Micronova", "fab_name": "Micronova Centre for Micro and Nanotechnology (incl. Kvanttinova RDI hub expansion)", "site_city": "Espoo (Otaniemi)", "country": "Finland", "in_eu": true, "lat": 60.1886, "lon": 24.8312, "coord_precision": "site", "product_types": ["MEMS", "photonics", "sensors", "III-V optoelectronics", "superconducting/quantum devices", "microelectronics", "advanced packaging"], "wafer_size_mm": [100, 150, 200, 300], "process_nodes": ["150mm Si CMOS/BiCMOS", "MEMS", "III-V optoelectronics/photonics", "thin-film & 3D integration", "graphene/CMOS-integrated sensors (100-200mm)", "200mm pilot", "300mm pilot (aspirational)", "EU Chips Act pilot-line processes (FAMES, NanoIC)"], "finest_node": "unknown (More-than-Moore specialty/R&D; no CMOS logic node marketed)", "status": "expanding", "category": "rd_pilot", "expected_production_year": "2026", "confidence": "medium", "notes": "Largest micro/nanotech cleanroom in the Nordics; multi-user R&D/pilot (~2000-2600 m2). Property transferred Aalto->VTT 1 Jan 2024; co-run with Aalto (OtaNano). Existing line is 100-200mm (mainly 150mm); Kvanttinova RDI hub expansion (~EUR79M Finnish gov + EU/Chips JU) adds semiconductor/quantum pilot capacity with 300mm aspirational, first Finnish semiconductor processes targeted ~2026-27.", "sources": ["https://monitor-industrial-ecosystems.ec.europa.eu/technology-centre/vtt-micronova", "https://www.aalto.fi/en/otanano/about-micronova", "https://kvanttinova.fi", "https://siliconsemiconductor.net/article/120263/Significant_EU_funding_for_VTTand_s_semiconductor_development_", "https://en.wikipedia.org/wiki/VTT_Technical_Research_Centre_of_Finland", "https://evertiq.com/design/57298"], "country_iso": "FI", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Logic", "MEMS", "Photonics/Opto", "Sensors"], "site_id": "vtt-micronova__espoo-otaniemi", "id": "vtt-micronova-espoo-otaniemi-300mm", "year_opened": null, "year_first_production": 2026, "investment_eur_million": 79.0, "employees": null, "region": "Uusimaa", "last_verified": "2026-06", "owner": {"parent": "VTT Technical Research Centre of Finland Ltd (100% state-owned)", "ultimate_owner": "State of Finland", "owner_country_iso": "FI", "ownership_type": "state", "note": "Micronova facility owned by VTT; 100% state-owned limited liability company under ownership steering of Ministry of Economic Affairs and Employment; property transfer to VTT completed 2024-01-01; jointly operated national research infrastructure with Aalto University (operational role only, not ownership)", "source": "https://www.vttresearch.com/en/about-us/vtts-governance", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Nordics' largest micro/nanotech R&D hub; Kvanttinova expansion adds semiconductor and quantum-chip pilot capacity with ambitions toward 300mm by 2026-27."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.705, 45.195]}, "properties": {"company": "CEA-Leti", "fab_name": "CEA-Leti 200mm pilot line (CMOS + MEMS)", "site_city": "Grenoble", "country": "France", "in_eu": true, "lat": 45.195, "lon": 5.705, "coord_precision": "site", "product_types": ["logic", "MEMS", "sensors", "power", "analog", "FD-SOI CMOS R&D"], "wafer_size_mm": [200], "process_nodes": ["200mm CMOS R&D", "200mm FD-SOI/SOI", "200mm MEMS", "200mm power/More-than-Moore"], "finest_node": "advanced CMOS/MEMS R&D (no node label disclosed for 200mm lines)", "status": "operational", "category": "rd_pilot", "expected_production_year": null, "confidence": "high", "notes": "Long-standing 200mm R&D/pilot lines on CEA-Grenoble/MINATEC campus: dedicated 200mm MEMS line plus 200mm CMOS/mixed-signal and MEMS/CMOS co-integration. Pilot-scale, not volume.", "sources": ["https://www.leti-cea.com/cea-tech/leti/english/Pages/Applied-Research/Facilities/cleanrooms.aspx", "https://en.wikipedia.org/wiki/CEA-Leti:_Laboratoire_d'%C3%A9lectronique_des_technologies_de_l'information", "https://www.csis.org/analysis/french-model-cooperative-semiconductor-research-lessons-cea-leti", "https://www.cea.fr/english/Pages/News/FAMES-pilot-line-Europe.aspx"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Logic", "MEMS", "Power", "Sensors", "Substrate/epi"], "site_id": "cea-leti__grenoble", "id": "cea-leti-grenoble-200mm-soi", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "CEA (Commissariat à l'énergie atomique et aux énergies alternatives)", "ultimate_owner": "French State", "owner_country_iso": "FR", "ownership_type": "state", "note": "Research institute division within CEA Tech; operates as EPIC (établissement public à caractère industriel et commercial); not separately incorporated as commercial entity", "source": "https://www.cea.fr/english/Pages/Welcome.aspx", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "France's premier public research pilot line underpinning FD-SOI, MEMS and advanced CMOS innovation — cornerstone of European semiconductor research."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.705, 45.195]}, "properties": {"company": "CEA-Leti", "fab_name": "CEA-Leti 300mm silicon pilot platform (CMOS, photonics, 3D integration)", "site_city": "Grenoble", "country": "France", "in_eu": true, "lat": 45.195, "lon": 5.705, "coord_precision": "site", "product_types": ["logic", "FD-SOI", "advanced CMOS", "photonics", "3D integration", "sensors", "SiC R&D"], "wafer_size_mm": [300], "process_nodes": ["advanced CMOS / FD-SOI R&D (300mm)", "300mm silicon photonics", "300mm 3D integration", "nanosheet/TMD CMOS (research)"], "finest_node": "leading-edge FD-SOI / nanosheet R&D (no single commercial node; 193nm immersion litho on-site)", "status": "operational", "category": "rd_pilot", "expected_production_year": null, "confidence": "high", "notes": "Pre-FAMES 300mm R&D platforms on CEA-Grenoble campus: 300mm CMOS/FD-SOI line, dedicated Si-photonics platform, 300mm 3D-integration line; ASML 193nm immersion scanner on-site. Co-development with ST and Soitec (hosted Soitec SmartSiC pilot 2020-2021). Pilot-scale, not volume.", "sources": ["https://www.leti-cea.com/cea-tech/leti/english/Pages/Applied-Research/Facilities/cleanrooms.aspx", "https://www.leti-cea.com/cea-tech/leti/english/Pages/What's-On/News/a-new-era-for-european-semiconductors-begins-in-grenoble.aspx", "https://www.eetimes.com/soitecs-smartsic-to-hit-the-road-in-2024/", "https://en.wikipedia.org/wiki/CEA-Leti:_Laboratoire_d'%C3%A9lectronique_des_technologies_de_l'information", "https://www.cea.fr/english/Pages/News/FAMES-pilot-line-Europe.aspx"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 193.0, "max_wafer_mm": 300, "tags": ["Logic", "Photonics/Opto", "Sensors", "SiC", "Substrate/epi"], "site_id": "cea-leti__grenoble", "id": "cea-leti-grenoble-300mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "CEA (Commissariat à l'énergie atomique et aux énergies alternatives)", "ultimate_owner": "French State", "owner_country_iso": "FR", "ownership_type": "state", "note": "Research institute division within CEA Tech; operates as EPIC (établissement public à caractère industriel et commercial); not separately incorporated as commercial entity", "source": "https://www.cea.fr/english/Pages/Welcome.aspx", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "France's leading 300mm R&D hub for advanced CMOS, photonics, and 3D integration; co-developed with ST and Soitec to pilot hybrid and chiplet architectures."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.705, 45.195]}, "properties": {"company": "CEA-Leti", "fab_name": "FAMES Pilot Line (300mm, building 41.03)", "site_city": "Grenoble", "country": "France", "in_eu": true, "lat": 45.195, "lon": 5.705, "coord_precision": "site", "product_types": ["logic", "FD-SOI", "RF", "embedded non-volatile memory", "3D integration", "power management IC"], "wafer_size_mm": [300], "process_nodes": ["FD-SOI 10nm", "FD-SOI 7nm", "300mm RF", "300mm embedded NVM (OxRAM/FeRAM/MRAM/FeFET)", "300mm 3D heterogeneous & sequential integration", "power-management IC"], "finest_node": "7nm FD-SOI", "status": "operational", "category": "rd_pilot", "expected_production_year": null, "confidence": "high", "notes": "New ~2,000 m2 300mm cleanroom (~80 tools, building 41.03) on CEA-Grenoble campus, raising total to ~14,000 m2. Grenoble host of distributed EUR830m EU Chips Act FAMES pilot line (other sites: Tyndall Cork, VTT Espoo, SAL Villach). First Chips Act pilot line to reach full operation; inaugurated 30 Jan 2026.", "sources": ["https://digital-strategy.ec.europa.eu/en/news/fames-pilot-line-inaugurated-advance-ultra-low-power-semiconductors-europe", "https://www.eetimes.com/cea-leti-discloses-details-of-e830m-pilot-line-for-europe/", "https://www.tyndall.ie/news/fames-becomes-first-eu-chips-act-pilot-line-to-reach-full-operation/", "https://www.leti-cea.com/cea-tech/leti/english/Pages/What's-On/News/a-new-era-for-european-semiconductors-begins-in-grenoble.aspx", "https://www.cea.fr/english/Pages/News/FAMES-pilot-line-Europe.aspx"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 7.0, "max_wafer_mm": 300, "tags": ["Logic", "Memory/NVM", "Power", "RF", "Substrate/epi"], "site_id": "cea-leti__grenoble", "id": "cea-leti-grenoble-300mm-soi", "year_opened": 2026, "year_first_production": null, "investment_eur_million": 830.0, "employees": null, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "CEA (Commissariat à l'énergie atomique et aux énergies alternatives)", "ultimate_owner": "French State", "owner_country_iso": "FR", "ownership_type": "state", "note": "Research institute division within CEA Tech; operates as EPIC (établissement public à caractère industriel et commercial); not separately incorporated as commercial entity", "source": "https://www.cea.fr/english/Pages/Welcome.aspx", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 415, "authority": "Chips Joint Undertaking / European Commission (Chips for Europe Initiative)", "instrument": "EU Chips Act direct grant (Chips Joint Undertaking, via Digital Europe Programme + Horizon Europe) — FAMES pilot line, matched by equal Member State co-funding", "decision_date": "Grant approved 2023 (FAMES project runs Dec 2023–Dec 2028); pilot line inaugurated April 2025, reached full operation 2026", "case_id": "", "project_capex_eur_million": 830, "source": "https://digital-strategy.ec.europa.eu/en/factpages/digital-success-stories-fames-pilot-line", "note": "Chips JU pilot line (FAMES), 2023-2029; inaugurated 30 Jan 2026", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://digital-strategy.ec.europa.eu/en/news/fames-pilot-line-inaugurated-advance-ultra-low-power-semiconductors-europe", "channel": "eu_direct", "channel_label": "EU direct (Chips JU)"}, "summary": "First EU Chips Act pilot line to reach full operation; serves as the Grenoble hub for coordinated SOI and advanced logic R&D across four European sites."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [2.4828, 48.6139]}, "properties": {"company": "LIGENTEC", "fab_name": "LIGENTEC France R&D Centre", "site_city": "Corbeil-Essonnes", "country": "France", "in_eu": true, "lat": 48.6139, "lon": 2.4828, "coord_precision": "city", "product_types": ["photonics", "silicon nitride PIC", "SiN photonic integrated circuits"], "wafer_size_mm": [200], "process_nodes": ["low-loss SiN PIC platform (R&D wafer processing)"], "finest_node": "low-loss SiN PIC platform (R&D; volume via X-FAB 200mm)", "status": "rd_pilot", "category": "rd_pilot", "expected_production_year": null, "confidence": "low", "notes": "LIGENTEC France SAS R&D centre near Paris with wafer-processing/characterization equipment; base for EU photonics pilot-line work (photonixFAB). Not a volume fab; volume manufacturing is fabless via X-FAB 200mm.", "sources": ["https://www.ligentec.com/about-us-2/news/ligentec-opens-rd-centre-in-france-press-release/", "https://www.ligentec.com/about-us-2/", "https://www.ligentec.com/about-us-2/news/key-partner-in-european-industrial-silicon-photonics-pilot-line-initiative/", "https://www.electrooptics.com/news/ligentec-opens-pic-research-centre-france"], "country_iso": "FR", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Photonics/Opto"], "site_id": "ligentec__corbeil-essonnes", "id": "ligentec-corbeil-essonnes-200mm", "year_opened": 2022, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Ile-de-France", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Private; institutional investors, no controlling holder", "owner_country_iso": "CH", "ownership_type": "private", "note": "Private company spin-off from EPFL (École Polytechnique Fédérale de Lausanne) in 2016. Dispersed institutional investor base with founder Michael Geiselmann; no controlling parent publicly disclosed. — Ownership detail: Multiple institutional investors (EIC Fund, Venture Kick, EPFL, Fondation pour l'Innovation Technologique, ESA BIC Switzerland) with no single controlling shareholder disclosed", "source": "https://www.ligentec.com/about-us-2/", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://pitchbook.com/profiles/company/186024-25"}, "summary": "Part of photonixFAB's EU pilot-line consortium, this R&D centre near Paris develops silicon-nitride photonic circuits for research but manufactures volume via X-FAB's Germany foundry."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [2.4869, 48.7461]}, "properties": {"company": "MACOM / OMMIC", "fab_name": "MACOM European Semiconductor Center (former OMMIC III-V foundry)", "site_city": "Limeil-Brevannes", "country": "France", "in_eu": true, "lat": 48.7461, "lon": 2.4869, "coord_precision": "site", "product_types": ["RF/GaAs", "GaN", "MMIC", "RF/microwave", "mmWave", "power amplifiers", "LNA", "space", "defense"], "wafer_size_mm": [76, 100, 150], "process_nodes": ["GaAs pHEMT (ED02AH)", "GaAs pHEMT 130nm (D01PH)", "GaAs mHEMT 130nm (D01MH)", "GaAs mHEMT 70nm (D007IH, space-qualified)", "GaAs mHEMT 40nm (D004IH)", "GaAs/InP mHEMT 70nm (D007IH)", "GaN-on-Si HEMT 100nm (D01GH)", "GaN-on-Si HEMT 60nm (D006GH)"], "finest_node": "40nm GaAs mHEMT (D004IH); 60nm GaN-on-Si HEMT (D006GH); 70nm D007IH most advanced fully-qualified production process", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Sole MACOM/OMMIC European front-end fab: III-V GaAs/GaN-on-Si MMIC foundry near Paris (Val-de-Marne), ex-OMMIC SAS / former Philips Microwave Limeil. MACOM acquired assets/operations/real estate for ~EUR 38.5M, signed Feb 2023, closed June 2023; ~100 staff. MOCVD epi + wafer processing. 3-inch/76mm line in production; 6-inch/150mm GaAs/GaN line installed but not yet utilized at acquisition. Several ESA/space-qualified processes; Feb 2025 Bpifrance R&D/MMIC contract.", "sources": ["https://www.macom.com/european-semiconductor-center", "https://www.macom.com/european-semiconductor-center/mesc-processes", "https://www.semiconductor-today.com/news_items/2023/jun/macom-010623.shtml", "https://compoundsemiconductor.net/article/116845/Macom_establishes_European_semiconductor_centre", "https://www.macom.com/files/live/sites/macom/files/Foundry/D007IH-GaAs%20mHEMT.pdf", "https://www.microwavejournal.com/articles/39576-macom-signs-agreement-to-acquire-assets-and-operations-of-ommic-sas"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 40.0, "max_wafer_mm": 150, "tags": ["Foundry-services", "GaN", "Photonics/Opto", "Power", "RF", "Substrate/epi"], "site_id": "macom-ommic__limeil-brevannes", "id": "macom-ommic-limeil-brevannes-150mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": 38.5, "employees": 100, "region": "Ile-de-France (Val-de-Marne)", "last_verified": "2026-06", "owner": {"parent": "MACOM Technology Solutions Holdings, Inc. (operates the site as \"MACOM European Semiconductor Center\"; no separate French holding entity publicly disclosed between MTSI and the fab)", "ultimate_owner": "MACOM (NASDAQ: MTSI), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "Not a share/equity acquisition: in Feb 2023 MACOM signed a definitive agreement to buy the \"assets and operations\" (manufacturing facilities, MOCVD/wafer fab, IC/MMIC design, sub-100nm GaAs/GaN processes, ESA-qualified product lines) of OMMIC SAS for EUR 38.5M; deal closed by June 2023. This asset-only structure (rather than a corporate/share purchase) is consistent with a distressed/insolvency-linked carve-out, but I could not find a citable French court record (Tribunal de ", "source": "https://www.macom.com/updates/news/2023/macom-announces-definitive-agreement-to-acquire-assets-and-opera", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.semiconductor-today.com/news_items/2023/jun/macom-010623.shtml"}, "summary": "Europe's only MACOM III-V foundry, rooted in a former Philips microwave site, producing space-qualified RF/power MMIC and expanding 6-inch GaN capacity for defense and satellite markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-0.3262, 49.2089]}, "properties": {"company": "Murata", "fab_name": "Caen Silicon Capacitor / IPD Fab (Murata Integrated Passive Solutions, ex-IPDiA)", "site_city": "Caen", "country": "France", "in_eu": true, "lat": 49.2089, "lon": -0.3262, "coord_precision": "site", "product_types": ["silicon capacitors", "integrated passive devices", "PICS", "silicon submounts", "RF passives", "passive component arrays"], "wafer_size_mm": [200], "process_nodes": ["PICS (Passive Integrated Connecting Substrate) 3D silicon trench-capacitor process"], "finest_node": "PICS silicon-passive / 3D trench-capacitor IPD process (no CMOS-style nm node)", "status": "expanding", "expected_production_year": "2024", "category": "volume_specialty", "confidence": "high", "notes": "Former IPDiA (originated as Philips/NXP), acquired by Murata Oct 2016, renamed Murata Integrated Passive Solutions Apr 2017. Front-end Si wafer fab (~21,000 m2 / 5,000 m2 cleanroom). New 200mm PICS mass-production line (~EUR 60M) opened Oct 2024. 2 rue de la Girafe, 14000 Caen.", "sources": ["https://corporate.murata.com/en-eu/newsroom/news/company/general/2024/1011", "https://www.electronicsweekly.com/news/business/manufacturing/murata-opens-200mm-silicon-capacitor-line-in-caen-2024-10/", "https://passive-components.eu/murata-to-acquire-ipdia-a-leader-in-high-performance-silicon-capacitors/", "https://corporate.murata.com/en-us/company/muratalocations/affiliated_europe/murata-integrated-passive-solutions", "https://www.eenewseurope.com/en/murata-opens-silicon-capacitor-line-in-france/", "https://passive-components.eu/murata-expands-silicon-capacitor-production-line-in-france/"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Photonics/Opto", "Power", "RF", "Substrate/epi"], "site_id": "murata__caen", "id": "murata-caen-200mm", "year_opened": 2024, "year_first_production": null, "investment_eur_million": 60.0, "employees": 250, "region": "Normandy", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Murata Manufacturing Co. (TSE: 6981)", "owner_country_iso": "JP", "ownership_type": "public", "note": "Murata Manufacturing Co., Ltd. is a Japan-incorporated public company listed on Tokyo Stock Exchange (Prime Market, ticker 6981) and Singapore Exchange (SGX M20). Headquarters in Nagaokakyo, Kyoto Prefecture, Japan. No single ultimate controlling owner; institutional and retail investors broadly distributed. — Ownership detail: Dispersed institutional and public shareholders; no controlling shareholder (Master Trust Bank of Japan LTD. 17.2%, Custody Bank of Japan 6.7% as of M", "source": "https://corporate.murata.com/en-us/ir/info/basic", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://en.wikipedia.org/wiki/Murata_Manufacturing"}, "summary": "Transforms legacy Philips passive-device site into Murata's only integrated-passive-device volume fab in Europe; opened mass production line for silicon capacitors Oct 2024."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8783, 45.2856]}, "properties": {"company": "STMicroelectronics", "fab_name": "Crolles 300mm", "site_city": "Crolles", "country": "France", "in_eu": true, "lat": 45.2856, "lon": 5.8783, "coord_precision": "site", "product_types": ["logic", "FD-SOI CMOS", "automotive MCU", "microcontroller", "analog", "mixed-signal", "RF/SOI", "image sensors", "silicon photonics"], "wafer_size_mm": [300], "process_nodes": ["28nm FD-SOI", "40nm", "55nm", "65nm", "90nm", "RF-SOI", "SiGe BiCMOS"], "finest_node": "28nm FD-SOI", "status": "expanding", "expected_production_year": null, "category": "volume_logic", "confidence": "high", "notes": "ST's flagship 300mm advanced-logic/FD-SOI megafab and main R&D hub near Grenoble; inaugurated 2003. Scaling to 14k wpw by 2027 (modular to 20k); ST-only expansion (shelved GF JV). 18nm is a roadmap target only.", "sources": ["https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.globenewswire.com/news-release/2012/12/11/1585708/0/en/STMicroelectronics-Announces-its-28nm-FD-SOI-Technology-is-Ready-for-Manufacturing-in-its-Leading-Edge-Crolles-Fab.html", "https://www.photonics.com/Articles/STMicroelectronics-Reshapes-Manufacturing-Strategy/a70920", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities/crolles-st-site.html"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 28.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Logic", "MCU", "Photonics/Opto", "RF", "Sensors", "Substrate/epi"], "site_id": "stmicroelectronics__crolles", "id": "stmicroelectronics-crolles-300mm-soi", "year_opened": 2003, "year_first_production": null, "investment_eur_million": null, "employees": 4300, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "ST's flagship 300mm FD-SOI fab near Grenoble; pioneered 28nm FD-SOI for automotive and RF, scaling to 14,000 wafers per week by 2027."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8783, 45.2856]}, "properties": {"company": "STMicroelectronics", "fab_name": "Crolles 200mm", "site_city": "Crolles", "country": "France", "in_eu": true, "lat": 45.2856, "lon": 5.8783, "coord_precision": "site", "product_types": ["logic", "analog", "RF", "SiGe BiCMOS", "silicon photonics", "optical sensing", "image sensors"], "wafer_size_mm": [200], "process_nodes": ["130nm-class", "SiGe BiCMOS", "silicon photonics"], "finest_node": "130nm-class (legacy CMOS / photonics)", "status": "operational", "expected_production_year": null, "category": "volume_logic", "confidence": "medium", "notes": "Existing co-located 200mm fab on the Crolles campus; per 2024 plan being converted toward Electrical Wafer Sorting, advanced packaging and silicon photonics / optical sensing. Node detail not disclosed.", "sources": ["https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities/crolles-st-site.html"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 130.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Logic", "Photonics/Opto", "RF", "Sensors"], "site_id": "stmicroelectronics__crolles", "id": "stmicroelectronics-crolles-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 4300, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "Legacy 130nm logic fab converted toward silicon photonics and advanced packaging, preserving optical sensing capability in the Alps."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.6203, 43.4847]}, "properties": {"company": "STMicroelectronics", "fab_name": "Rousset 200mm", "site_city": "Rousset", "country": "France", "in_eu": true, "lat": 43.4847, "lon": 5.6203, "coord_precision": "city", "product_types": ["microcontroller", "STM32 MCU", "secure ICs", "smartcard ICs", "EEPROM", "NVM", "analog", "mixed-signal", "automotive"], "wafer_size_mm": [200], "process_nodes": ["90nm", "110nm", "130nm-class embedded flash", "mature CMOS / embedded NVM"], "finest_node": "90nm-class (embedded NVM, approximate)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Fully integrated 200mm fab near Aix-en-Provence (opened 2000); general-purpose MCUs (STM32), secure/smartcard ICs and EEPROM. ST holding the course on 200mm here and reallocating volumes to saturate capacity. Exact nodes not published.", "sources": ["https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://www.photonics.com/Articles/STMicroelectronics-Reshapes-Manufacturing-Strategy/a70920", "https://ultimatepopculture.fandom.com/wiki/STMicroelectronics", "https://www.intellion.com/en/fab-automation-bei-stmicroelectronics/"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 90.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "MCU", "Memory/NVM", "Smartcard/Secure"], "site_id": "stmicroelectronics__rousset", "id": "stmicroelectronics-rousset-200mm", "year_opened": 2000, "year_first_production": null, "investment_eur_million": null, "employees": 2700, "region": "Provence-Alpes-Cote d'Azur", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "ST's enduring 200mm hub for MCUs and secure microcontrollers; anchor of ST's consumer and embedded-security strategy since 2000."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [0.6848, 47.3941]}, "properties": {"company": "STMicroelectronics", "fab_name": "Tours 200mm", "site_city": "Tours", "country": "France", "in_eu": true, "lat": 47.3941, "lon": 0.6848, "coord_precision": "city", "product_types": ["power", "advanced diodes", "rectifiers", "integrated passive devices", "GaN", "RF", "analog", "protection devices"], "wafer_size_mm": [200], "process_nodes": ["advanced diode/rectifier", "integrated passive devices (IPD)", "mature analog/power processes", "GaN-on-Si epitaxy"], "finest_node": "200mm power/diode/IPD (no CMOS node); GaN epitaxy center of competence", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "medium", "notes": "200mm silicon front-end line for advanced diodes, integrated passive devices and protection; European GaN center of competence (mainly epitaxy). Legacy 150mm transferring out. A separate panel-level-packaging back-end pilot line (~Q3 2026) is excluded as back-end.", "sources": ["https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://semiengineering.com/annual-global-ic-fabs-and-facilities-report/", "https://www.photonics.com/Articles/STMicroelectronics-Reshapes-Manufacturing-Strategy/a70920", "https://en.wikipedia.org/wiki/STMicroelectronics"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Discrete", "GaN", "Power", "RF", "Substrate/epi"], "site_id": "stmicroelectronics__tours", "id": "stmicroelectronics-tours-200mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Centre-Val de Loire", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "European GaN innovation hub and power-semiconductor front-end facility focused on diodes, protection devices, and RF components."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8817, 45.2858]}, "properties": {"company": "STMicroelectronics – GlobalFoundries JV", "fab_name": "Crolles 300mm ST-GlobalFoundries FD-SOI joint venture fab", "site_city": "Crolles", "country": "France", "in_eu": true, "lat": 45.2858, "lon": 5.8817, "coord_precision": "site", "product_types": ["logic", "FD-SOI", "FD-SOI CMOS", "automotive", "automotive MCU", "microcontroller", "industrial", "IoT", "RF", "analog", "mixed-signal", "power", "communications infrastructure"], "wafer_size_mm": [300], "process_nodes": ["28nm FD-SOI", "22nm FD-SOI (22FDX)", "18nm FD-SOI"], "finest_node": "18nm FD-SOI", "status": "announced", "expected_production_year": "2026 (original target lapsed; project paused)", "category": "foundry", "confidence": "high", "notes": "Jointly-operated 300mm FD-SOI fab adjacent to ST's existing Crolles campus (~58% GF / ~42% ST). MoU Jul 2022, definitive agreement Jun 2023; ~EUR 7.5bn with ~EUR 2.9bn French/EU Chips Act state aid; up to 620k wafers/yr at full build (GF 22FDX + ST roadmap to 18nm). Reported suspended/shelved/stalled across 2024-2025 with no construction progress in 18+ months; not formally cancelled, restart uncertain. EIB 'Liberty Semiconductor Fab'.", "sources": ["https://gf.com/news-and-events/news/globalfoundries-and-stmicroelectronics-finalize-agreement-for-new-300mm-semiconductor-manufacturing-facility-in-france/", "https://www.eetimes.com/stmicroelectronics-globalfoundries-to-build-300-mm-fab-in-crolles/", "https://www.eenewseurope.com/en/st-glofo-suspend-plan-for-joint-wafer-fab-say-reports/", "https://www.trendforce.com/news/2025/01/29/news-two-semiconductor-fab-projects-abruptly-halted/", "https://semiengineering.com/annual-global-ic-fabs-and-facilities-report/", "https://newsroom.st.com/media-center/press-item.html/c3102.html"], "country_iso": "FR", "status_group": "future", "finest_node_nm": 18.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Logic", "MCU", "Photonics/Opto", "Power", "RF", "Substrate/epi"], "site_id": "stmicroelectronics-globalfoundries-jv__crolles", "id": "stmicroelectronics-globa-crolles-300mm-soi", "year_opened": null, "year_first_production": 2026, "investment_eur_million": 7500.0, "employees": 1000, "region": "Auvergne-Rhône-Alpes", "last_verified": "2026-06", "owner": {"parent": "JV: STMicroelectronics ~42% / GlobalFoundries ~58% (capacity split at 620k wafers/yr full build-out)", "ultimate_owner": "STMicroelectronics + GlobalFoundries (GF -> Mubadala, Abu Dhabi)", "owner_country_iso": "MULTI", "ownership_type": "jv", "note": "Jointly operated Crolles 300mm FD-SOI facility; GF participation reportedly decelerated mid-2025", "source": "https://investors.gf.com/news-releases/news-release-details/stmicroelectronics-and-globalfoundries-advance-fd-soi-ecosystem", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 2900, "authority": "European Commission", "instrument": "EC state-aid approval (national direct grant scheme, France) — approved under EU Chips Act framework", "decision_date": "2023-04-27", "case_id": "SA.102430", "project_capex_eur_million": 7500, "source": "https://ec.europa.eu/commission/presscorner/detail/en/ip_23_2447", "note": "EC-approved French aid under Chips Act first-of-a-kind; GF participation reportedly decelerated mid-2025 — disbursement milestone-bound", "verified": "confirmed", "as_of": "2026-07-17", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "Jointly operated by ST Microelectronics and GlobalFoundries since 2023, this EUR 7.5bn 300mm FD-SOI fab aimed to address automotive and IoT logic production but has stalled without visible construction progress."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.851, 45.285]}, "properties": {"company": "Soitec", "fab_name": "Bernin 1 (200mm SOI/POI engineered substrate fab)", "site_city": "Bernin", "country": "France", "in_eu": true, "lat": 45.285, "lon": 5.851, "coord_precision": "site", "product_types": ["SOI substrates", "RF-SOI", "FD-SOI", "Power-SOI", "POI", "engineered substrates"], "wafer_size_mm": [200], "process_nodes": ["200mm Smart Cut SOI", "200mm SOI engineered substrate (Smart Cut)", "POI (piezoelectric-on-insulator)"], "finest_node": "200mm engineered substrates (Smart Cut SOI / POI) - substrate maker, no CMOS node", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "medium", "notes": "Soitec's earliest/200mm SOI fab at the Bernin campus near Grenoble; Smart Cut engineered SOI and POI substrates; frequent ST FD-SOI partner. Soitec does not publish per-fab wafer-size publicly.", "sources": ["https://www.soitec.com/home/technology/manufacturing/semiconductor-fabs", "https://en.wikipedia.org/wiki/Soitec", "https://www.eetimes.com/soitec-opens-300-mm-soi-wafer-fab-in-france/", "https://siliconsemiconductor.net/article/68601/Soitec_unveils_plans_for_new_plant_in_Singapore"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Logic", "Power", "RF", "Substrate/epi"], "site_id": "soitec__bernin", "id": "soitec-bernin-200mm-soi", "year_opened": 1999, "year_first_production": null, "investment_eur_million": null, "employees": 1000, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Dispersed public shareholders", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on Euronext Paris; largest holders include Bpifrance Participations SA (~11-11.5%), CEA Investissement SA (~7.2%), and various institutional investors; no controlling shareholder; claim of 60% ownership by Shanghai Pudong (SPTI) contradicts official AMF filings and is unsupported.", "source": "https://www.soitec.com/home/investors/shareholders---analysts--/shareholding-structure", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.investing.com/equities/soitec-ownership"}, "capacity": {"value": 1000000, "unit": "wafers_per_year_200mm", "provenance": "disclosed", "quote": "Bernin 1 capacity: 1.0 M wafers/year max capacity", "source": "https://www.soitec.com/home/technology/manufacturing/semiconductor-fabs", "year": 2024, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Birthplace of Soitec's Smart Cut SOI technology near Grenoble; remains the company's 200mm substrate hub for ST's FD-SOI and RF-SOI product lines."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8512, 45.2431]}, "properties": {"company": "Soitec", "fab_name": "Bernin 2 (300mm SOI fab)", "site_city": "Bernin", "country": "France", "in_eu": true, "lat": 45.2431, "lon": 5.8512, "coord_precision": "site", "product_types": ["SOI substrates", "RF-SOI", "FD-SOI", "POI", "photonic SOI", "engineered substrates"], "wafer_size_mm": [300], "process_nodes": ["300mm Smart Cut SOI", "RF-SOI", "FD-SOI", "300mm SOI engineered substrate (Smart Cut)"], "finest_node": "300mm engineered substrates (Smart Cut SOI / FD-SOI / RF-SOI) - substrate maker, no CMOS node", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Soitec's first 300mm SOI fab at Bernin, opened 2002-2003; FD-SOI/RF-SOI/photonic-SOI substrates under capacity expansion (~0.75M wafers/yr). Complements Soitec's Singapore (Pasir Ris) 300mm SOI fab (out of EU scope).", "sources": ["https://www.soitec.com/home/technology/manufacturing/semiconductor-fabs", "https://www.eetimes.com/soitec-opens-300-mm-soi-wafer-fab-in-france/", "https://en.wikipedia.org/wiki/Soitec", "https://www.allaboutcircuits.com/news/frances-drive-to-rebuild-a-native-semiconductor-industry/", "https://siliconsemiconductor.net/article/68601/Soitec_unveils_plans_for_new_plant_in_Singapore"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Logic", "Photonics/Opto", "RF", "Substrate/epi"], "site_id": "soitec__bernin", "id": "soitec-bernin-300mm-soi", "year_opened": 2003, "year_first_production": null, "investment_eur_million": 350.0, "employees": 1000, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Dispersed public shareholders", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on Euronext Paris; largest holders include Bpifrance Participations SA (~11-11.5%), CEA Investissement SA (~7.2%), and various institutional investors; no controlling shareholder; claim of 60% ownership by Shanghai Pudong (SPTI) contradicts official AMF filings and is unsupported.", "source": "https://www.soitec.com/home/investors/shareholders---analysts--/shareholding-structure", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.investing.com/equities/soitec-ownership"}, "subsidy": {"amount_eur_million": 200, "authority": "European Commission (DG Competition) — state aid approval of French national implementation measure", "instrument": "IPCEI ME (Microelectronics, first wave) — French national scheme 'Nano 2022', with Soitec named as beneficiary of a EUR 200 million subsidised loan", "decision_date": "2018-12-13 (per French DGE documentation citing the Commission decision; Commission public press release dated 2018-12-18)", "case_id": "SA.46705 (2018/N) — France — IPCEI Microelectronics [Commission decision C(2018) 8864 final]", "project_capex_eur_million": null, "source": "https://www.entreprises.gouv.fr/files/files/Publications/2024/themas/2024-themas-dge-n17-piiec-eng.pdf", "note": "Soitec's Bernin site is a named beneficiary under the first IPCEI Microelectronics (2018), implemented in France via the 'Nano 2022' national programme (EC case SA.46705, decision C(2018) 8864 final, France on IPCEI Microelectronics). French government documentation specifically identifies Soitec as receiving a EUR 200 million subsidised loan (part of Nano 2022's overall EUR 886m French public support: EUR 686m grants + EUR 200m loan to Soitec). This confirmed EUR 200m figure is not broken out by specific Bernin building or by 200mm vs 300mm capacity, so it cannot be tied precisely to the '300mm SOI fab' alone vs Soitec's Bernin site generally; project_capex_eur_million is left unreported since public sources do not disaggregate it from the input's fab-level capex figure. Soitec is separately reported (secondary/analytical source, France2030.ai, not an official EC figure) to also participate in the second-wave 'IPCEI ME/CT' (EC-approved June 2023, up to EUR 8.1bn across 14 member states) with an ESTIMATED additional EUR 200-300m in French public support for next-gen SOI substrates — this is UNCONFIRMED/not officially disclosed per-beneficiary and is excluded from the approved amount reported here. No dedicated EU Chips Act direct-grant decision naming Soitec/Bernin was found (the Chips Act is publicly tied to the separate STMicroelectronics-GlobalFoundries Crolles fab, case SA.102430).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://ec.europa.eu/competition/state_aid/cases1/201952/277354_2120329_283_2.pdf", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "capacity": {"value": 750000, "unit": "wafers_per_year_300mm", "provenance": "disclosed", "quote": "Bernin 2 (B2) – 300 mm SOI Capacity target: 0.75 M wafers/year by end of FY25", "source": "https://www.soitec.com/docs/default-source/financial-reports/2023-2024/en/2023-10-10-automotive-industrial.pdf", "year": 2024, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "World's largest SOI substrate producer and EUR 200M IPCEI beneficiary; Bernin targets 750K 300mm wafers/yr for RF-SOI, FD-SOI, and photonic-SOI applications."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.851, 45.285]}, "properties": {"company": "Soitec", "fab_name": "Bernin 3 (300mm SOI fab)", "site_city": "Bernin", "country": "France", "in_eu": true, "lat": 45.285, "lon": 5.851, "coord_precision": "site", "product_types": ["SOI substrates", "engineered substrates"], "wafer_size_mm": [300], "process_nodes": ["300mm SOI engineered substrate (Smart Cut)"], "finest_node": "300mm SOI engineered substrate (not a CMOS node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "low", "notes": "Additional SOI fab on the Bernin campus listed by Soitec; per-fab wafer size/product mix not disclosed in primary sources; part of the silicon Smart Cut substrate manufacturing.", "sources": ["https://www.soitec.com/home/technology/manufacturing/semiconductor-fabs", "https://en.wikipedia.org/wiki/Soitec"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Substrate/epi"], "site_id": "soitec__bernin", "id": "soitec-bernin-300mm-soi-2", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Dispersed public shareholders", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on Euronext Paris; largest holders include Bpifrance Participations SA (~11-11.5%), CEA Investissement SA (~7.2%), and various institutional investors; no controlling shareholder; claim of 60% ownership by Shanghai Pudong (SPTI) contradicts official AMF filings and is unsupported.", "source": "https://www.soitec.com/home/investors/shareholders---analysts--/shareholding-structure", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.investing.com/equities/soitec-ownership"}, "summary": "Part of Soitec's Bernin campus; produces engineered SOI substrates using proprietary Smart Cut process for advanced logic foundries."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8512, 45.2431]}, "properties": {"company": "Soitec", "fab_name": "Bernin 4 (SmartSiC SiC substrate plant)", "site_city": "Bernin", "country": "France", "in_eu": true, "lat": 45.2431, "lon": 5.8512, "coord_precision": "site", "product_types": ["SiC", "SmartSiC engineered SiC substrates", "power", "EV power", "automotive"], "wafer_size_mm": [150, 200], "process_nodes": ["SmartSiC engineered SiC-on-SiC substrates (Smart Cut / layer transfer)", "SmartSiC 150/200mm"], "finest_node": "150/200mm SmartSiC engineered SiC substrates for SiC MOSFET/diode power devices (EV) - substrate maker, no CMOS node", "status": "expanding", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Dedicated SmartSiC 150/200mm SiC-on-SiC substrate plant; construction from 2022, first wafers Nov 2023, 200mm ramp in 2024, targeting 500k wafers/yr by 2028; SmartSiC pilot ran at CEA-Leti 2020-2021; ST a key SiC qualification partner. Distinct SiC technology vs the SOI fabs.", "sources": ["https://www.soitec.com/home/technology/manufacturing/semiconductor-fabs", "https://www.eetimes.com/soitecs-smartsic-to-hit-the-road-in-2024/", "https://www.soitec.com/docs/default-source/financial-reports/2022-2023/en/03052022_soitec_200mm_smartsictm_en.pdf", "https://csmantech.org/wp-content/uploads/2024/06/6.1.3.2024-SmartSiC%E2%84%A2-150-200mm-engineered-substrate.pdf", "https://www.investingrenoblealpes.com/en/soitec-launched-the-construction-of-a-new-fabrication-facility-at-its-headquarters-in-bernin/", "https://en.wikipedia.org/wiki/Soitec"], "country_iso": "FR", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Automotive", "Power", "SiC", "Substrate/epi"], "site_id": "soitec__bernin", "id": "soitec-bernin-200mm-sic", "year_opened": 2024, "year_first_production": 2024, "investment_eur_million": 220.0, "employees": 400, "region": "Auvergne-Rhone-Alpes", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Dispersed public shareholders", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on Euronext Paris; largest holders include Bpifrance Participations SA (~11-11.5%), CEA Investissement SA (~7.2%), and various institutional investors; no controlling shareholder; claim of 60% ownership by Shanghai Pudong (SPTI) contradicts official AMF filings and is unsupported.", "source": "https://www.soitec.com/home/investors/shareholders---analysts--/shareholding-structure", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.investing.com/equities/soitec-ownership"}, "subsidy": {"amount_eur_million": null, "authority": "France (DGE / France 2030), validated by European Commission under IPCEI ME/CT", "instrument": "IPCEI ME/CT participation (France 2030 national aid contract, EC-validated) — no specific individual EC state-aid SA case number identified for this plant", "decision_date": "Underlying IPCEI ME/CT framework approved by EC 2023-06-08; Soitec's France 2030 financial-support contract for the 2022–2026 period, \"validated by the European Commission under IPCEI ME/TC 2026,\" was signed 2024-03-05", "case_id": "", "project_capex_eur_million": 400, "source": "https://www.globenewswire.com/news-release/2024/05/22/2886723/0/en/soitec-reports-fourth-quarter-revenue-and-full-year-results-of-fiscal-year-2024.html", "note": "France 2030 support agreement signed 26 Jan 2024; amount not publicly disclosed", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://presse.economie.gouv.fr/28092023-roland-lescure-inaugure-la-nouvelle-usine-de-materiaux-semi-conducteurs-innovants-de-soitec-a-bernin-38/", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "capacity": {"value": 500000, "unit": "wafers_per_year_sic", "provenance": "disclosed", "quote": "Bernin 4 (SmartSiC) SiC substrate plant 500 k wafers/year capacity", "source": "https://www.semi.org/sites/semi.org/files/2024-11/03%20Jerome%20Schwartzmann.pdf", "year": 2024, "verified": "unreachable", "as_of": "2026-07-17"}, "summary": "France's engineered SiC substrate pioneer scaling to 500,000 wafers yearly by 2028, powering electric vehicles and industrial power demand."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [2.4889, 48.5512]}, "properties": {"company": "X-FAB", "fab_name": "X-FAB France (Corbeil-Essonnes, former Altis Semiconductor)", "site_city": "Corbeil-Essonnes", "country": "France", "in_eu": true, "lat": 48.5512, "lon": 2.4889, "coord_precision": "city", "product_types": ["analog", "mixed-signal CMOS", "high-voltage CMOS", "automotive", "industrial", "SOI", "RF/RF-SOI", "BCD-on-SOI", "smart sensors", "photonics"], "wafer_size_mm": [200], "process_nodes": ["350nm", "250nm", "180nm", "130nm", "110nm", "RF-SOI", "BCD-on-SOI"], "finest_node": "110nm", "status": "operational", "category": "foundry", "confidence": "high", "expected_production_year": null, "notes": "Former Altis Semiconductor (ex-IBM/Infineon JV); acquired by X-FAB 2016. Largest, most advanced X-FAB European site; 200mm, 110nm in volume production; 180nm HV CMOS (XH018, automotive-qualified), RF-SOI/BCD-on-SOI. ~35km south of Paris (Le Coudray-Montceaux).", "sources": ["https://www.xfab.com/news/details/article/x-fab-set-to-receive-funding-from-the-european-ipcei-me-ct-for-semiconductor-technology-innovation", "https://www.xfabulous.com/our-locations/corbeil-france/", "https://www.xfab.com/news/details/article/x-fab-brings-180nm-automotive-qualified-semiconductor-process-to-its-french-manufacturing-site", "https://en.wikipedia.org/wiki/X-Fab", "https://www.xfab.com/manufacturing/our-fabs"], "country_iso": "FR", "status_group": "live", "finest_node_nm": 110.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Photonics/Opto", "RF", "Sensors", "Substrate/epi"], "site_id": "x-fab__corbeil-essonnes", "id": "x-fab-corbeil-essonnes-200mm-soi", "year_opened": 2016, "year_first_production": null, "investment_eur_million": null, "employees": 1150, "region": "Ile-de-France", "last_verified": "2026-06", "owner": {"parent": "X-FAB Silicon Foundries SE (Erfurt, Germany-headquartered operationally; group holding company legally domiciled in Tessenderlo-Ham, Belgium) — direct parent of the Corbeil-Essonnes, Dresden, Erfurt and Itzehoe fabs; publicly listed on Euronext Paris and Frankfurt (ticker XFAB)", "ultimate_owner": "Xtrion NV bloc + Sarawak state fund (no majority owner)", "owner_country_iso": "BE", "ownership_type": "public", "note": "Ownership shares as of X-FAB's 2026 AGM proxy statement / 2024 half-year report: Elex NV 25.0% (32,672,778 sh.), Sensinnovat BV 24.4-24.9% (~32.0-32.6m sh.), Sarawak Technology Holdings Sdn. Bhd. 11.4% (14,948,655 sh., Malaysian state of Sarawak), public free float ~38.7% (50,587,907 sh.); total 130,781,669 shares. In late 2023 the prior joint Xtrion NV holding (which historically also controlled Melexis NV) was split between the De Winter-Chombar family and the Duchâtelet fa", "source": "https://www.xfab.com/investors", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.xfab.com/fileadmin/X-FAB/Investor_Relations/Shareholders_Meeting/2026/Proxy_2026_ENG.pdf"}, "capacity": {"value": 26000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Capacity (CMOS/BiCMOS/SOI, excl. MEMS): 26,000 wafer starts per month", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "X-FAB company presentation 2019-2020"}, "summary": "X-FAB's largest European foundry and lineal descendant of IBM and Infineon's Paris analog heritage; now serving 180nm automotive and RF-SOI markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.2199, 49.1276]}, "properties": {"company": "AZUR SPACE Solar Power", "fab_name": "AZUR SPACE Heilbronn (Telefunken Technology Park)", "site_city": "Heilbronn", "country": "Germany", "in_eu": true, "lat": 49.1276, "lon": 9.2199, "coord_precision": "site", "product_types": ["III-V multi-junction solar cells", "space solar cells", "CPV solar cells", "GaAs", "germanium substrate", "Si bypass diodes"], "wafer_size_mm": [100, 150], "process_nodes": ["MOCVD III-V epitaxy on Ge/GaAs", "quadruple-junction GaInP/GaAs/Ge (deep-space)", "quintuple-junction (terrestrial CPV)"], "finest_node": "MOCVD multi-junction III-V epitaxy (quintuple-junction CPV / quadruple-junction space; not a CMOS node)", "status": "expanding", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Only European front-end site; integrated epitaxy+cell+assembly+test campus at Telefunken Technology Park, Heilbronn since 1964; >11,000 m2 incl. >4,000 m2 cleanroom, runs 24/7. Owned by 5N Plus. Capacity ramp +35% (2024), +30% (2025), +25% planned 2026. Wafer diameter not publicly disclosed; [100,150] mm inferred from Ge/GaAs industry norms.", "sources": ["https://www.azurspace.com/en/about-us/milestones-achievements/", "https://www.azurspace.com/media/uploads/file_links/file/bdb_00010890-01-00_generalinformationazur.pdf", "https://www.5nplus.com/en/news/5n-plus-inc-to-further-increase-space-solar-cell-p/", "https://www.semiconductor-today.com/news_items/2026/feb/5nplus-030226.shtml", "https://www.5nplus.com/en/news/5n-plus-to-acquire-azur-space/", "https://www.azurspace.com"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Power", "Solar", "Substrate/epi"], "site_id": "azur-space-solar-power__heilbronn", "id": "azur-space-solar-power-heilbronn-150mm-gaas", "year_opened": 1964, "year_first_production": null, "investment_eur_million": null, "employees": 350, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "5N Plus Inc. (TSX: VNP)", "ultimate_owner": "5N Plus Inc.", "owner_country_iso": "CA", "ownership_type": "public", "note": "100% owned subsidiary of Canadian public company (TSX: VNP) since 2021 acquisition completed November 2021", "source": "https://www.5nplus.com/en/news/5n-plus-completes-acquisition-of-azur-space/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 500000, "unit": "wafers_per_year_300mm_eq", "provenance": "disclosed", "quote": "we are the leading provider… with a capacity of 500 000 wafers/year", "source": "https://www.azurspace.com/index.php/en/products/14-english-contents/77-azur-news", "year": 2020, "verified": "unreachable", "as_of": "2026-07-17"}, "summary": "Europe's sole integrated multi-junction solar-cell factory on a 24/7 heritage campus; ramping capacity to meet surging space-launch demand."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.5892, 50.9271]}, "properties": {"company": "Coherent (ex-II-VI)", "fab_name": "Coherent Jena diode laser fab (ex-Jenoptik Diode Lab)", "site_city": "Jena", "country": "Germany", "in_eu": true, "lat": 50.9271, "lon": 11.5892, "coord_precision": "city", "product_types": ["high-power diode lasers", "edge-emitting laser diodes", "laser bars/stacks", "GaAs epitaxy", "optoelectronics"], "wafer_size_mm": [100], "process_nodes": ["GaAs epitaxy (MBE/MOCVD)", "ridge-waveguide / stripe high-power diode laser process", "edge-emitting laser bar fabrication"], "finest_node": "GaAs high-power diode laser (custom III-V process, no CMOS node; ~100mm GaAs)", "status": "operational", "category": "compound_semi", "confidence": "medium", "expected_production_year": null, "notes": "Coherent Jena GmbH, ex-Jenoptik Diode Lab acquired via II-VI; GaAs high-power edge-emitting diode lasers/bars. Front-end extent and wafer size not officially published; 100mm is legacy.", "sources": ["https://www.coherent.com/company/locations", "https://www.sec.gov/Archives/edgar/data/820318/000082031824000016/ex2101listofsubsidiaries06.htm", "https://en.wikipedia.org/wiki/Coherent_Corp.", "https://en.wikipedia.org/wiki/Coherent,_Inc.", "https://www.coherent.com"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 100, "tags": ["Photonics/Opto", "Power", "Substrate/epi"], "site_id": "coherent-ex-ii-vi__jena", "id": "coherent-ex-ii-vi-jena-100mm-gaas", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Thuringia", "last_verified": "2026-06", "owner": {"parent": "Coherent Corp (NYSE: COHR) — Coherent Corp is the direct legal parent for the European fab estate; European entities sit under intermediate holding companies (e.g., Coherent (UK) Holdings B Ltd. now holds II-VI Laser Enterprise GmbH, Zurich, replacing II-VI Holdings B.V. as of 24 Jun 2024 per Swiss commercial register — an internal restructuring, not a change of ultimate control)", "ultimate_owner": "Coherent Corp (NYSE: COHR), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "US public company; Bain Capital holds a preferred-equity stake from the 2022 Coherent acquisition financing (exact current % not publicly confirmed)", "source": "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/aerospace-defense/britain-buys-semiconductor-factory-secure-supply-military-2024-09-27/"}, "summary": "Coherent Jena inherits Jenoptik's high-power GaAs laser heritage, now producing edge-emitting diode bars for industrial and defence applications across Europe and beyond."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.7798, 51.1267]}, "properties": {"company": "ESMC (TSMC + Bosch/Infineon/NXP JV)", "fab_name": "ESMC Dresden 300mm Fab", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.1267, "lon": 13.7798, "coord_precision": "site", "product_types": ["automotive logic", "industrial logic", "IoT logic", "telecommunications", "mixed-signal", "RF", "embedded NVM", "logic foundry"], "wafer_size_mm": [300], "process_nodes": ["28nm planar CMOS", "22nm planar CMOS", "16nm FinFET", "12nm FinFET"], "finest_node": "12nm FinFET", "expected_production_year": "2027", "status": "under_construction", "category": "foundry", "confidence": "high", "notes": "Pure-play TSMC-led foundry JV (TSMC 70%, Bosch 10%, Infineon 10%, NXP 10%; partners are participants, not operators). >EUR10bn investment, up to EUR5bn German state aid (EU Chips Act, EC-approved Aug 2024). Groundbreaking 20 Aug 2024 next to Bosch's Dresden fab in Silicon Saxony; topping-out Jan 2026; tool move-in 2H26; ~40k wpm at full ramp; volume production targeted end-2027. Europe's first FinFET foundry.", "sources": ["https://www.nxp.com/company/about-nxp/newsroom/NW-ESMC-BREAKS-GROUND-ON-DRESDEN-FAB", "https://www.bosch-semiconductors.com/stories/starting-signal-for-state-of-the-art-chip-factory-esmc-in-dresden/", "https://www.trendforce.com/news/2025/11/20/news-tsmc-dresden-fab-reportedly-wraps-structural-build-eyes-equipment-move-in-in-2h26/", "https://evertiq.com/design/2026-01-28-esmc-holds-topping-out-ceremony-at-dresden-fab-site", "https://silicon-saxony.de/en/mitglieder/european-semiconductor-manufacturing-company-esmc-gmbh-2/", "https://business-saxony.com/en/10000-million-euros-semiconductor-manufacturer-tsmc-invests-in-dresden"], "country_iso": "DE", "status_group": "future", "finest_node_nm": 12.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "Foundry-services", "Logic", "Memory/NVM", "Photonics/Opto", "RF"], "site_id": "esmc-tsmc-bosch-infineon-nxp-jv__dresden", "id": "esmc-tsmc-bosch-infineon-dresden-300mm", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 10000.0, "employees": 2000, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "European Semiconductor Manufacturing Company (ESMC) GmbH & Co. KG, Dresden, Germany — the JV operating entity, majority-owned and operated by TSMC", "ultimate_owner": "Taiwan Semiconductor Manufacturing Company Limited (TSMC)", "owner_country_iso": "TW", "ownership_type": "jv", "note": "JV formed Aug 2023, ESMC GmbH & Co. KG registered in Dresden (HRB 44186). Equity split confirmed unchanged as of 2026-07: TSMC 70% (also the fab operator/controlling partner), Robert Bosch GmbH 10%, Infineon Technologies AG 10%, NXP Semiconductors N.V. 10%. No stake sales, dilution, new shareholders, or restructuring publicly reported 2024-2026. Total planned investment >EUR10bn; German federal government approved up to EUR5bn state aid under the EU Chips Act (EC state-aid clearance 20 Aug 2024, funding agreement finalized with all four partners by end-2024). Construction groundbreaking Aug 2024; volume production still targeted ~end of 2027. Given the JV structure, no single national jurisdiction fully controls the entity, but TSMC (Taiwan) holds majority equity and operational control, so it is listed as ultimate/controlling owner; Bosch, Infineon and NXP (all Germany/Netherlands-headquartered, each 10%) are named minority industrial partners.", "source": "https://pr.tsmc.com/english/news/3049", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.infineon.com/press-release/2023/infxxx202308-144"}, "subsidy": {"amount_eur_million": 5000, "authority": "European Commission (state aid) / German Federal Ministry for Economic Affairs and Climate Action (BMWK)", "instrument": "EC state-aid approval (German national grant to ESMC JV, notified individually — not IPCEI)", "decision_date": "2024-08-20", "case_id": "SA.107553", "project_capex_eur_million": 10000, "source": "https://ec.europa.eu/commission/presscorner/api/files/document/print/sw/ip_24_4287/", "note": "European Commission approved a German state-aid measure of up to EUR 5 billion (case SA.107553) on 20 August 2024, supporting ESMC's (TSMC/Bosch/Infineon/NXP JV) Dresden fab with total planned investment of over EUR 10 billion, matching this project's known capex. Groundbreaking/formal launch occurred 13 December 2024 (BMWK press release).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/technology/eu-approves-5-bln-euro-german-aid-esmc-semiconductor-plant-dresden-2024-08-20/", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "capacity": {"value": 40000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "is expected to have a monthly production capacity of 40,000 300mm (12-inch) wafers", "source": "https://pr.tsmc.com/english/news/3169", "year": 2022, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Europe's first advanced-node FinFET foundry led by TSMC, targeted for end-2027 production to anchor automotive and industrial chipmaking in Silicon Saxony with 40k wpm."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.5306, 52.4308]}, "properties": {"company": "Ferdinand-Braun-Institut (FBH)", "fab_name": "FBH III-V Cleanroom (Cleanroom I & II)", "site_city": "Berlin (Adlershof)", "country": "Germany", "in_eu": true, "lat": 52.4308, "lon": 13.5306, "coord_precision": "site", "product_types": ["RF/GaAs", "GaN", "InP", "RF power amplifiers", "MMICs", "mm-wave/THz transistors", "high-power diode lasers", "diode laser bars", "nitride/UV laser diodes", "UV LEDs", "GaN power electronics", "photonics"], "wafer_size_mm": [50, 75, 100], "process_nodes": ["III-V process line on 2\"-4\" (50-100mm) wafers", "photolithography min. feature ~350nm", "e-beam lithography (50nm shape beam, 6nm spot beam) for sub-100nm gate HEMTs", "GaN/GaAs HEMT & HBT, InP HBT for mm-wave/THz", "MOVPE/HVPE epitaxy GaAs- and GaN-based"], "finest_node": "e-beam-defined sub-100nm gate-length HEMTs (R&D); ~350nm photolithography min. feature", "expected_production_year": null, "status": "rd_pilot", "category": "rd_pilot", "confidence": "high", "notes": "~4000 m2 cleanroom+lab at WISTA Adlershof; single site (Cleanroom II is on-campus, not a separate fab). Industry-compatible III-V R&D/pilot line for GaAs/InP/GaN/AlN/SiC on 2\"-100mm; not a volume foundry. Hosts APECS chiplet pilot-line work.", "sources": ["https://www.fbh-berlin.de/en/research/iii-v-technology", "https://www.fbh-berlin.de/en/research/iii-v-technology/process-technology", "https://en.wikipedia.org/wiki/Ferdinand-Braun-Institut", "https://www.fbh-berlin.de/en/research/research-news/3-dimensional-integration-of-sige-bicmos-and-inp-hbt-technology", "https://www.fbh-berlin.de/en/about-us/facts-figures", "https://www.fbh-berlin.de/en/about-us/fbh-historically"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": 100.0, "max_wafer_mm": 100, "tags": ["Discrete", "Foundry-services", "GaN", "Photonics/Opto", "Power", "RF", "SiC", "Substrate/epi"], "site_id": "ferdinand-braun-institut-fbh__berlin-adlershof", "id": "ferdinand-braun-institut-berlin-adlershof-100mm-gan", "year_opened": 1992, "year_first_production": null, "investment_eur_million": null, "employees": 400, "region": "Berlin", "last_verified": "2026-06", "owner": {"parent": "State of Berlin (Land Berlin)", "ultimate_owner": "State of Berlin (Land Berlin)", "owner_country_iso": "DE", "ownership_type": "state", "note": "Sole shareholder is the State of Berlin (represented by Senate Department for Finance); non-profit gGmbH legal form; became independent entity on January 1, 2021 after leaving Forschungsverbund Berlin; member of Leibniz Association (funding framework, not ownership)", "source": "https://www.fbh-berlin.de/en/about-us/structure", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "East Germany's flagship III-V compound fab, pioneering sub-100nm e-beam-defined HEMTs for mm-wave/THz; public-funded R&D line hosting APECS chiplet-integration work."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.321, 52.512]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer HHI Photonic InP Foundry / pilot line (Berlin)", "site_city": "Berlin", "country": "Germany", "in_eu": true, "lat": 52.512, "lon": 13.321, "coord_precision": "site", "product_types": ["photonics", "InP photonic integrated circuits", "lasers", "modulators", "photodiodes", "SOAs", "RF/InP"], "wafer_size_mm": [76], "process_nodes": ["3-inch InP generic photonic integration platform", "InP PIC MPW platform", "active/passive InP (lasers, SOAs, modulators, photodiodes, passive waveguides)"], "finest_node": "InP PIC platform (no CMOS-style node disclosed); 3-inch InP, scaling toward larger wafers", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "medium", "notes": "Open InP foundry/pilot line at Einsteinufer 37, Charlottenburg. 3-inch (~76mm) InP MPW with PDK; working toward larger wafers. FMD member; JEPPIX/InPulse/PIXEurope InP pilot-line partner. Also polymer/SiN hybrid integration (same fab).", "sources": ["https://www.hhi.fraunhofer.de/en/departments/inp-and-rf/technologies-and-solutions/photonic-inp-foundry/foundry-services-for-inp-based-photonic-integrated-circuits.html", "https://www.jeppix.eu/foundries/hhi-in-detail/", "https://www.hhi.fraunhofer.de/en/press/news/2025/photonics-for-the-future-fmd-visits-fraunhofer-hhi.html", "https://www.hhi.fraunhofer.de/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 76, "tags": ["Foundry-services", "Photonics/Opto", "Power", "RF"], "site_id": "fraunhofer__berlin", "id": "fraunhofer-berlin-76mm-inp", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Berlin", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Open InP foundry serving European photonics startups; offers 3-inch multi-project wafer runs for photonic integrated circuits via JEPPIX."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [12.9295, 50.8133]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer ENAS / Center for Microtechnologies (ZfM) cleanroom (Chemnitz)", "site_city": "Chemnitz", "country": "Germany", "in_eu": true, "lat": 50.8133, "lon": 12.9295, "coord_precision": "city", "product_types": ["MEMS", "NEMS", "micro/nano integration", "wafer-level packaging", "sensors"], "wafer_size_mm": [150, 200], "process_nodes": ["MEMS/NEMS micro- & nano-fabrication", "wafer-level packaging"], "finest_node": "unknown (MEMS/NEMS R&D; wafer size/node not stated on official ENAS pages)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "low", "notes": "Operated jointly with TU Chemnitz Center for Microtechnologies (ZfM). Listed as a 200mm 'focus cleanroom' in Fraunhofer group strategy; MEMS/NEMS on 150/200mm. Wafer diameter not disclosed on official pages.", "sources": ["https://www.enas.fraunhofer.de/en.html", "https://www.ipms.fraunhofer.de/en/cleanrooms/mems-technologies-dresden/Fraunhofer-Group-for-Microelectronics.html", "https://www.3dincites.com/2014/03/cluster-for-3d-integration-looks-big-picture/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["MEMS", "Sensors"], "site_id": "fraunhofer__chemnitz", "id": "fraunhofer-chemnitz-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "German public research cleanroom for MEMS and wafer-level packaging, part of Fraunhofer's microelectronics infrastructure mission."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.787, 51.124]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IPMS Center Nanoelectronic Technologies (CNT) 300mm CMOS R&D line (Dresden)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.124, "lon": 13.787, "coord_precision": "site", "product_types": ["logic", "CMOS", "memory", "embedded NVM (FeRAM/MRAM/ReRAM)", "smart power", "quantum (Si qubits)", "ULSI test chips", "advanced/heterogeneous integration", "chiplets", "interposers"], "wafer_size_mm": [300], "process_nodes": ["300mm CMOS process modules (FEOL & BEOL)", "22FDX module development (with GlobalFoundries)", "smart-power modules 300mm (with Infineon)", "NVM (FeRAM/MRAM) modules", "nanopatterning / e-beam lithography", "wafer-level chiplet / quasi-monolithic integration (QMI)"], "finest_node": "22nm (22FDX module development; not a standalone full-logic flow; no numeric node marketed by IPMS)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Largest 300mm R&D cleanroom in Germany (~4000 m2, An der Bartlake 5 / former Qimonda area), 80+ industry-standard tools, ISO 9001 / SEMI-compatible. Develops CMOS/NVM/smart-power modules (not full flows); 22FDX with GlobalFoundries, 300mm smart-power with Infineon, memory dev with NY CREATES. Front-end of CEASAX; hosts APECS / QMI wafer-level chiplet work (announced). Not volume mfg.", "sources": ["https://www.ipms.fraunhofer.de/en/cleanrooms/300mm-semiconductor-processes.html", "https://www.cmos-center.com/en/press/2025/300mm-Lab-to-Fab.html", "https://silicon-saxony.de/en/fraunhofer-ipms-supports-the-300-mm-process-development-of-smart-power-technologies-for-the-semiconductor-manufacturer-infineon-at-the-dresden-site/", "https://nachrichten.idw-online.de/2025/05/16/ny-creates-and-fraunhofer-ipms-announce-joint-development-agreement-to-advance-memory-devices-at-300mm-wafer-scale", "https://www.semiconductor-digest.com/fraunhofer-ipms-develops-high-density-chiplet-systems-at-the-wafer-level/", "https://www.ipms.fraunhofer.de/en/press-media/press/2025/20-Years-of-CNT.html"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 22.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Discrete", "Logic", "Memory/NVM", "Power"], "site_id": "fraunhofer__dresden", "id": "fraunhofer-dresden-300mm", "year_opened": 2005, "year_first_production": null, "investment_eur_million": 140.0, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Germany's largest academic 300mm R&D cleanroom; bridges industry partnerships across logic (GlobalFoundries), power (Infineon), memory (NY CREATES), and quantum integration."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.784, 51.128]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IPMS 200mm MEMS/MOEMS cleanroom (Dresden)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.128, "lon": 13.784, "coord_precision": "site", "product_types": ["MEMS", "MOEMS", "sensors", "actuators", "microscanners / micro-mirrors", "microdisplays", "optical MEMS", "wafer bonding", "photonics"], "wafer_size_mm": [200], "process_nodes": ["200mm MEMS/MOEMS surface & bulk micromachining", "MEMS/MOEMS process modules", "wafer bonding", "microdisplay processing"], "finest_node": "MEMS process (no CMOS node; feature size not publicly stated)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Main IPMS campus, Maria-Reiche-Str. 2, Dresden-Klotzsche. ~1500 m2 ISO class 4 cleanroom for MEMS/MOEMS technology development through pilot production on 200mm (upgraded 150->200mm, EUR ~30M). R&D/pilot, not volume. No CMOS node disclosed.", "sources": ["https://www.ipms.fraunhofer.de/en/cleanrooms.html", "https://www.ipms.fraunhofer.de/en/cleanrooms/mems-technologies-dresden.html", "https://cleanroomtechnology.com/fraunhofer-ipms-to-upgrade-cleanroom-in-30m-investment-112593", "https://www.dresden.fraunhofer.de/en/institutes/fraunhofer_ipms.html", "https://www.ipms.fraunhofer.de/en/about/30-Years-Fraunhofer-Dresden.html"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Discrete", "MEMS", "Photonics/Opto", "RF", "Sensors"], "site_id": "fraunhofer__dresden", "id": "fraunhofer-dresden-200mm", "year_opened": 2007, "year_first_production": null, "investment_eur_million": 30.0, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Academic research pilot for advanced MEMS sensors and optical micro-devices; scaled to 200mm for higher-complexity device prototyping."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.784, 51.128]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IPMS 200mm microdisplay / OLED-on-silicon cleanroom (Dresden)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.128, "lon": 13.784, "coord_precision": "site", "product_types": ["microdisplays", "OLED-on-silicon", "image sensors", "thin-film devices", "photonics", "sensors"], "wafer_size_mm": [200], "process_nodes": ["200mm OLED-on-CMOS backplane / microdisplay processing (node not disclosed)", "thin-film encapsulation, patterning, layer characterization (200mm)"], "finest_node": "n/a (thin-film/microdisplay backplane, no CMOS node marketed)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Dedicated ~300 m2 ISO class 5 microdisplay/OLED-on-silicon cleanroom, Maria-Reiche-Str. 2, Dresden-Klotzsche; listed separately from the MEMS/MOEMS cleanroom in official IPMS materials. Thin-film encapsulation, structuring, layer characterization. OLED-on-Si framing partly shared with Fraunhofer FEP. R&D/pilot only.", "sources": ["https://www.ipms.fraunhofer.de/en/cleanrooms.html", "https://www.ipms.fraunhofer.de/en/cleanrooms/mems-technologies-dresden/OLED-microdisplay-cleanroom.html", "https://www.reinraum.de/en/news/leading-edge-semiconductor-research-on-200-300-mm-wafers-in-the-heart-of-silicon-saxony-and-europe.html", "https://www.ipms.fraunhofer.de/en/about/30-Years-Fraunhofer-Dresden.html"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Discrete", "MEMS", "Photonics/Opto", "Sensors"], "site_id": "fraunhofer__dresden", "id": "fraunhofer-dresden-200mm-2", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Fraunhofer's dedicated 300 m² microdisplay R&D lab specializes in thin-film OLED-on-silicon devices for AR/VR and image sensors, operating as a government-backed pilot line for emerging display technology."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.627, 51.145]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IZM-ASSID 200/300mm 3D wafer-level integration pilot line (Dresden-Moritzburg)", "site_city": "Dresden-Moritzburg", "country": "Germany", "in_eu": true, "lat": 51.145, "lon": 13.627, "coord_precision": "site", "product_types": ["3D wafer-level integration", "TSV through-silicon-via", "RDL/silicon interposers", "wafer thinning / thin-wafer handling", "temporary bonding/debonding", "wafer-level assembly / 3D stacking", "system-in-package", "chiplet/heterogeneous integration", "advanced packaging R&D"], "wafer_size_mm": [200, 300], "process_nodes": ["300mm 3D wafer-level integration (Cu-TSV via-middle/via-last, RDL, silicon interposer, thinning, temporary bonding, 3D stack formation) - no FEOL CMOS node; processes incoming foundry wafers/die"], "finest_node": "n/a (back-end-of-line / wafer-level only; no FEOL CMOS node)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Pilot/low-volume R&D line, Ringstr. 12, Dresden-Moritzburg; ~1000 m2 cleanroom, est. 2010 (Germany's first 300mm 3D-integration research line, built from former Qimonda fab). BEOL/WLP only, no CMOS FEOL. Back-end anchor of CEASAX (with IPMS CNT front-end) and core APECS EU Chips Act pilot-line partner.", "sources": ["https://blog.izm.fraunhofer.de/from-idea-to-product-sample-in-one-year-the-philosophy-of-fraunhofer-izm-assid/", "https://www.izm.fraunhofer.de/content/dam/izm/de/documents/Abteilungen/ASSID_All_Silicon_System_Integration_Dresden/ASSID_flyer_online(2a).pdf", "https://www.dresden.fraunhofer.de/en/institutes/fraunhofer_izm-assid.html", "https://nachrichten.idw-online.de/2025/06/25/15-years-of-fraunhofer-izm-assid-the-future-of-microelectronics-shaped-by-fraunhofer-izms-dresden-site", "https://silicon-saxony.de/en/fraunhofer-izm-assid-15-years-of-fraunhofer-izm-assid-dresden-branch-shapes-the-future-of-microelectronics/"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Discrete", "Foundry-services"], "site_id": "fraunhofer__dresden-moritzburg", "id": "fraunhofer-dresden-moritzbu-300mm", "year_opened": 2010, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Germany's pioneer academic chiplet and 3D-integration R&D line, born from a defunct Qimonda fab and now anchoring EU Chips Act initiatives in wafer stacking and heterogeneous packaging."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.7969, 51.4283]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IMS 200mm CMOS line (Duisburg)", "site_city": "Duisburg", "country": "Germany", "in_eu": true, "lat": 51.4283, "lon": 6.7969, "coord_precision": "site", "product_types": ["CMOS image sensors", "mixed-signal/analog ASICs", "smart sensors", "smart-power"], "wafer_size_mm": [200], "process_nodes": ["0.35um CMOS", "0.18um CMOS"], "finest_node": "0.18um (180nm) CMOS", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "medium", "notes": "200mm (8\") CMOS line for image sensors and ASICs; prototyping plus small/medium-volume production. 0.35um/0.18um nodes widely reported but not in primary Fraunhofer sources. Finkenstr. 61, Duisburg.", "sources": ["https://www.ims.fraunhofer.de/en.html", "https://www.ipms.fraunhofer.de/en/cleanrooms/mems-technologies-dresden/Fraunhofer-Group-for-Microelectronics.html", "https://www.ims.fraunhofer.de/content/dam/ims/de/documents/Jahresberichte/Fraunhofer%20IMS_annual%20report_2016.pdf", "https://www.irel40.eu/fraunhofer-ims"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Foundry-services", "Power", "Sensors", "SiC"], "site_id": "fraunhofer__duisburg", "id": "fraunhofer-duisburg-200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 150, "region": "North Rhine-Westphalia", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Public research fab prototyping 180nm CMOS for image sensors and mixed-signal ASICs; small/medium-volume production feeding German automotive and industrial sectors."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.0286, 49.5731]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IISB pi-Fab silicon CMOS line (Erlangen, 200mm Si CMOS / 150mm HT-CMOS)", "site_city": "Erlangen", "country": "Germany", "in_eu": true, "lat": 49.5731, "lon": 11.0286, "coord_precision": "site", "product_types": ["logic", "power", "analog", "mixed-signal", "sensors", "MEMS", "ASIC prototyping"], "wafer_size_mm": [150, 200], "process_nodes": ["200mm industry-compatible silicon CMOS (node not publicly specified)", "150mm HT-CMOS (high-temperature analog/digital, up to ~600C)", "Si power-device front-end"], "finest_node": "unknown (200mm industry-compatible Si CMOS; no public node)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "medium", "notes": "IISB pi-Fab continuous Si-CMOS prototype line, Erlangen. 200mm industry-compatible Si CMOS (being qualified for SiC under FMD) plus 150mm HT-CMOS platform with preliminary PDK. '130nm'/Europractice MPW claims not publicly confirmed; treated as unspecified R&D prototype line.", "sources": ["https://www.iisb.fraunhofer.de/en/services/pi-Fab.html", "https://www.iisb.fraunhofer.de/en/services.html", "https://www.iisb.fraunhofer.de/en.html", "https://www.irel40.eu/fraunhofer-iisb", "https://www.iisb.fraunhofer.de/"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Foundry-services", "Logic", "MEMS", "Power", "Sensors", "SiC"], "site_id": "fraunhofer__erlangen", "id": "fraunhofer-erlangen-200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Continuous Si-CMOS prototype line featuring 200mm industry-compatible CMOS and 150mm high-temperature CMOS rated to 600°C for extreme-environment ASICs."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.0286, 49.5731]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IISB 150mm SiC power-device pilot line (Erlangen)", "site_city": "Erlangen", "country": "Germany", "in_eu": true, "lat": 49.5731, "lon": 11.0286, "coord_precision": "site", "product_types": ["SiC power devices", "power MOSFETs", "diodes", "SiC epitaxy"], "wafer_size_mm": [150], "process_nodes": ["150mm SiC power device process", "150mm SiC epitaxy (VPE, Aixtron G5WW 8x150mm)", "Si/SiC epitaxy"], "finest_node": "150mm SiC power device process", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "IISB 'complete 150mm SiC process line' for prototype power devices (MOSFETs, diodes, HV classes), called 'unique in Europe'; integrated 150mm SiC VPE epitaxy (Aixtron G5WW). Standalone '2um SiC CMOS via Europractice' claim removed (unconfirmed).", "sources": ["https://www.iisb.fraunhofer.de/en/services/sic-services.html", "https://www.iisb.fraunhofer.de/en/research_areas/materials/silicon_carbide.html", "https://compoundsemiconductor.net/article/95023/Aixtron_teams_up_with_Fraunhofer_IISB_to_improve__SiC_production", "https://www.iisb.fraunhofer.de/en.html", "https://www.iisb.fraunhofer.de/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Power", "SiC", "Substrate/epi"], "site_id": "fraunhofer__erlangen", "id": "fraunhofer-erlangen-150mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Europe's unique complete SiC power-device research line, integrating epitaxy and processing to prototype next-generation wide-bandgap chips."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.0286, 49.5731]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IISB 200mm SiC line / demo lab (Erlangen, ramp-up)", "site_city": "Erlangen", "country": "Germany", "in_eu": true, "lat": 49.5731, "lon": 11.0286, "coord_precision": "site", "product_types": ["SiC", "power", "SiC epitaxy", "implant annealing"], "wafer_size_mm": [200], "process_nodes": ["200mm SiC epitaxy (Aixtron Planetary Reactor)", "200mm SiC implant annealing", "200mm SiC substrate/process technology development"], "finest_node": "200mm SiC power device process (in development)", "status": "under_construction", "expected_production_year": "unknown", "category": "compound_semi", "confidence": "medium", "notes": "IISB is ramping up its 200mm SiC line ('many tools/processes ready, gaps closing soon'). 200mm SiC demo lab pioneering epitaxy + implant annealing; 200mm-capable Aixtron SiC Planetary Reactor. Linked to EU REACTION 200mm SiC pilot-line project. No completion date / full device flow disclosed.", "sources": ["https://www.iisb.fraunhofer.de/en/services/sic-services.html", "https://www.iisb.fraunhofer.de/en/research_areas/materials/silicon_carbide.html", "https://www.iisb.fraunhofer.de/en/press_media/press_releases/pressearchiv/archiv_2021/200mm_SiC_Epitaxy.html", "https://cordis.europa.eu/project/id/783158", "https://www.iisb.fraunhofer.de/"], "country_iso": "DE", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "fraunhofer__erlangen", "id": "fraunhofer-erlangen-200mm-sic-2", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 13.3, "authority": "Bayerisches Staatsministerium fuer Wirtschaft, Landesentwicklung und Energie (StMWi) / Chips Joint Undertaking (EU) / BMBF (Germany)", "instrument": "EU Chips Act \"WBG\" Pilot Line (Chips Joint Undertaking) national/regional co-funding — Bavarian state Foerderbescheid (grant notice) enabling matched EU/federal (BMBF) funds", "decision_date": "2025-03-21", "case_id": null, "project_capex_eur_million": null, "source": "https://www.bayern.de/wirtschaftsminister-aiwanger-bergibt-frderbescheide-im-wert-von-ber-13-millionen-euro/", "note": "No EC state-aid SA.xxxxx case found for this project. Funding flows instead via the EU Chips Act \"WBG\" (Wide-Bandgap) Pilot Line under the Chips Joint Undertaking, in which Fraunhofer IISB Erlangen is confirmed (Bavarian govt press release, 21 Mar 2025) as the sole German institute participant. That date, Bavaria's economy ministry handed over approved Foerderbescheide totaling over EUR 13.3 million in Bavarian state funds to four Fraunhofer institutes (AISEC, EMFT, IIS, IISB) across TWO Chips Act pilot lines (APECS + WBG combined) — this state funding is the prerequisite unlocking a further ~EUR 66 million in EU/federal (BMBF/Chips JU) co-funding, for a combined ~EUR 80 million infrastructure investment in Bavaria. No public source breaks out IISB's individual share or a figure specific to the 200mm SiC line/demo lab alone, so the EUR 13.3M reported here is the approved Bavarian-state portion of a shared multi-institute, multi-pilot-line grant, not an isolated capex figure for this project. Program-level context: the WBG pilot line's total documented budget is ~EUR 360M (~EUR 180M EU/Chips JU + ~EUR 180M national/private co-funding across 7 EU countries incl. Germany, Italy, Sweden, Finland, Poland, France, Austria); no per-institute breakdown is public. Project capex for the IISB 200mm SiC line itself is not publicly disclosed (input record listed inv=0/unknown).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.bayern-innovativ.de/en/emagazine/digitization/detail/wirtschaftsminister-aiwanger-uebergibt-foerderbescheide/", "channel": "eu_direct", "channel_label": "EU direct (Chips JU)"}, "summary": "Fraunhofer's ramping 200mm SiC line pioneering epitaxy and implant annealing; linked to EU REACTION pilot establishing independent European SiC device-readiness."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [7.832, 48.0196]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer IAF III-V compound-semiconductor cleanroom / research fab (Freiburg)", "site_city": "Freiburg im Breisgau", "country": "Germany", "in_eu": true, "lat": 48.0196, "lon": 7.832, "coord_precision": "site", "product_types": ["GaN RF/HEMT", "GaN power", "GaAs MMIC", "InP", "GaN-on-SiC", "GaN-on-Si", "InGaAs", "RF/mmWave", "infrared", "diamond/quantum sensing", "compound semiconductor"], "wafer_size_mm": [50, 100, 150, 200], "process_nodes": ["GaN HEMT MOCVD epitaxy on 4\"/6\"/8\" (100/150/200mm)", "GaN-on-SiC RF MMIC", "GaN-on-Si power & RF", "GaAs III-V", "0.5um HEMT gate", "100nm HEMT gate", "50nm HEMT gate"], "finest_node": "50nm gate-length GaN-on-SiC HEMT", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Sole Fraunhofer IAF wafer fab, Tullastr. 72, Freiburg. III-V cleanroom (GaAs/InP/GaN/GaN-on-SiC) + diamond/quantum; MPW runs down to 50nm HEMT gate. APECS pilot adds 150mm GaN-on-SiC + InGaAs-on-Si chiplets/interposers. R&D/pilot, not volume.", "sources": ["https://www.iaf.fraunhofer.de/en/customers/measurement-services/wafer-runs.html", "https://www.iaf.fraunhofer.de/en/media-library/press-releases/european-chiplet-innovation-apecs-pilot-line-starts.html", "https://www.iaf.fraunhofer.de/en/customers/electronic-circuits/gan-high-frequency-electronics/portfolio.html", "https://www.iaf.fraunhofer.de/en/customers/electronic-circuits/power-electronics.html", "https://www.semiconductor-today.com/news_items/2024/dec/fraunhoferiaf-apecs-181224.shtml", "https://www.iaf.fraunhofer.de/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 50.0, "max_wafer_mm": 200, "tags": ["Foundry-services", "GaN", "Photonics/Opto", "Power", "RF", "SiC", "Substrate/epi"], "site_id": "fraunhofer__freiburg-im-breisgau", "id": "fraunhofer-freiburg-im-brei-200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Baden-Wuerttemberg", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Academic compound-semiconductor innovation hub spanning RF, power GaN, and quantum sensing; piloting next-generation chiplet integration."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.5374, 53.9226]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer ISIT 200mm MEMS / power line (Itzehoe)", "site_city": "Itzehoe", "country": "Germany", "in_eu": true, "lat": 53.9226, "lon": 9.5374, "coord_precision": "site", "product_types": ["MEMS", "MOEMS", "NEMS", "power electronics", "power MOS / PowerMOS", "sensors", "inertial sensors", "micro-mirrors", "piezoelectric MEMS", "wafer-level packaging", "lithium batteries"], "wafer_size_mm": [150, 200], "process_nodes": ["200mm MOS / PowerMOS front-end", "200mm MEMS/microsystems process line (e.g. PSM-X2 inertial process)", "200mm power electronics", "150mm legacy/R&D line", "wafer-level packaging", "glass/silicon cap wafers", "3D glass micromachining", "CMP"], "finest_node": "200mm MOS/PowerMOS (CMOS node not publicly stated; ~0.35um-class typical)", "status": "operational", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Sole ISIT fab and one of Fraunhofer's two main 200mm silicon sites (with IPMS). ~2500 m2 MOS/PowerMOS + ~1000 m2 MEMS/MOEMS; transitioned 150->200mm (~36.6M EUR upgrade ~2012). Pilot to low/mid-volume. Fraunhoferstr. 1, Itzehoe. Co-located with X-FAB and Vishay (separate firms). No 300mm.", "sources": ["https://www.isit.fraunhofer.de/en/technology.html", "https://www.isit.fraunhofer.de/en/technology/micro-manufacturing-processes.html", "https://www.reinraum.de/en/news/development-of-the-semiconductor-location-itzehoe.html", "https://www.lifesciencenord.de/en/the-cluster/places/fraunhofer-isit.html", "https://www.isit.fraunhofer.de/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 350.0, "max_wafer_mm": 200, "tags": ["MEMS", "Photonics/Opto", "Power", "Sensors"], "site_id": "fraunhofer__itzehoe", "id": "fraunhofer-itzehoe-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": 37.0, "employees": null, "region": "Schleswig-Holstein", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "One of Fraunhofer's two flagship 200mm silicon sites, this MEMS and power-electronics facility co-locates with commercial fabs (X-FAB, Vishay) to bridge pilot innovation and volume manufacturing at mature nodes."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.5267, 48.1573]}, "properties": {"company": "Fraunhofer", "fab_name": "Fraunhofer EMFT Munich microelectronics/microsystems line (150mm MEMS + 200mm CMOS pilot, 3D integration)", "site_city": "Munich", "country": "Germany", "in_eu": true, "lat": 48.1573, "lon": 11.5267, "coord_precision": "site", "product_types": ["MEMS", "sensors", "actuators", "silicon sensors", "CMOS", "3D integration / TSV", "wafer-level packaging", "advanced packaging", "flexible electronics", "heterogeneous integration", "smart integration"], "wafer_size_mm": [150, 200], "process_nodes": ["200mm CMOS-compatible front-end pilot line (no named logic node)", "150mm MEMS line (some tools up to 200mm)", "tungsten-filled high-aspect-ratio TSV 3D-integration", "SLID (solid-liquid interdiffusion) wafer/die bonding", "wafer-level integration"], "finest_node": "200mm CMOS pilot line, no publicly named logic node (R&D MEMS/CMOS/3D-integration, not a foundry platform)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "EMFT's only documented front-end line, Hansastr., Munich (also a Regensburg site). 150mm MEMS + 200mm CMOS pilot, W-filled TSVs, SLID bonding, 3D stacking. R&D/pilot, FMD network member. No 300mm.", "sources": ["https://www.emft.fraunhofer.de/en/technologies-microelectronics-microsystem-technology/mems-line.html", "https://www.emft.fraunhofer.de/en.html", "https://arxiv.org/html/2504.18173v7", "https://www.nanoinnovation2020.eu/home/PPT/High-density%20W-filled%20TSVs%20for%20advanced%203D-Integration.pdf", "https://www.emft.fraunhofer.de/"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Foundry-services", "Logic", "MEMS", "Photonics/Opto", "Sensors"], "site_id": "fraunhofer__munich", "id": "fraunhofer-munich-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "German Federal Government & Länder", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Non-profit registered association (eingetragener Verein, e.V.); no corporate parent entity; German state exercises political ownership via funding (30% institutional grants from federal government ~90% and Länder ~10%) and 1977 governance agreement with Federal Defense & Research Ministries; no equity shareholders; members include companies and sponsors", "source": "https://en.wikipedia.org/wiki/Fraunhofer-Gesellschaft", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Munich's MEMS and advanced-packaging research hub, combining 150mm sensor fabrication with 200mm CMOS pilot lines for TSV integration and flexible-electronics prototyping."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.3417, 50.9165]}, "properties": {"company": "Freiberger Compound Materials", "fab_name": "Freiberg GaAs/InP/GaN substrate plant", "site_city": "Freiberg", "country": "Germany", "in_eu": true, "lat": 50.9165, "lon": 13.3417, "coord_precision": "city", "product_types": ["GaAs", "InP", "GaN", "compound semiconductor substrates", "RF/GaAs", "photonics", "optoelectronics"], "wafer_size_mm": [76, 100, 150, 200], "process_nodes": ["VGF GaAs crystal growth", "LEC GaAs crystal growth", "HVPE GaN growth", "100mm GaAs substrate", "150mm GaAs substrate", "200mm GaAs substrate"], "finest_node": "200mm (8-inch) GaAs substrate (VGF) — largest diameter; LEC up to 150mm", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Sole European site in Freiberg; only maker using both VGF and LEC for GaAs. Also InP and GaN (HVPE). 200mm SI VGF GaAs was an R&D milestone. ~87.5% owned by Israel's Federmann Enterprises Ltd.", "sources": ["https://freiberger.com/en/", "https://freiberger.com/en/technology/", "https://freiberger.com/en/products/gaas-wafer/", "https://compoundsemiconductor.net/article/81679/Freiberger_produces_first_200_mm_semi-insulating_GaAs_wafers_using_VGF_technology", "https://www.hzdr.de/db/Cms?pOid=75771&pNid=0&pLang=en", "https://business-saxony.com/en/focus-on-gallium-arsenide"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["GaN", "Photonics/Opto", "RF", "Substrate/epi"], "site_id": "freiberger-compound-materials__freiberg", "id": "freiberger-compound-mate-freiberg-200mm-gan", "year_opened": 1997, "year_first_production": null, "investment_eur_million": 200.0, "employees": 350, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "Federmann Enterprises Ltd.", "ultimate_owner": "Michael Federmann & Federmann family", "owner_country_iso": "IL", "ownership_type": "private", "note": "Acquired by Federmann Enterprises Ltd. (Israeli holding company) in 1995; Siemens/Infineon held 12.5% minority stake as of 1997 (current status of this stake not publicly confirmed); Michael Federmann is controlling shareholder of Federmann Enterprises through Israeli holding vehicle structure (Beit Bella Ltd, Beit Yekutiel Ltd); family ownership includes children David, Gideon, Daniel, sister Irit, cousin Ami and relatives", "source": "https://business-saxony.com/en/focus-on-gallium-arsenide", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 13.245231, "authority": "Bundesministerium für Wirtschaft und Klimaschutz (BMWK), Germany — under IPCEI Mikroelektronik und Kommunikationstechnologien (ME/KT) framework", "instrument": "National grant under IPCEI ME/KT (Important Project of Common European Interest — Microelectronics and Communication Technologies), project \"SuMiCo\"", "decision_date": "Project runs 2022-10-26 to 2026-12-31 (official BMWK project profile published/dated January 2024)", "case_id": "Förderkennzeichen 16IPCEI212 (no separate EC SA.xxxxx state-aid case number publicly identified for this specific grant)", "project_capex_eur_million": 200, "source": "https://www.bundeswirtschaftsministerium.de/Redaktion/DE/Downloads/I/Ipcei-Projektsteckbriefe-2/2024-01-ipcei-mekt-projektsteckbrief-freiberger.pdf?__blob=publicationFile&v=2", "note": "Official BMWK document confirms a €13.245231M German federal grant (Förderkennzeichen 16IPCEI212) to Freiberger Compound Materials under IPCEI ME/KT for project \"SuMiCo,\" matching the entry's fab (larger-diameter GaN/InP/GaAs substrate production, Freiberg). This is the only project-specific, itemized public-funding figure found for this fab; no distinct EC SA.xxxxx case number or EU Chips Act direct-grant figure was located, and this national IPCEI grant amount (13.2M) is far smaller than the entry's listed 200M EUR capex, so it should be read as partial R&D/expansion co-funding, not full project financing. Earlier company history (2015 Fab II extension, 2018 Fab III acquisition, 2011/2014 GaN R&D funding via Saxony/EFRE) is documented but without itemized euro figures for state aid beyond the general statement that the >200M EUR invested by the Federmann group since 1995 was \"partly with state subsidies.\"", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://oiger.de/2024/04/22/freiberger-halbleiterfirma-europa-braucht-neue-gallium-quellen/190628", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Europe's largest GaAs/InP substrate maker and first to produce 200mm semi-insulating GaAs via VGF; Israeli-owned but German-operated, supplying RF and optoelectronics."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.6776, 51.0904]}, "properties": {"company": "GlobalFoundries", "fab_name": "Dresden Fab 1", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.0904, "lon": 13.6776, "coord_precision": "site", "product_types": ["FD-SOI", "feature-rich CMOS", "RF / RF-SOI", "power", "automotive", "industrial", "IoT", "analog"], "wafer_size_mm": [300], "process_nodes": ["22nm FD-SOI (22FDX)", "28nm (28SLPe)", "40nm", "45nm", "55nm"], "finest_node": "22nm FD-SOI (22FDX)", "status": "expanding", "expected_production_year": null, "category": "foundry", "confidence": "high", "notes": "GF's only European front-end fab (Silicon Saxony), former AMD Fab 36/38. 300mm specialty foundry: 22FDX/FD-SOI, RF-SOI, feature-rich CMOS, power/automotive/IoT, ~45nm-22nm. ~950k wpy; Oct-2025 EUR1.1bn 'Project SPRINT' expansion toward >1M wafers/yr by 2028 (Chips Act funded).", "sources": ["https://gf.com/manufacturing/dresden/", "https://anysilicon.com/news/globalfoundries-announces-e1-1-billion-investment-to-expand-dresden-fab-under-project-sprint/", "https://gf.com/about-us/about-gf-in-europe/dresden-facts-figures-data/", "https://semiwiki.com/semiconductor-manufacturers/globalfoundries/360793-globalfoundries-2025-update/", "https://investors.gf.com/news-releases/news-release-details/globalfoundries-plans-billion-euro-investment-expand-chip", "https://business-saxony.com/en/news-events/news/news-detail/n1945-globalfoundries-startet-mit-erweiterung-des-dresdner-chipwerkes"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 22.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "Foundry-services", "Logic", "Power", "RF", "Substrate/epi"], "site_id": "globalfoundries__dresden", "id": "globalfoundries-dresden-300mm-soi", "year_opened": 2009, "year_first_production": null, "investment_eur_million": 1100.0, "employees": 3000, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "Mubadala Investment Company PJSC (via Mubadala Technology Investment Company and affiliated investment vehicles)", "ultimate_owner": "Mubadala Investment Co. (Abu Dhabi state)", "owner_country_iso": "AE", "ownership_type": "state", "note": "GlobalFoundries Inc. (NASDAQ: GFS) has been publicly traded since its Oct 2021 IPO, but Mubadala Investment Company PJSC (Abu Dhabi sovereign wealth fund, wholly owned by the Government of Abu Dhabi) remains the controlling shareholder throughout 2021-2026: ~82% post-IPO (2021) -> ~80.94% just before a Feb 2026 secondary offering -> 77.05% currently (423,042,773 of 549,072,416 ordinary shares outstanding as of March 13, 2026, per Schedule 13G/A Amendment No. 2). The reduction", "source": "https://www.sec.gov/Archives/edgar/data/1709048/000170904826000030/globalfoundriesinc424b7.htm", "confidence": "high", "verified": "unreachable", "as_of": "2026-07-17", "source2": "https://www.stocktitan.net/sec-filings/GFS/schedule-13g-a-globalfoundries-inc-amended-passive-investment-disclos-85edfe3598e4.html"}, "subsidy": {"amount_eur_million": 495, "authority": "European Commission (state aid) / German federal government", "instrument": "EC state-aid approval of German direct grant, under EU Chips Act framework (Project SPRINT — 300mm wafer capacity expansion at Dresden Fab 1)", "decision_date": "2025-12-11", "case_id": "SA.118843", "project_capex_eur_million": 1100, "source": "https://europa.eu/newsroom/ecpc-failover/pdf/ip-25-3020_en.pdf", "note": "EC approved case SA.118843 (€495m direct grant, GlobalFoundries Dresden) alongside SA.119086 (€128m, X-FAB Erfurt), totaling €623m in German Chips Act state aid; GlobalFoundries' Dresden expansion (Project SPRINT) is announced at €1.1bn total investment, implying ~45% public co-funding of the announced capex.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.gf.com/news-releases/news-release-details/globalfoundries-plans-billion-euro-investment-expand-chip", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "capacity": {"value": 80000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "maximum full capacity of 80,000 300 mm wafers per month", "source": "https://gf.com/manufacturing/dresden/", "year": 2024, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "GF's only European foundry, formerly AMD's Dresden fab; produces 22nm FD-SOI and RF-SOI for automotive and IoT under a €1.1bn expansion toward >1M wafers yearly."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [14.5132, 52.3412]}, "properties": {"company": "IHP (Leibniz)", "fab_name": "IHP 200mm SiGe BiCMOS Pilot Line", "site_city": "Frankfurt (Oder)", "country": "Germany", "in_eu": true, "lat": 52.3412, "lon": 14.5132, "coord_precision": "site", "product_types": ["RF/mm-wave SiGe BiCMOS", "mixed-signal", "silicon photonics", "photonic-electronic co-integration", "chiplet heterointegration", "high-frequency analog"], "wafer_size_mm": [200], "process_nodes": ["130nm SiGe BiCMOS (SG13G2 / SG13G3 / SG13 family)", "250nm SiGe BiCMOS (SG25 family)"], "finest_node": "130nm SiGe BiCMOS (SG13G2/SG13G3)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "200mm research pilot line / MPW foundry, ~1,500m2 cleanroom + ~300m2 post-processing/bonding/chiplet heterointegration; I-line + DUV(248nm) litho; silicon photonics on same line; SG13G3 licensed to X-FAB. No 300mm line.", "sources": ["https://monitor-industrial-ecosystems.ec.europa.eu/technology-centre/ihp-leibniz-institute-high-performance-microelectronics", "https://www.ihp-microelectronics.com/research/technologies-for-smart-systems/clean-room", "https://www.xfab.com/news/details/article/licensing-agreement-between-x-fab-and-ihp-leibniz-institute-leads-to-innovative-130-nm-sige-bicmos-platform", "https://www.ihp-solutions.com", "https://www.ihp-microelectronics.com/about-us/cleanroom-1", "https://en.wikipedia.org/wiki/Innovations_for_High_Performance_Microelectronics"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": 130.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Foundry-services", "Photonics/Opto", "RF"], "site_id": "ihp-leibniz__frankfurt-oder", "id": "ihp-leibniz-frankfurt-oder-200mm", "year_opened": 2021, "year_first_production": null, "investment_eur_million": null, "employees": 330, "region": "Brandenburg", "last_verified": "2026-06", "owner": {"parent": "Leibniz Association (institutional coordination only)", "ultimate_owner": "State of Brandenburg (Land Brandenburg)", "owner_country_iso": "DE", "ownership_type": "state", "note": "Sole shareholder is the German federal state of Brandenburg; institutional funding from Brandenburg, German Länder, and Federal Government; commercial operations via 100% subsidiary IHP Solutions GmbH", "source": "https://www.ihp-microelectronics.com/about-us/organization", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "State-owned research pilot pioneering 130nm SiGe RF and silicon photonics, now enabling chiplet heterointegration for next-gen analog systems."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.7644, 51.1098]}, "properties": {"company": "Infineon Technologies", "fab_name": "Dresden Wafer Fab (existing 200mm + 300mm)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.1098, "lon": 13.7644, "coord_precision": "site", "product_types": ["power", "analog", "logic", "automotive microcontroller", "power MOSFET", "IGBT", "power IC", "smart power", "sensors", "security"], "wafer_size_mm": [200, 300], "process_nodes": ["200mm power/mixed-signal", "200mm smart power (BCD-type)", "300mm power/mixed-signal", "300mm thin-wafer power (CoolMOS transfer from Villach)", "300mm automotive MCU/logic", "automotive & security IC platforms"], "finest_node": "300mm power/mixed-signal (node in nm not disclosed)", "status": "operational", "category": "volume_specialty", "expected_production_year": null, "confidence": "high", "notes": "Koenigsbruecker Strasse 180; site founded 1994, >4,000 staff, 400+ products on 200mm & 300mm. Infineon's main front-end location and one of two large 300mm thin-wafer power hubs (with Villach), backbone of 'One Virtual Fab'. Existing capacity, distinct from the new Smart Power Fab under construction.", "sources": ["https://www.infineon.com/regional/dresden", "https://www.eetasia.com/infineon-opens-high-tech-chip-factory-for-power-electronics-on-300mm-wafers/", "https://eepower.com/news/infineons-300mm-thin-wafer-fab-completes-qualification-begins-production/", "https://en.wikipedia.org/wiki/Infineon_Technologies", "https://www.eetimes.com/infineon-breaks-ground-on-300-mm-fab-in-dresden/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "Logic", "MCU", "Power", "Sensors", "Smartcard/Secure"], "site_id": "infineon-technologies__dresden", "id": "infineon-technologies-dresden-300mm", "year_opened": 1995, "year_first_production": null, "investment_eur_million": null, "employees": 3250, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 40000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "the plant is expected to produce 40,000 wafers per month when complete", "source": "https://www.datacenterdynamics.com/en/news/european-commission-approves-920m-funding-package-for-new-infineon-german-chip-fab/", "year": 2024, "verified": "unreachable", "as_of": "2026-07-17"}, "summary": "Infineon's flagship power hub and foundation of its distributed 'One Virtual Fab' model; one of Europe's only two volume 300mm thin-wafer power production lines."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.756, 51.0945]}, "properties": {"company": "Infineon Technologies", "fab_name": "Smart Power Fab Dresden (300mm, MEGAFAB-DD)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.0945, "lon": 13.756, "coord_precision": "site", "product_types": ["power", "smart power", "analog", "automotive power", "industrial power", "automotive MCU"], "wafer_size_mm": [300], "process_nodes": ["300mm Smart Power (high-voltage analog/mixed-signal power)", "300mm analog/mixed-signal and power semiconductor"], "finest_node": "300mm Smart Power (node in nm not disclosed)", "status": "under_construction", "category": "volume_specialty", "expected_production_year": "2026", "confidence": "high", "notes": "New ~EUR5bn 300mm Smart Power Fab (MEGAFAB-DD), major EU Chips Act project for discrete power + analog/mixed-signal ICs. Groundbreaking May 2023; 'Ready for Equipment' Oct 2025; official opening 2 July 2026, production begins 2026. Extends Dresden campus, part of 'One Virtual Fab' with Villach. Kept separate from existing Dresden fab.", "sources": ["https://www.infineon.com/regional/dresden/smart-power-fab", "https://www.infineon.com/press-release/2025/INFXX202505-100", "https://digital-strategy.ec.europa.eu/en/news/milestone-strengthening-europes-semiconductor-manufacturing-capacity-under-chips-act-reached", "https://www.eetimes.com/infineon-breaks-ground-on-300-mm-fab-in-dresden/", "https://www.bloomberg.com/news/articles/2026-06-12/infineon-to-open-german-chip-fab-as-part-of-eu-sovereignty-push"], "country_iso": "DE", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "MCU", "Power"], "site_id": "infineon-technologies__dresden", "id": "infineon-technologies-dresden-300mm-2", "year_opened": null, "year_first_production": 2026, "investment_eur_million": 5000.0, "employees": 3250, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 920, "authority": "European Commission (DG Competition), aid granted by Germany (Federal Republic + Free State of Saxony)", "instrument": "EC state-aid approval (German direct grant, linked to EU Chips Act / IPCEI ME/CT framework)", "decision_date": "2025-02-20", "case_id": "SA.106117", "project_capex_eur_million": 3500, "source": "https://ec.europa.eu/commission/presscorner/detail/en/ip_25_557", "note": "EC approved a EUR 920 million German direct grant (case SA.106117, decided 20 Feb 2025) toward Infineon's ~EUR 3.5 billion Smart Power Fab investment in Dresden; Infineon separately describes combined EU Chips Act/IPCEI ME/CT-linked funding for the Dresden site as \"approximately EUR 1 billion.\" The input's stated capex (EUR 5,000m) is higher than the EC decision's cited EUR 3.5bn figure -- likely reflects a broader/updated total project cost across Infineon's own announcements versus the EC filing.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://silicon-saxony.de/en/european-commission-commission-approves-german-aid-of-e920-million-for-the-construction-of-a-new-semiconductor-plant-by-infineon/", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "Flagship EUR 5 billion EU Chips Act foundry for automotive and industrial power semiconductors; opens July 2026 as Europe's largest new fab investment."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [12.1016, 49.0134]}, "properties": {"company": "Infineon Technologies", "fab_name": "Regensburg Wafer Fab (150/200mm power & sensor)", "site_city": "Regensburg", "country": "Germany", "in_eu": true, "lat": 49.0134, "lon": 12.1016, "coord_precision": "site", "product_types": ["power", "sensors", "analog", "discretes", "automotive microcontroller", "smart power IC", "mixed-signal"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm mature-node power/mixed-signal", "200mm mature-node sensor/automotive", "200mm power semiconductor", "power discrete / sensor platforms"], "finest_node": "200mm mature-node sensor/power (node in nm not disclosed)", "status": "operational", "category": "volume_specialty", "expected_production_year": null, "confidence": "medium", "notes": "Wernerwerkstr. 2, 93049 Regensburg. Long-standing 150/200mm front-end power/sensor fab; Infineon's main sensor fab plus mature-node automotive/power mixed-signal. Some lines (e.g. SPT5) transferring to Kulim. No 300mm here; large back-end on campus excluded.", "sources": ["https://www.infineon.com/regional/regensburg/about", "https://www.infineon.com/careers/our-locations", "https://www.farnell.com/datasheets/3698022.pdf", "https://en.wikipedia.org/wiki/Infineon_Technologies"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "MCU", "Power", "Sensors"], "site_id": "infineon-technologies__regensburg", "id": "infineon-technologies-regensburg-200mm", "year_opened": 2000, "year_first_production": null, "investment_eur_million": null, "employees": 3400, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "DE", "ownership_type": "public", "note": "German AG listed on Frankfurt Stock Exchange; ~99.9% free float with no controlling shareholder; largest holder BlackRock with 6.83% (as of March 2025); spun off from Siemens in 1999-2000 but Siemens no longer significant shareholder", "source": "https://de.wikipedia.org/wiki/Infineon", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Infineon's main sensor manufacturing hub and mature-node power/automotive mixed-signal centre, Regensburg anchors the company's specialty analog business across mature process nodes."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.6276, 52.1205]}, "properties": {"company": "Intel", "fab_name": "Magdeburg Megafab (Silicon Junction)", "site_city": "Magdeburg", "country": "Germany", "in_eu": true, "lat": 52.1205, "lon": 11.6276, "coord_precision": "city", "product_types": ["logic", "foundry"], "wafer_size_mm": [300], "process_nodes": ["Intel 18A-class", "Intel 20A-class", "Intel 14A-era (planned)"], "finest_node": "Intel 18A-class (angstrom era, planned, never built)", "status": "cancelled", "expected_production_year": null, "category": "volume_logic", "confidence": "high", "notes": "Announced March 2022 (>EUR30B, two first-of-their-kind 300mm leading-edge logic fabs at Eulenberg site, Saxony-Anhalt). Land acquired but full construction never started; postponed 2024, formally cancelled July 2025 by CEO Lip-Bu Tan; German subsidies withdrawn. No wafers ever produced.", "sources": ["https://www.it-daily.net/shortnews-en/intel-officially-cancels-construction-of-chip-factory-in-magdeburg-germany", "https://brusselssignal.eu/2025/07/intel-cancels-multi-billion-euro-chip-factory-in-germany/", "https://www.intc.com/news-events/press-releases/detail/1628/intel-german-government-agree-on-increased-scope-for-wafer", "https://www.eetimes.com/intel-retreat-shifts-europe-semiconductor-reality/", "https://www.zew.de/en/press/latest-press-releases/intels-plans-cancelled-just-in-time", "https://www.reuters.com/technology/berlin-sign-agreement-with-intel-after-chip-plant-talks-2023-06-19/"], "country_iso": "DE", "status_group": "dead", "finest_node_nm": 1.8, "max_wafer_mm": 300, "tags": ["Foundry-services", "Logic", "Photonics/Opto"], "site_id": "intel__magdeburg", "id": "intel-magdeburg-300mm", "year_opened": null, "year_first_production": null, "investment_eur_million": 30000.0, "employees": null, "region": "Saxony-Anhalt", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "US", "ownership_type": "public", "note": "U.S. public corporation listed on NASDAQ (INTC); dispersed ownership with largest institutional holders being Vanguard (~9.2%), BlackRock (~8.5%), and State Street (~4.5%); U.S. government holds ~9.9% passive stake (non-controlling) via 2025 investment agreement plus 5-year warrant option", "source": "https://newsroom.intel.com/corporate/intel-and-trump-administration-reach-historic-agreement", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Canceled megafab project (announced 2022, cancelled July 2025) that demonstrated the challenges of state-backed European foundry expansion without securing long-term demand."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.9288, 53.5663]}, "properties": {"company": "Nexperia", "fab_name": "Nexperia Hamburg wafer fab", "site_city": "Hamburg", "country": "Germany", "in_eu": true, "lat": 53.5663, "lon": 9.9288, "coord_precision": "site", "product_types": ["power", "discretes", "diodes", "bipolar transistors", "small-signal", "ESD protection", "logic", "SiC", "GaN"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm bipolar/diode/small-signal discrete", "200mm silicon power discrete", "200mm SiC diode/MOSFET", "200mm GaN D-mode HEMT"], "finest_node": "200mm wide-bandgap (SiC/GaN) power process; specific micron geometry not publicly disclosed", "status": "expanding", "expected_production_year": "2024", "category": "volume_specialty", "confidence": "high", "notes": "Nexperia's main European front-end fab (Stresemannallee 101, since 1953); world's largest fab for bipolar small-signal + power discretes, >1M wafers/yr on 6\"+8\". June 2024 ~$200M/EUR184M WBG investment: SiC diode & GaN D-mode lines started Jun 2024; 200mm SiC MOSFET/GaN HEMT + Si 200mm conversion building out 2024-26. ~1,600 staff.", "sources": ["https://www.nexperia.com/about/news-events/press-releases/Nexperia-to-Invest-200-Million-USD-in-Hamburg", "https://www.semiconductor-today.com/news_items/2024/jun/nexperia-270624.shtml", "https://compoundsemiconductor.net/article/120130/Nexperia_Expanding_GaN_and_SiC_operations", "https://www.nexperia.com/about/worldwide-locations/manufacturing", "https://bits-chips.com/article/nexperia-channels-e182m-into-hamburg-fab/", "https://procurementpro.com/nexperia-to-invest-200-million-in-hamburg/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Discrete", "GaN", "Logic", "Power", "RF", "SiC"], "site_id": "nexperia__hamburg", "id": "nexperia-hamburg-200mm-sic", "year_opened": 2024, "year_first_production": null, "investment_eur_million": 184.0, "employees": 1600, "region": "Hamburg", "last_verified": "2026-06", "owner": {"parent": "Wingtech Technology Co., Ltd. (Shanghai-listed, SHSE:600745) — legal/equity owner of Nexperia B.V.; however, voting and governance rights over Wingtech's Nexperia shares have been suspended and placed under independent Dutch court-appointed trustees since Sept/Oct 2025", "ultimate_owner": "Wingtech Technology Co., Ltd.", "owner_country_iso": "CN", "ownership_type": "public", "note": "Wingtech Technology (CN) parent; Dutch government invoked the Goods Availability Act (autumn 2025, order public October 2025) placing Nexperia under control measures — ownership vs. operational control currently diverge", "source": "https://www.reuters.com/world/china/netherlands-looks-move-past-nexperia-dispute-with-china-dutch-minister-says-2026-07-07/", "confidence": "medium", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/retail-consumer/dutch-court-orders-investigation-into-nexperia-upholds-previous-decisions-2026-02-11/"}, "capacity": {"value": 1000000, "unit": "wafers_per_year", "provenance": "disclosed", "quote": "The Hamburg fab now produces more than 1 million wafers per year on 8\" and 6\".", "source": "https://www.nexperia.com/about/worldwide-locations/manufacturing", "year": 2024, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "World's largest power-discrete fab on 6\"+8\", now investing 184M-EUR in 200mm SiC/GaN lines; strategically vital asset for Europe, subject to Dutch ownership oversight as of late 2025."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.6889, 51.1444]}, "properties": {"company": "Robert Bosch", "fab_name": "Dresden Wafer Fab (300mm)", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.1444, "lon": 13.6889, "coord_precision": "site", "product_types": ["automotive ICs", "power", "power MOSFETs", "logic", "mixed-signal", "MEMS"], "wafer_size_mm": [300], "process_nodes": ["65nm", "300mm CMOS for automotive ICs", "300mm power MOSFET"], "finest_node": "65nm", "status": "expanding", "expected_production_year": "2027", "category": "volume_specialty", "confidence": "medium", "notes": "Bosch's ~EUR 1bn 300mm flagship ('factory of the future', AIoT) in Dresden-Klotzsche (Silicon Saxony); wholly owned. Opened June 2021, power semiconductors in series since Jul 2021; automotive ICs from 2023; MEMS-on-300mm listed starting 2027. The 65nm node is industry/Wikipedia-reported, not officially confirmed by Bosch.", "sources": ["https://www.bosch-semiconductors.com/about-us/where-we-produce/dresden/", "https://www.bosch.com/stories/factory-of-the-future-wafer-fab-dresden/", "https://www.bosch.com/stories/semiconductor-manufacturing/", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://www.irel40.eu/robert-bosch-semiconductor-manufacturing-dresden-gmbh", "https://business-saxony.com/en/bosch-mega-fab-in-dresden"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 65.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "Logic", "MEMS", "Power"], "site_id": "robert-bosch__dresden", "id": "robert-bosch-dresden-300mm", "year_opened": 2021, "year_first_production": null, "investment_eur_million": 1000.0, "employees": 450, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "Robert Bosch Stiftung GmbH (~94% of capital) and Robert Bosch Industrietreuhand KG (~93% of voting rights; no equity but exercises control)", "ultimate_owner": "Bosch Stiftung (owner) / Industrietreuhand KG (control)", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Complex dual-structure established 1964 per founder's testament; intentionally separates capital (foundation) from control (industrial trust) to preserve independence and prevent takeover; Foundation owns ~94% of equity and receives dividends but has no voting control; RBIT (populated by Bosch family, management, external figures) holds ~93% of voting rights and exercises strategic governance; Bosch family holds ~7% voting rights via ERBO II GmbH and family entities; foundati", "source": "https://www.bosch.com/company/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 140, "authority": "German Federal Ministry for Economic Affairs (BMWi/BMWK), under EU State Aid framework", "instrument": "IPCEI Microelectronics (national grant disbursed under EC-approved IPCEI ME state-aid umbrella)", "decision_date": "EC approval of the IPCEI Microelectronics framework: end of 2018 (exact day/month not stated in available BMWi sources); Bosch's national grant was publicly confirmed at the Dresden fab's opening on 7 June 2021", "case_id": "SA.46578", "project_capex_eur_million": 1000, "source": "https://www.bundeswirtschaftsministerium.de/Redaktion/DE/Publikationen/Technologie/20210604-infopapier-ipcei-mikroelektronik-halbleiterfrabrik-in-dresden-eroeffnet.pdf?__blob=publicationFile&v=4", "note": "Bosch's ~1bn EUR, 300mm Dresden wafer fab (opened June 2021) received ~EUR 140 million in German federal (BMWi) funding under the first IPCEI Microelectronics project, covered by EC state-aid case SA.46578 (approved end-2018, multi-country/multi-beneficiary umbrella decision — no Bosch-specific sub-decision date found). Some press (Oiger, Deutschlandfunk) mention federal support potentially rising to up to EUR 200 million, but EUR 140 million is the figure explicitly confirmed by BMWi/BMWK official documents. Do NOT confuse this with the separate, much larger ESMC (TSMC/Bosch/Infineon/NXP joint-venture) Dresden fab, which received EC-approved EU Chips Act state aid of up to EUR 5 billion under case SA.101171 (approved 20 August 2024) — that is a distinct project from Bosch's standalone 300mm fab covered here.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://silicon-saxony.de/bmwi-bundeswirtschaftsministerium-foerdert-chipfabrik-von-bosch-mit-140-mio-euro/", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Bosch's billion-euro flagship opened 2021; produces automotive power ICs and MOSFETs, with MEMS capability launching 2027 under a fully integrated fab model."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.2008, 48.5108]}, "properties": {"company": "Robert Bosch", "fab_name": "Reutlingen Wafer Fab (150mm/200mm)", "site_city": "Reutlingen", "country": "Germany", "in_eu": true, "lat": 48.5108, "lon": 9.2008, "coord_precision": "site", "product_types": ["automotive ICs", "automotive ASIC", "automotive MCU", "MEMS", "power", "power MOSFETs", "SiC", "analog", "sensors", "image sensors"], "wafer_size_mm": [150, 200], "process_nodes": ["180nm", "200mm silicon power MOSFET", "150mm SiC trench MOSFET", "200mm SiC power MOSFET", "MEMS"], "finest_node": "180nm", "status": "expanding", "expected_production_year": "2026", "category": "volume_specialty", "confidence": "high", "notes": "Bosch's historic semiconductor hub (production since 1970; 150mm from 1995, 200mm from 2010), near Stuttgart; wholly owned. Transformed into a pure 200mm fab. 150mm SiC mass production since 2021; first 200mm SiC wafers from 2026, 3rd-gen SiC series 2027. >EUR 250M cleanroom expansion (35,000 to >44,000 m2, construction from 2022) completing end-2025.", "sources": ["https://www.bosch-semiconductors.com/about-us/where-we-produce/reutlingen/", "https://www.bosch.com/stories/semiconductor-manufacturing/", "https://www.bosch-mobility.com/en/company/current-news/more-chips-bosch-to-invest-on-extending-semiconductor-production/", "https://www.eenewseurope.com/en/bosch-to-expand-semiconductor-fab-in-reutlingen-again/", "https://www.powerelectronicsnews.com/bosch-doubles-down-on-sic-at-pcim-2025-underscoring-its-leadership-ambitions/", "https://www.bosch-mobility.com/en/company/current-news/rising-demand-for-sic-chips/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Foundry-services", "MCU", "MEMS", "Power", "Sensors", "SiC"], "site_id": "robert-bosch__reutlingen", "id": "robert-bosch-reutlingen-200mm-sic", "year_opened": 2021, "year_first_production": 2026, "investment_eur_million": 250.0, "employees": 8000, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "Robert Bosch Stiftung GmbH (~94% of capital) and Robert Bosch Industrietreuhand KG (~93% of voting rights; no equity but exercises control)", "ultimate_owner": "Bosch Stiftung (owner) / Industrietreuhand KG (control)", "owner_country_iso": "DE", "ownership_type": "foundation", "note": "Complex dual-structure established 1964 per founder's testament; intentionally separates capital (foundation) from control (industrial trust) to preserve independence and prevent takeover; Foundation owns ~94% of equity and receives dividends but has no voting control; RBIT (populated by Bosch family, management, external figures) holds ~93% of voting rights and exercises strategic governance; Bosch family holds ~7% voting rights via ERBO II GmbH and family entities; foundati", "source": "https://www.bosch.com/company/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": null, "authority": "European Commission (state aid) / German Federal Ministry for Economic Affairs and Climate Action (BMWK)", "instrument": "IPCEI ME/CT (Important Project of Common European Interest on Microelectronics and Communication Technologies) participation", "decision_date": "2023-06-08", "case_id": "SA.101083", "project_capex_eur_million": 250, "note": "Bosch's Reutlingen fab is officially listed by BMWK as one of the German project sites covered by the EC-approved IPCEI ME/CT state-aid scheme (case SA.101083, approved 2023-06-08, total envelope up to EUR8.1bn across 56 companies/14 member states), and Bosch states its ~EUR3bn Dresden+Reutlingen semiconductor investment through 2026 runs under this IPCEI framework. However, no site- or company-specific approved aid amount for Reutlingen/the 200mm SiC line has been publicly disclosed by the Commission, BMWK, or Bosch (only aggregate IPCEI totals are public); the sole concretely documented Bosch IPCEI-microelectronics grant, EUR140m, was for the separate Dresden 300mm fab under the earlier 2018 IPCEI ME wave. Reported project capex (EUR250m) reflects Bosch's announced Reutlingen semiconductor/SiC expansion investment through 2025, not a subsidy figure.", "verified": "confirmed", "as_of": "2026-07-17", "source_note": "BMWK official IPCEI ME/CT project list (bundeswirtschaftsministerium.de/.../mikroelektr...", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Germany's automotive semiconductor heartland transforming into pure 200mm production, adding mass SiC power output from 2026 for electric vehicles."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.1303, 49.4869]}, "properties": {"company": "SiCrystal (ROHM)", "fab_name": "SiCrystal Nuremberg (Nordostpark) SiC substrate plant", "site_city": "Nuremberg", "country": "Germany", "in_eu": true, "lat": 49.4869, "lon": 11.1303, "coord_precision": "site", "product_types": ["SiC", "power", "SiC monocrystalline substrates"], "wafer_size_mm": [150], "process_nodes": ["150mm 4H-SiC monocrystalline substrate (PVT crystal growth)"], "finest_node": "150mm 4H-SiC single-crystal substrate wafers", "status": "expanding", "expected_production_year": "2027", "category": "substrate_epi", "confidence": "medium", "notes": "Wholly owned ROHM subsidiary; leading single-crystal 4H-SiC substrate maker. Nordostpark, Nuremberg. Supplies 150mm SiC substrates to STMicroelectronics. New building opposite existing site to ~triple capacity by ~2027.", "sources": ["https://www.eenewseurope.com/en/sicrystal-to-triple-sic-wafer-production-in-europe/", "https://www.semiconductor-today.com/news_items/2024/jul/sicrystal-080724.shtml", "https://newsroom.st.com/media-center/press-item.html/c3252.html", "https://www.rohm.com/news-detail?news-title=2022-04-14_news_sicrystal25&defaultGroupId=false", "https://sicrystal.de/index.php/en/history-en"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "sicrystal-rohm__nuremberg", "id": "sicrystal-rohm-nuremberg-150mm-sic", "year_opened": 1997, "year_first_production": 2027, "investment_eur_million": 65.0, "employees": 200, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "ROHM Co., Ltd.", "owner_country_iso": "JP", "ownership_type": "public", "note": "100% wholly owned subsidiary of ROHM Co., Ltd. (Japanese semiconductor group). ROHM shares successive takeover completed in 2010; relocated to Nuremberg as ROHM's European SiC substrate manufacturing arm. ROHM Co., Ltd. is publicly listed on Tokyo Stock Exchange (ticker 6963) with ~51.5% institutional, 48.5% public float, including 14.35% Master Trust Bank of Japan and 10.76% Rohm Music Foundation.", "source": "https://sicrystal.de/index.php/en/history-en", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.rohm.com/news-detail?news-title=2022-04-14_news_sicrystal25&defaultGroupId=false"}, "summary": "Europe's leading 4H-SiC substrate specialist and ROHM subsidiary; expanding capacity to become critical supplier for the wave of SiC power-device manufacturing."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [12.8303, 48.1583]}, "properties": {"company": "Siltronic", "fab_name": "Burghausen (crystal pulling + 300mm wafer fab, global tech/R&D center)", "site_city": "Burghausen", "country": "Germany", "in_eu": true, "lat": 48.1583, "lon": 12.8303, "coord_precision": "site", "product_types": ["silicon wafers", "polished silicon wafers", "epitaxial silicon wafers", "monocrystal ingots"], "wafer_size_mm": [200, 300], "process_nodes": ["300mm polished silicon wafer", "300mm epitaxial silicon wafer", "200mm hyperpure silicon ingot/wafer"], "finest_node": "300mm polished and epitaxial silicon wafer (substrate, no CMOS node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Founding site in SE Bavaria on the Wacker Chemie complex; monocrystals pulled plus wafers up to 300mm; houses global technology/R&D center. Small-diameter (<=150mm) production ceased ~2025; 200mm/300mm continue.", "sources": ["https://www.siltronic.com/en/our-company/sites.html", "https://www.siltronic.com/en/press/press-releases/siltronic-ends-wafer-production-for-small-diameters.html", "https://en.wikipedia.org/wiki/Siltronic", "https://www.siltronic.com/en/our-company/history.html"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Photonics/Opto", "Substrate/epi"], "site_id": "siltronic__burghausen", "id": "siltronic-burghausen-300mm", "year_opened": 1998, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Wacker Chemie AG (largest shareholder); dispersed public float", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on SDAX/TecDAX; Wacker Chemie AG reduced stake to ~24% via placement on May 26, 2026, but remains largest single shareholder; no controlling stake; ownership also includes HAL Investments (~15.1%), Sino-American Silicon Products (~13.67%), and institutional/retail free float (~40.4%). No single entity has >50% control.", "source": "https://www.wacker.com/cms/en-us/press-and-media/press/press-releases/2026/press-releases-detail-2026-313729.html", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.siltronic.com/en/investors.html"}, "capacity": {"value": 75000, "unit": "wafers_per_month_300mm", "provenance": "disclosed", "quote": "roughly 75,000 wafers per month presently being produced", "source": "https://www.siltronic.com/en/press/press-releases/siltronic-opens-new-300-mm-plant-in-freiberg.html", "year": 2005, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Birthplace of German semiconductor manufacturing; houses global silicon-substrate technology center and evolves from small-wafer to 300mm focus."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.358, 50.917]}, "properties": {"company": "Siltronic", "fab_name": "Freiberg 300mm fab (Carl-Schiffner-Strasse 29)", "site_city": "Freiberg", "country": "Germany", "in_eu": true, "lat": 50.917, "lon": 13.358, "coord_precision": "site", "product_types": ["silicon wafers", "polished silicon wafers", "epitaxial silicon wafers", "monocrystal ingots"], "wafer_size_mm": [300], "process_nodes": ["300mm polished silicon wafer", "300mm epitaxial silicon wafer", "300mm monocrystal pulling"], "finest_node": "300mm leading-edge polished and epitaxial silicon wafer (substrate, no CMOS node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "medium", "notes": "Dedicated 300mm fab in Saxony (former VEB Spurenmetalle, acquired 1995); new 300mm plant opened 2004. EIB EUR200m loan (2022) funds modernization plus next-gen hyperpure wafer/ingot R&D. Major greenfield FabNext is in Singapore (out of scope).", "sources": ["https://www.siltronic.com/en/press/press-releases/siltronic-opens-new-300-mm-plant-in-freiberg.html", "https://www.siltronic.com/en/our-company/sites.html", "https://www.eib.org/en/press/all/2022-409-eib-supports-development-of-siltronic-s-next-generation-of-silicon-wafers", "https://en.wikipedia.org/wiki/Siltronic", "https://www.siltronic.com/en/our-company/history.html", "https://www.siltronic.com/fileadmin/documents/2023/Siltronic_Imagebrosch%C3%BCre_eng_FINAL.pdf"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Substrate/epi"], "site_id": "siltronic__freiberg", "id": "siltronic-freiberg-300mm", "year_opened": 2004, "year_first_production": null, "investment_eur_million": 200.0, "employees": 1000, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Wacker Chemie AG (largest shareholder); dispersed public float", "owner_country_iso": "MULTI", "ownership_type": "public", "note": "Listed on SDAX/TecDAX; Wacker Chemie AG reduced stake to ~24% via placement on May 26, 2026, but remains largest single shareholder; no controlling stake; ownership also includes HAL Investments (~15.1%), Sino-American Silicon Products (~13.67%), and institutional/retail free float (~40.4%). No single entity has >50% control.", "source": "https://www.wacker.com/cms/en-us/press-and-media/press/press-releases/2026/press-releases-detail-2026-313729.html", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.siltronic.com/en/investors.html"}, "subsidy": {"amount_eur_million": 121, "authority": "European Commission (DG Competition)", "instrument": "EC state-aid approval — regional investment aid under the 1998 Multisectoral Framework for large investment projects (German \"Gemeinschaftsaufgabe\" regional investment grant + Investitionszulage tax allowance), notified by Germany/Saxony", "decision_date": "2004-02-18", "case_id": "N 309/2003 (pre-2010 numbering; Commission decision C(2004) 345 final)", "project_capex_eur_million": 436.3, "source": "https://ec.europa.eu/competition/state_aid/cases/136447/136447_467882_64_2.pdf", "note": "Beneficiary of record was \"Wacker Siltronic AG, Burghausen\" (100% Wacker-Chemie subsidiary at the time; Siltronic AG later spun off from Wacker in 2015 — same legal entity/fab lineage). Case approved aid intensity of up to 28% gross on eligible investment costs of EUR 431.8m (total project cost EUR 436.3m) for construction of the new 300mm wafer fab in Freiberg, i.e. ~EUR 120.9m (\"knapp 121 Mio. EUR\" per Heise) — this is the primary/original state-aid record for the Freiberg 300mm fab itself, not a specific EUR200m figure. Note: a separate, later EUR200m EIB loan (signed 19 Sep 2022, EIB press release https://www.eib.org/en/press/all/2022-409-eib-supports-development-of-siltronic-s-next-generation-of-silicon-wafers) financed R&D and modernization/expansion of Freiberg wafer production (total project cost ~EUR452m per EIB pipeline) — this is EIB project financing, NOT an EC state-aid decision, and may be what the dataset's EUR200m capex figure reflects; no EC state-aid case number was found tied to that later EUR200m-scale expansion specifically. No IPCEI ME/CT participation or EU Chips Act direct grant found for Siltronic Freiberg in either period.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.heise.de/news/EU-billigt-Millionen-Beihilfe-fuer-neues-Siltronic-Werk-in-Freiberg-93711.html", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "capacity": {"value": 125000, "unit": "wafers_per_month_300mm", "provenance": "disclosed", "quote": "Siltronic is predicted to be capable of turning out 125,000 wafers per month of 300 mm diameter product in the current year", "source": "https://www.siltronic.com/en/press/press-releases/siltronic-opens-new-300-mm-plant-in-freiberg.html", "year": 2005, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Siltronic's newest 300mm ultra-pure silicon wafer fab (opened 2004, recently modernized with EIB funding) supplies the hyperscale chip ecosystem across the continent."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [7.8367, 47.9923]}, "properties": {"company": "TDK-Micronas", "fab_name": "Freiburg Wafer Fab", "site_city": "Freiburg im Breisgau", "country": "Germany", "in_eu": true, "lat": 47.9923, "lon": 7.8367, "coord_precision": "site", "product_types": ["Hall-effect sensors", "magnetic sensors", "mixed-signal ICs", "automotive sensor ICs", "embedded motor-control ICs"], "wafer_size_mm": [200], "process_nodes": ["mature planar mixed-signal CMOS (node not publicly disclosed; ~0.35um-class inferred)"], "finest_node": "~0.35um-class mixed-signal CMOS (not publicly node-labeled; X-FAB partnership covers 0.18um HV-CMOS externally, no public confirmation Freiburg runs it)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "low", "notes": "Sole TDK-Micronas European front-end fab; fully integrated (wafer fab + assembly + final test) for magnetic-field CMOS Hall/HAL-HAR sensors and mixed-signal ICs. Wafer size and node not publicly disclosed (low-confidence inference). Also uses X-FAB as external foundry.", "sources": ["https://www.infsoft.com/tdk-success-story/", "https://www.micronas.tdk.com/en/company", "https://www.micronas.tdk.com/en/jobportal/Operator-Waferfab-mfd-3154-hrsweek-Konti-Synchro-early-shi-eng-j935.html", "https://www.micronas.tdk.com/en/news-events/ad-hoc-news/x-fab-and-micronas-join-strategic-partnership-pr1108", "https://de.linkedin.com/company/tdk-micronas", "https://www.eenewseurope.com/en/tdk-to-close-scottish-sensor-factory/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 350.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Foundry-services", "Photonics/Opto", "Sensors"], "site_id": "tdk-micronas__freiburg-im-breisgau", "id": "tdk-micronas-freiburg-im-brei-200mm", "year_opened": 1960, "year_first_production": null, "investment_eur_million": null, "employees": 1000, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "TDK-Micronas GmbH (Freiburg im Breisgau, Germany)", "ultimate_owner": "TDK Corporation", "owner_country_iso": "JP", "ownership_type": "public", "note": "TDK Corporation (Tokyo Stock Exchange listed, publicly traded, no single controlling shareholder) acquired Micronas Semiconductor Holding AG in full in March 2016; the entity was renamed TDK-Micronas GmbH in 2017. No JV, PE/sovereign-fund involvement, state ownership, insolvency, or ownership-chain restructuring identified for 2024-2026. The Freiburg fab did receive German federal IPCEI (Important Projects of Common European Interest) subsidy support for its 150mm-to-200mm wafer conversion (per BMWK project sheet, 2021-ongoing) -- this is state co-funding of capex/modernization, not a state equity stake or control order. 2024 sustainability report describes ongoing equipment consolidation/modernization at Freiburg (6-inch decommissioning, 8-inch consolidation) but no closure, sale, or change-of-control. No JV percentage splits apply -- TDK Corporation holds 100% of TDK-Micronas GmbH.", "source": "https://www.micronas.tdk.com/en/company", "confidence": "high", "verified": "unreachable", "as_of": "2026-07-17", "source2": "https://www.tdk.com/system/files/factory_tours_and_business_strategy_meeting_2024_20241127_en.pdf"}, "summary": "Europe's leading vertical Hall-sensor specialist, fully integrated from wafer to test; serves automotive magnetic-sensing and motor-control markets from one southern-German site."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.1829, 48.7758]}, "properties": {"company": "TRUMPF Photonic Components", "fab_name": "Q.ANT Thin-Film Lithium Niobate Photonic Pilot Line (at IMS CHIPS)", "site_city": "Stuttgart", "country": "Germany", "in_eu": true, "lat": 48.7758, "lon": 9.1829, "coord_precision": "city", "product_types": ["photonics", "photonic AI processors", "thin-film lithium niobate (TFLN) photonic chips"], "wafer_size_mm": [200], "process_nodes": ["thin-film lithium niobate (TFLN) on refurbished CMOS infrastructure"], "finest_node": "TFLN photonic process (no nm node; photonic, not CMOS-node-defined)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "medium", "notes": "Q.ANT (wholly owned TRUMPF subsidiary) operates its own TFLN photonic pilot line in Stuttgart at IMS CHIPS (not in Ulm), reusing existing CMOS fab infrastructure with Q.ANT lithium-niobate processes; ~1000 wafer starts/year, in operation 2024-2025. Wafer size inferred from CMOS-line reuse (200mm typical at IMS CHIPS; not officially confirmed).", "sources": ["https://qant.com/about-us/", "https://www.trumpf.com/en_INT/newsroom/global-press-releases/press-release-detail-page/release/trumpf-ups-investment-in-quantum-start-up-qant/", "https://www.linkedin.com/company/qant", "https://www.youtube.com/watch?v=Rt7Neco0B60", "https://www.trumpf.com/en_IN/newsroom/global-press-releases/press-release-detail-page/release/trumpf-photonic-components-shipped-its-two-billionth-product/"], "country_iso": "DE", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Photonics/Opto"], "site_id": "trumpf-photonic-components__stuttgart", "id": "trumpf-photonic-componen-stuttgart-200mm", "year_opened": 2024, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "TRUMPF SE + Co. KG (historical, until April 2026 divestment)", "ultimate_owner": "Unknown (post-divestment April 2026)", "owner_country_iso": "unknown", "ownership_type": "unknown", "note": "Prior to April 2026, owned by TRUMPF SE + Co. KG (Leibinger family 90%, Berthold Leibinger Stiftung 10%; private family-owned). Business unit divested in parts April 2026 to unnamed US and Taiwanese buyers; post-sale legal entity names and ownership structure not publicly documented in available sources. Likely fragmented ownership across multiple acquirers.", "source": "https://www.gleisslutz.com/en/mandates-firm-news/gleiss-lutz-advises-trumpf-sale-its-photonic-components-business-unit", "confidence": "low", "verified": null, "as_of": "2026-07-17", "source2": "https://www.mainsights.io/ma-news/us-acquirer-buys-photonic-components-business-from-german-tech-company-trumpf"}, "summary": "Photonic-processor pilot line using lithium-niobate thin-film on refurbished CMOS infrastructure; fragmented ownership post-April 2026 divestment, unclear future."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.9568, 48.4232]}, "properties": {"company": "TRUMPF Photonic Components", "fab_name": "Ulm VCSEL & Photodiode Cleanroom (TRUMPF Photonic Components HQ)", "site_city": "Ulm", "country": "Germany", "in_eu": true, "lat": 48.4232, "lon": 9.9568, "coord_precision": "site", "product_types": ["VCSELs", "photodiodes", "GaAs III-V opto", "InP SWIR VCSEL", "3D sensing", "LiDAR", "datacom", "automotive sensing", "photonics", "photonic quantum computing (Q.ANT)"], "wafer_size_mm": [150], "process_nodes": ["GaAs/AlGaAs VCSEL epitaxy (MOCVD)", "InP SWIR VCSEL", "compound-semiconductor photodiode process"], "finest_node": "GaAs/InP III-V VCSEL process (feature size not publicly disclosed)", "status": "expanding", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Ex-Philips Photonics (est. 2000 as ULM Photonics), acquired by TRUMPF Apr 2019; largest VCSEL fab in Europe and Apple proximity-sensor supplier (shipped >2bn parts). >EUR40m invested since 2019, incl. ~750sqm 2023 cleanroom expansion; line also being expanded to fabricate Q.ANT photonic quantum chips. 150mm GaAs is industry-standard but wafer size not vendor-disclosed.", "sources": ["https://www.semiconductor-today.com/news_items/2023/may/trumpf-170523.shtml", "https://www.trumpf.com/en_IN/newsroom/global-press-releases/press-release-detail-page/release/trumpf-photonic-components-shipped-its-two-billionth-product/", "https://www.trumpf.com/en_US/newsroom/global-press-releases/press-release-detail-page/release/trumpf-completes-acquisition-of-philips-photonics", "https://www.trumpf.com/en_US/company/profile/locations/site/ulm/", "https://ipcei-me-ct.eu/partners/trumpf-photonic-components-gmbh-2/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Automotive", "Photonics/Opto", "Power", "Sensors", "Substrate/epi"], "site_id": "trumpf-photonic-components__ulm", "id": "trumpf-photonic-componen-ulm-150mm-inp", "year_opened": 2019, "year_first_production": null, "investment_eur_million": 40.0, "employees": null, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "TRUMPF SE + Co. KG (historical, until April 2026 divestment)", "ultimate_owner": "Unknown (post-divestment April 2026)", "owner_country_iso": "unknown", "ownership_type": "unknown", "note": "Prior to April 2026, owned by TRUMPF SE + Co. KG (Leibinger family 90%, Berthold Leibinger Stiftung 10%; private family-owned). Business unit divested in parts April 2026 to unnamed US and Taiwanese buyers; post-sale legal entity names and ownership structure not publicly documented in available sources. Likely fragmented ownership across multiple acquirers.", "source": "https://www.gleisslutz.com/en/mandates-firm-news/gleiss-lutz-advises-trumpf-sale-its-photonic-components-business-unit", "confidence": "low", "verified": null, "as_of": "2026-07-17", "source2": "https://www.mainsights.io/ma-news/us-acquirer-buys-photonic-components-business-from-german-tech-company-trumpf"}, "summary": "Europe's largest VCSEL fab and Apple supplier (>2 billion devices shipped); expanding cleanroom for quantum-chip production via Q.ANT partnership."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.747, 48.402]}, "properties": {"company": "Texas Instruments", "fab_name": "Freising wafer fab (TI Deutschland)", "site_city": "Freising", "country": "Germany", "in_eu": true, "lat": 48.402, "lon": 11.747, "coord_precision": "site", "product_types": ["analog", "power", "signal chain", "mixed-signal"], "wafer_size_mm": [200], "process_nodes": ["~1000nm (1 micron-class)", "0.5um", "0.35um", "180nm (legacy analog/BCD, not officially confirmed)"], "finest_node": "180nm (estimated; TI does not disclose Freising node officially)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "medium", "notes": "TI's only European front-end fab. Wafer fab since 1976, upgraded 150mm->200mm in 2000. Analog (power mgmt, signal chain) for auto/industrial. Co-located Kilby Labs R&D. Exact nodes not TI-disclosed.", "sources": ["https://www.ti.com/about-ti/company/ti-at-a-glance/manufacturing.html", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://community.element14.com/members-area/b/blog/posts/texas-instruments-in-germany", "https://www.bayern-innovativ.de/en/competencies-bavarian-chips-alliance/texas-instruments-deutschland-gmbh/", "https://careers.ti.com/about-ti-emea/", "https://www.instagram.com/p/C0BdFrANZpV/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Power"], "site_id": "texas-instruments__freising", "id": "texas-instruments-freising-200mm", "year_opened": 1976, "year_first_production": null, "investment_eur_million": null, "employees": 1500, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": "None", "ultimate_owner": "Dispersed public shareholders", "owner_country_iso": "US", "ownership_type": "public", "note": "Delaware corporation; NASDAQ listed (ticker TXN); largest institutional holders include Vanguard Group (~10-10.5%), BlackRock (~8.9-9.2%), State Street Global Advisors (~4.6-4.8%); no controlling shareholder; top 25 shareholders hold ~50% collectively, remainder in retail/free float.", "source": "https://www.investing.com/equities/texas-instru-ownership", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://investor.ti.com/static-files/fc9d9346-cf77-40db-902a-e9961e9c5736"}, "summary": "TI's sole European front-end fab since 1976, anchoring global supply of mature-node analog and power management for auto and industrial."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.9876, 48.3705]}, "properties": {"company": "United Monolithic Semiconductors (UMS)", "fab_name": "UMS Ulm GaAs/GaN-on-SiC MMIC Fab", "site_city": "Ulm", "country": "Germany", "in_eu": true, "lat": 48.3705, "lon": 9.9876, "coord_precision": "city", "product_types": ["RF/MMIC", "GaAs", "GaN", "RF power amplifiers", "low-noise amplifiers", "mm-wave"], "wafer_size_mm": [100], "process_nodes": ["GaAs pHEMT PH25 (0.25um)", "GaAs pHEMT PH15 (0.15um)", "GaAs pHEMT PH10 (0.1um)", "GaN-on-SiC HEMT GH50 (0.5um)", "GaN-on-SiC HEMT GH25 (0.25um)", "GaN-on-SiC HEMT GH15 (0.15um)"], "finest_node": "0.1um GaAs pHEMT (PH10); 0.15um GaN-on-SiC HEMT (GH15)", "status": "operational", "category": "compound_semi", "confidence": "high", "expected_production_year": null, "notes": "UMS front-end GaAs & GaN-on-SiC MMIC wafer fab; open foundry. JV origin Thales/Airbus. III-V industrial lines in Germany (Ulm).", "sources": ["https://www.ums-rf.com/foundry-services-3/", "https://www.irel40.eu/united-monolithic-semiconductors-sas", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://europractice-ic.com/technologies/compound-semiconductors/ums/", "https://www.northdata.com/United%20Monolithic%20Semiconductors%20GmbH,%20Ulm/HRB%203318"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 100.0, "max_wafer_mm": 100, "tags": ["Foundry-services", "GaN", "Photonics/Opto", "Power", "RF", "SiC"], "site_id": "united-monolithic-semiconductors-ums__ulm", "id": "united-monolithic-semico-ulm-100mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "United Monolithic Semiconductors Holding SAS", "ultimate_owner": "Thales Group / Airbus SE (50/50 joint venture)", "owner_country_iso": "FR", "ownership_type": "jv", "note": "50/50 joint venture between French Thales Group and European Airbus SE; established 1996 from combination of Thales and Airbus Defence and Space III-V semiconductor activities; operates in France (Villebon-sur-Yvette) and Germany (Ulm)", "source": "https://www.pappers.fr/entreprise/united-monolithic-semiconductors-holding-sas-407675958/comptes/UNITED%20MONOLITHIC%20SEMICONDUCTORS%20HOLDING%20SAS%20-%20Comptes%20sociaux%202021%2012-09-2022.pdf", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Europe's primary RF and mm-wave MMIC foundry with Thales-Airbus heritage; open platform serving defense, telecom, and aerospace with compound-semiconductor expertise."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.2109, 49.1427]}, "properties": {"company": "Vishay Intertechnology", "fab_name": "Vishay Semiconductor Heilbronn wafer fab", "site_city": "Heilbronn", "country": "Germany", "in_eu": true, "lat": 49.1427, "lon": 9.2109, "coord_precision": "city", "product_types": ["diodes", "rectifiers", "automotive", "analog"], "wafer_size_mm": [150], "process_nodes": ["diode/rectifier process (feature size not node-driven)"], "finest_node": "unknown (diode/rectifier process; not node-driven)", "status": "expanding", "expected_production_year": null, "category": "volume_specialty", "confidence": "medium", "notes": "Ex-Telefunken/TEMIC fab (Vishay acquired TEMIC Semiconductor 1998); in-house wafer source for Diodes Division standard rectifiers/diodes incl. automotive-grade. Recently modernized/expanded; raw-wafer migration 125mm->150mm reported.", "sources": ["https://en.wikipedia.org/wiki/Vishay_Intertechnology", "https://www.vishay.com/en/die-wafer/", "https://abachy.com/news/vishay-building-new-fab-germany", "https://ir.vishay.com/static-files/4d55ec93-939b-45ef-9021-2deedd883941"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Analog/Mixed-signal", "Automotive", "Power"], "site_id": "vishay-intertechnology__heilbronn", "id": "vishay-intertechnology-heilbronn-150mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Baden-Wurttemberg", "last_verified": "2026-06", "owner": {"parent": "None (publicly listed; NYSE: VSH)", "ultimate_owner": "Zandman family (~35-45% voting control)", "owner_country_iso": "US", "ownership_type": "public", "note": "Listed on NYSE under ticker VSH; Zandman family maintains ~35-45% voting control through direct ownership, family trust, and voting trust agreements; institutional investors (BlackRock, Vanguard) hold ~91.3% of shares; operations in Germany, Italy, UK — Ownership detail: Zandman family (controlling voting power ~35-45%); public shareholders institutional/public float", "source": "https://ir.vishay.com/corporate-governance/management/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Heritage Telefunken semiconductor site producing automotive-certified rectifiers and diodes from its own 150mm wafer fab."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.5258, 53.9136]}, "properties": {"company": "Vishay Intertechnology", "fab_name": "Siliconix Itzehoe 200mm power fab", "site_city": "Itzehoe", "country": "Germany", "in_eu": true, "lat": 53.9136, "lon": 9.5258, "coord_precision": "site", "product_types": ["power", "discrete", "MOSFET", "IGBT", "automotive"], "wafer_size_mm": [200], "process_nodes": ["trench power MOSFET (feature size not publicly disclosed)", "power DMOS"], "finest_node": "unknown (automotive trench power MOSFET / PowerMOS / IGBT; node not disclosed)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "8-inch power semiconductor fab (PowerMOS/IGBT), ~550 staff, on Fraunhofer ISIT campus. Former Daimler-Benz/TEMIC fab; Vishay since 1998, renamed Siliconix Itzehoe GmbH 2005 (8-inch buildout). Automotive MOSFET production relocated from US in 2015. Adjacent 300mm fab being added.", "sources": ["https://www.eetimes.com/siliconix-acquires-wafer-fab-from-vishay-for-10-million/", "https://sst.semiconductor-digest.com/2005/02/siliconix-acquires-german-8-in-wafer-fab/", "https://www.vishay.com/en/videos/corporate/Corporate-itzehoe-facility/", "https://www.eetimes.com/vishay-invests-e300m-in-german-fab-expansion/", "https://evertiq.com/news/468", "https://jobs.vishay.com/locations/europe/itzehoe/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Automotive", "Discrete", "Power"], "site_id": "vishay-intertechnology__itzehoe", "id": "vishay-intertechnology-itzehoe-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 550, "region": "Schleswig-Holstein", "last_verified": "2026-06", "owner": {"parent": "None (publicly listed; NYSE: VSH)", "ultimate_owner": "Zandman family (~35-45% voting control)", "owner_country_iso": "US", "ownership_type": "public", "note": "Listed on NYSE under ticker VSH; Zandman family maintains ~35-45% voting control through direct ownership, family trust, and voting trust agreements; institutional investors (BlackRock, Vanguard) hold ~91.3% of shares; operations in Germany, Italy, UK — Ownership detail: Zandman family (controlling voting power ~35-45%); public shareholders institutional/public float", "source": "https://ir.vishay.com/corporate-governance/management/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 55000, "unit": "wafers_per_month", "provenance": "disclosed", "quote": "Once the new fabrication facility is completed and connected to the existing plant, it'll produce up to 55,000 wafers a month", "source": "https://www.manufacturingdive.com/news/vishay-intertechnology-cuts-close-milwaukee-shanghai-germany-semiconductor/728464/", "year": 2026, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "A former Daimler-Benz automotive-semiconductor line now wholly operated by Vishay, Itzehoe shifted high-volume MOSFET and IGBT production from the US in 2015 and is now expanding with an adjacent 300mm line."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.5258, 53.9136]}, "properties": {"company": "Vishay Intertechnology", "fab_name": "Siliconix Itzehoe 300mm power fab (new 12-inch)", "site_city": "Itzehoe", "country": "Germany", "in_eu": true, "lat": 53.9136, "lon": 9.5258, "coord_precision": "site", "product_types": ["power", "discrete", "MOSFET", "automotive"], "wafer_size_mm": [300], "process_nodes": ["automotive power MOSFET (node not disclosed)"], "finest_node": "unknown (automotive power MOSFET; node not disclosed)", "status": "under_construction", "expected_production_year": "2027", "category": "volume_specialty", "confidence": "high", "notes": "New 12-inch automotive MOSFET fab adjacent to the 200mm fab; ~EUR372-374M (~$400M); 4,000 m2 cleanroom; ~150 jobs. Topping-out 19-Jun-2024. Timeline slipped ~1yr: cleanroom done Q3 2025, start-up Q2 2026, series production spring 2027. Combined site capacity up to 55k wafers/month.", "sources": ["https://aeemobility.de/news/vishay-serienstart-fuer-300mm-wafer-fabrik-kommt-spaeter-als-geplant/", "https://www.presseportal.de/pm/169236/5805311", "https://wtsh.de/en/new-chip-factory-for-more-independence", "https://crc.de/uncategorized/vishay-semiconductors-new-12-wafer-fab/?lang=en", "https://www.manufacturingdive.com/news/vishay-intertechnology-cuts-close-milwaukee-shanghai-germany-semiconductor/728464/", "https://www.eetimes.com/vishay-invests-e300m-in-german-fab-expansion/"], "country_iso": "DE", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Automotive", "Discrete", "Power"], "site_id": "vishay-intertechnology__itzehoe", "id": "vishay-intertechnology-itzehoe-300mm", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 372.0, "employees": 150, "region": "Schleswig-Holstein", "last_verified": "2026-06", "owner": {"parent": "None (publicly listed; NYSE: VSH)", "ultimate_owner": "Zandman family (~35-45% voting control)", "owner_country_iso": "US", "ownership_type": "public", "note": "Listed on NYSE under ticker VSH; Zandman family maintains ~35-45% voting control through direct ownership, family trust, and voting trust agreements; institutional investors (BlackRock, Vanguard) hold ~91.3% of shares; operations in Germany, Italy, UK — Ownership detail: Zandman family (controlling voting power ~35-45%); public shareholders institutional/public float", "source": "https://ir.vishay.com/corporate-governance/management/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 214, "authority": "European Commission (DG Competition)", "instrument": "EC state-aid approval (direct grant, EU Chips Act framework) — Germany federal + Schleswig-Holstein Land co-financing", "decision_date": "2026-07-14", "case_id": "SA.120818", "project_capex_eur_million": 372, "source": "https://www.eureporter.co/world/germany/2026/07/17/commission-approves-e659-million-german-state-aid-for-four-new-semiconductor-facilities/", "note": "On 14 July 2026 the European Commission approved a EUR 659m German state-aid package covering four new semiconductor facilities; Vishay Siliconix Itzehoe GmbH (new 12-inch/300mm power MOSFET fab, Itzehoe, Schleswig-Holstein) received the EUR 214m tranche as a direct grant co-financed by the German federal budget and the Land. Case number SA.120818 was named by the Commission in its announcement (per Eureporter, which cites the Commission communication listing all four case numbers: SA.119614 Element 3-5, SA.120818 Vishay, SA.121240 KLA, SA.120179 KETEK). As of this research (17 July 2026), the non-confidential decision text was not yet published in the EC State Aid Register — corroboration rests on the Commission's own press communication as relayed by multiple independent outlets (Global Trade Alert, Adnkronos, Spiegel, Eureporter), not yet the primary register entry. Approved amount is aid; the EUR 372m figure is the input dataset's known capex for the project, which is broadly consistent with independent capex estimates (EUR 300-350m) reported by EE Times/Heise for the fab's first phase.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://globaltradealert.org/state-act/99305-germany-eur-214-million-financial-grant-scheme-to-vishay-siliconix-itzehoe-gmbh-for-the-expansion-of-power-semiconductor-production", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "capacity": {"value": 55000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Once the new fabrication facility is completed and connected to the existing plant, it'll produce up to 55,000 wafers a month", "year": 2023, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "Manufacturing Dive reporting on Vishay Itzehoe expansion"}, "summary": "Vishay's newest 12-inch automotive power hub under construction in north Germany, targeting 2027 production to add 55k monthly capacity for discrete power semiconductors."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.7833, 49.2833]}, "properties": {"company": "Wolfspeed", "fab_name": "Ensdorf SiC Fab (Wolfspeed-ZF)", "site_city": "Ensdorf", "country": "Germany", "in_eu": true, "lat": 49.2833, "lon": 6.7833, "coord_precision": "city", "product_types": ["power", "SiC"], "wafer_size_mm": [200], "process_nodes": ["200mm SiC power device technology (node/feature size not disclosed)"], "finest_node": "200mm SiC power device (node not disclosed)", "status": "cancelled", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Announced 1 Feb 2023 with ZF as 'first fab in Europe'; planned world's-largest 200mm SiC device fab on former coal-plant site in Saarland, tied to IPCEI state aid. Never broke ground; put on indefinite hold Oct 2024 (ZF intending to withdraw) amid weak SiC/EV demand, then effectively shelved after Wolfspeed's Chapter 11 filing in mid-2025.", "sources": ["https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-plan-to-construct-worlds-largest-most-advanced-silicon-carbide-device-manufacturing-facility-in-saarland-germany/", "https://www.semiconductor-today.com/news_items/2024/oct/zf-wolfspeed-241024.shtml", "https://www.eetimes.com/wolfspeed-to-build-200-mm-sic-wafer-fab-in-germany/", "https://en.wikipedia.org/wiki/Wolfspeed", "https://www.businesswire.com/news/home/20230201005034/en/Wolfspeed-Announces-Plan-to-Construct-Worlds-Largest-Most-Advanced-Silicon-Carbide-Device-Manufacturing-Facility-in-Saarland-Germany", "https://www.z2data.com/insights/new-200mm-silicon-carbide-fab-update-wolfspeed-zf-partnership"], "country_iso": "DE", "status_group": "dead", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "RF", "SiC"], "site_id": "wolfspeed__ensdorf", "id": "wolfspeed-ensdorf-200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": 3000.0, "employees": 600, "region": "Saarland", "last_verified": "2026-06", "owner": {"parent": "Wolfspeed, Inc. (US) — the Ensdorf, Germany SiC fab was a planned JV with ZF Friedrichshafen AG; ZF held only a minority stake (~€170M committed, exact % never disclosed) vs. Wolfspeed's ~€2.7–2.75B controlling investment. Project abandoned/shelved by Wolfspeed Oct 2024; ZF reported to have withdrawn entirely. No 2025–2026 revival confirmed.", "ultimate_owner": "Wolfspeed Inc. (NYSE: WOLF); Renesas ~39% largest holder", "owner_country_iso": "US", "ownership_type": "public", "note": "Post-Chapter-11 (reorganized 2025): Renesas Electronics ~39% largest holder (CFIUS clearance 30 Jan 2026), rest dispersed institutional; legacy shareholders ~3-5% — Ownership detail: Wolfspeed, Inc. — publicly traded (NYSE: WOLF), post-Chapter 11 reorganized. Largest single shareholder is Renesas Electronics America Inc. at ~38.7–39.9% (equity issuance completed & CFIUS-cleared May 2026); remaining ~56.3% new equity went to formerly-convertible noteholders (dispersed institut", "source": "https://investor.wolfspeed.com/news/news-details/2026/Wolfspeed-Announces-CFIUS-Clearance-and-Completion-of-Equity-Issuance-to-Renesas-as-Part-of-Court-Approved-Restructuring/default.aspx", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.sec.gov/Archives/edgar/data/895419/000119312525144083/d937053d8k.htm"}, "summary": "Announced as world's largest 200mm SiC device fab with 3B-EUR capex, then shelved after Wolfspeed's 2025 bankruptcy; symbolic casualty of weak EV/SiC demand cycle."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.7741, 51.0998]}, "properties": {"company": "X-FAB", "fab_name": "X-FAB Dresden", "site_city": "Dresden", "country": "Germany", "in_eu": true, "lat": 51.0998, "lon": 13.7741, "coord_precision": "site", "product_types": ["analog", "mixed-signal CMOS", "power", "high-voltage CMOS", "automotive", "specialty CMOS", "GaN", "MEMS"], "wafer_size_mm": [200], "process_nodes": ["1.0um", "0.6um", "350nm"], "finest_node": "350nm", "status": "expanding", "category": "foundry", "confidence": "high", "expected_production_year": null, "notes": "200mm CMOS fab (formerly ZMD) at Grenzstrasse, Dresden. Only X-FAB European site processing GaN-on-Si: 200mm GaN HEMTs & Schottky diodes via JDA with Exagan (prototype 2015, mass-production-capable 2017). Also 200mm MEMS.", "sources": ["https://en.wikipedia.org/wiki/X-Fab", "https://www.xfab.com/news/details/article/x-fab-and-exagan-successfully-produce-first-gan-on-silicon-devices-on-200-mm-wafers", "https://www.xfab.com/news/details/article/x-fab-and-exagan-partner-to-develop-robust-production-process-for-high-volume-gan-on-silicon-devices-on-200mm-wafers", "https://www.xfab.com/manufacturing/our-fabs", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://www.linkedin.com/company/x-fab"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 350.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "GaN", "MEMS", "Power", "RF"], "site_id": "x-fab__dresden", "id": "x-fab-dresden-200mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Saxony", "last_verified": "2026-06", "owner": {"parent": "X-FAB Silicon Foundries SE (Erfurt, Germany-headquartered operationally; group holding company legally domiciled in Tessenderlo-Ham, Belgium) — direct parent of the Corbeil-Essonnes, Dresden, Erfurt and Itzehoe fabs; publicly listed on Euronext Paris and Frankfurt (ticker XFAB)", "ultimate_owner": "Xtrion NV bloc + Sarawak state fund (no majority owner)", "owner_country_iso": "BE", "ownership_type": "public", "note": "Ownership shares as of X-FAB's 2026 AGM proxy statement / 2024 half-year report: Elex NV 25.0% (32,672,778 sh.), Sensinnovat BV 24.4-24.9% (~32.0-32.6m sh.), Sarawak Technology Holdings Sdn. Bhd. 11.4% (14,948,655 sh., Malaysian state of Sarawak), public free float ~38.7% (50,587,907 sh.); total 130,781,669 shares. In late 2023 the prior joint Xtrion NV holding (which historically also controlled Melexis NV) was split between the De Winter-Chombar family and the Duchâtelet fa", "source": "https://www.xfab.com/investors", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.xfab.com/fileadmin/X-FAB/Investor_Relations/Shareholders_Meeting/2026/Proxy_2026_ENG.pdf"}, "capacity": {"value": 24000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Capacity: 24,000 WSPM, with 'capacity upside above 30k WSPM'", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "Fraunhofer ENAS seminar 2019, citing X-FAB"}, "summary": "X-FAB's only European GaN foundry; pioneered 200mm GaN-on-silicon mass production for power converters in automotive and industrial power systems."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.076, 50.951]}, "properties": {"company": "X-FAB", "fab_name": "X-FAB Erfurt (HQ)", "site_city": "Erfurt", "country": "Germany", "in_eu": true, "lat": 50.951, "lon": 11.076, "coord_precision": "site", "product_types": ["analog", "mixed-signal CMOS", "power", "high-voltage", "automotive", "BiCMOS", "SOI", "MEMS", "sensors"], "wafer_size_mm": [150, 200], "process_nodes": ["1.0um", "0.8um", "0.6um", "0.35um", "0.18um", "0.13um", "110nm"], "finest_node": "110nm", "status": "operational", "category": "foundry", "confidence": "medium", "expected_production_year": null, "notes": "X-FAB HQ and oldest fab (since 1992) at Haarbergstr. 67. 6-inch (150mm) CMOS plus 6-/8-inch (150/200mm) MEMS; one of two X-FAB MEMS hubs. R&D site for 3D/chiplet integration, micro-transfer printing, advanced packaging. Finest node is group-level, not strictly Erfurt-confirmed per-fab.", "sources": ["https://www.xfabulous.com/our-locations/erfurt-germany/", "https://www.xfab.com/manufacturing/our-fabs", "https://live.euronext.com/sites/default/files/x-fab_silicon_foundries_se_prospectus_approved_by_fsma.pdf", "https://en.wikipedia.org/wiki/X-Fab", "https://www.xfab.com", "https://www.linkedin.com/company/x-fab"], "country_iso": "DE", "status_group": "live", "finest_node_nm": 110.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "MEMS", "Power", "RF", "Sensors", "Substrate/epi"], "site_id": "x-fab__erfurt", "id": "x-fab-erfurt-200mm-soi", "year_opened": 1992, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Thuringia", "last_verified": "2026-06", "owner": {"parent": "X-FAB Silicon Foundries SE (Erfurt, Germany-headquartered operationally; group holding company legally domiciled in Tessenderlo-Ham, Belgium) — direct parent of the Corbeil-Essonnes, Dresden, Erfurt and Itzehoe fabs; publicly listed on Euronext Paris and Frankfurt (ticker XFAB)", "ultimate_owner": "Xtrion NV bloc + Sarawak state fund (no majority owner)", "owner_country_iso": "BE", "ownership_type": "public", "note": "Ownership shares as of X-FAB's 2026 AGM proxy statement / 2024 half-year report: Elex NV 25.0% (32,672,778 sh.), Sensinnovat BV 24.4-24.9% (~32.0-32.6m sh.), Sarawak Technology Holdings Sdn. Bhd. 11.4% (14,948,655 sh., Malaysian state of Sarawak), public free float ~38.7% (50,587,907 sh.); total 130,781,669 shares. In late 2023 the prior joint Xtrion NV holding (which historically also controlled Melexis NV) was split between the De Winter-Chombar family and the Duchâtelet fa", "source": "https://www.xfab.com/investors", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.xfab.com/fileadmin/X-FAB/Investor_Relations/Shareholders_Meeting/2026/Proxy_2026_ENG.pdf"}, "capacity": {"value": 21000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Capacity (CMOS/BiCMOS/SOI, excl. MEMS): 21,000 wafer starts per month", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "X-FAB company presentation 2019-2020"}, "summary": "Historic foundry and X-FAB headquarters specializing in 110nm analog CMOS and MEMS for automotive and sensors."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.5177, 53.9258]}, "properties": {"company": "X-FAB", "fab_name": "X-FAB MEMS Foundry Itzehoe", "site_city": "Itzehoe", "country": "Germany", "in_eu": true, "lat": 53.9258, "lon": 9.5177, "coord_precision": "city", "product_types": ["MEMS", "sensors", "actuators", "microsystems", "glass-wafer processing"], "wafer_size_mm": [200], "process_nodes": ["200mm MEMS"], "finest_node": "MEMS (no marketed lithographic CMOS node)", "status": "operational", "category": "volume_specialty", "confidence": "high", "expected_production_year": null, "notes": "X-FAB MEMS Foundry Itzehoe GmbH (Fraunhofer ISIT spin-off, acquired 2012, fully owned 2015) at Fraunhoferstrasse 1. 200mm MEMS-only foundry; one of two X-FAB MEMS hubs (with Erfurt); being developed for glass-wafer processing.", "sources": ["https://en.wikipedia.org/wiki/X-Fab", "https://www.xfab.com/manufacturing/our-fabs", "https://www.xfab.com/contact", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://www.xfab.com/news/details/article/x-fab-set-to-receive-funding-from-the-european-ipcei-me-ct-for-semiconductor-technology-innovation", "https://www.xfabulous.com/our-locations/itzehoe-germany/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Foundry-services", "MEMS", "RF", "Sensors"], "site_id": "x-fab__itzehoe", "id": "x-fab-itzehoe-200mm", "year_opened": 2009, "year_first_production": null, "investment_eur_million": null, "employees": 120, "region": "Schleswig-Holstein", "last_verified": "2026-06", "owner": {"parent": "X-FAB Silicon Foundries SE (Erfurt, Germany-headquartered operationally; group holding company legally domiciled in Tessenderlo-Ham, Belgium) — direct parent of the Corbeil-Essonnes, Dresden, Erfurt and Itzehoe fabs; publicly listed on Euronext Paris and Frankfurt (ticker XFAB)", "ultimate_owner": "Xtrion NV bloc + Sarawak state fund (no majority owner)", "owner_country_iso": "BE", "ownership_type": "public", "note": "Ownership shares as of X-FAB's 2026 AGM proxy statement / 2024 half-year report: Elex NV 25.0% (32,672,778 sh.), Sensinnovat BV 24.4-24.9% (~32.0-32.6m sh.), Sarawak Technology Holdings Sdn. Bhd. 11.4% (14,948,655 sh., Malaysian state of Sarawak), public free float ~38.7% (50,587,907 sh.); total 130,781,669 shares. In late 2023 the prior joint Xtrion NV holding (which historically also controlled Melexis NV) was split between the De Winter-Chombar family and the Duchâtelet fa", "source": "https://www.xfab.com/investors", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.xfab.com/fileadmin/X-FAB/Investor_Relations/Shareholders_Meeting/2026/Proxy_2026_ENG.pdf"}, "capacity": {"value": 35000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Capacity (CMOS/RF-SOI, excl. MEMS): 35,000 wafer starts per month", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "X-FAB company presentation 2019-2020"}, "summary": "X-FAB's dedicated MEMS and sensor foundry; pioneering glass-wafer integration for next-generation inertial, pressure, and environmental sensing."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [12.1281, 49.0287]}, "properties": {"company": "ams OSRAM", "fab_name": "Regensburg OSRAM Opto Semiconductors chip fab", "site_city": "Regensburg", "country": "Germany", "in_eu": true, "lat": 49.0287, "lon": 12.1281, "coord_precision": "site", "product_types": ["LED", "laser diodes", "optoelectronics", "compound semiconductor", "GaN", "InGaN", "GaAs", "AlInGaP"], "wafer_size_mm": [100, 150], "process_nodes": ["InGaN/GaN-on-sapphire LED epitaxy (blue/green/white)", "GaAs/AlInGaP LED & laser epitaxy (red/orange/yellow)", "compound-semi wafer processing"], "finest_node": "compound-semi epitaxy (not a CMOS node; feature size not disclosed)", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Main OSRAM Opto chip factory and R&D HQ. Compound-semiconductor front-end fab: InGaN for blue/green/white LEDs, AlInGaP/GaAs for red/orange/yellow LEDs and laser diodes. Public sources confirm 6-inch (150mm); 100mm historical.", "sources": ["https://en.wikipedia.org/wiki/Osram_Opto_Semiconductors_GmbH", "https://ams-osram.com/news/press-releases/pr-30-01-2014", "https://www.led-professional.com/business/company-information/osram-is-first-chip-manufacturer-to-switch-red-and-yellow-led-fabrication-to-6-inch-wafers", "https://compoundsemiconductor.net/article/117681/_Germany_commits_to_Ams_Osram_funding", "https://careers.ams-osram.com/en/regensburg-germany/"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["GaN", "Photonics/Opto", "Power", "Substrate/epi"], "site_id": "ams-osram__regensburg", "id": "ams-osram-regensburg-150mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 2700, "region": "Bavaria (Upper Palatinate)", "last_verified": "2026-06", "owner": {"parent": "ams OSRAM AG (SIX: AMS)", "ultimate_owner": "MULTI", "owner_country_iso": "AT", "ownership_type": "public", "note": "Austrian AG listed on SIX Swiss Exchange; free float >90% (2025), largest single stakes low-single-digit, no controlling shareholder (Temasek, largest post-2020, diluted via capital raises)", "source": "https://ams-osram.com/about-us/investor-relations/share-capital", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Global LED and laser-diode innovation headquarters; makes the compound-semiconductor chips powering most LED colors and industrial light sources."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.9912, 49.7656]}, "properties": {"company": "nanoplus Nanosystems", "fab_name": "Gerbrunn production facility", "site_city": "Gerbrunn", "country": "Germany", "in_eu": true, "lat": 49.7656, "lon": 9.9912, "coord_precision": "site", "product_types": ["photonics", "DFB laser diodes", "InP lasers", "GaAs lasers", "GaSb lasers", "quantum cascade lasers", "interband cascade lasers", "gas-sensing lasers"], "wafer_size_mm": [], "process_nodes": ["III-V DFB laser fabrication (InP/GaAs/GaSb heterostructures)", "dry etch / sputter / evaporation / mask aligner process line", "small-wafer III-V (2-3 inch inferred, not confirmed)"], "finest_node": "III-V DFB laser fabrication (InP/GaAs/GaSb heterostructures)", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Original site and founding HQ (Oberer Kirschberg 4, Gerbrunn); operated by nanoplus Advanced Photonics Gerbrunn GmbH, supplying Meiningen for distribution. ISO 9001/14001. Epitaxy method and wafer size not disclosed.", "sources": ["https://nanoplus.com/contact/directions", "https://nanoplus.com/about/history-innovations", "https://firmeneintrag.creditreform.de/97218/8310469739/NANOPLUS_ADVANCED_PHOTONICS_GERBRUNN_GMBH", "https://nanoplus.com/about", "https://www.bayern-international.de/en/company-database/company-details/nanoplus-nanosystems-and-technologies-gmbh-5324", "https://nanoplus.com/about/news"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": null, "tags": ["Photonics/Opto", "Power", "Substrate/epi"], "site_id": "nanoplus-nanosystems__gerbrunn", "id": "nanoplus-nanosystems-gerbrunn-inp", "year_opened": 1998, "year_first_production": null, "investment_eur_million": null, "employees": 20, "region": "Bavaria", "last_verified": "2026-06", "owner": {"parent": "Advanced Photonics Applications GmbH (100% shareholder, Gerbrunn, Germany)", "ultimate_owner": "Not publicly disclosed", "owner_country_iso": "DE", "ownership_type": "private", "note": "Private GmbH (HR B 520030, Jena court) with holding structure comprising Gerbrunn R&D/production, Meiningen operations, and Boulder (CO) sales subsidiary. Ultimate beneficial owners behind holding company not disclosed in public records.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "Viaductus German business registry, nanoplus legal details page"}, "summary": "nanoplus's founding HQ remains its anchor production site for InP-based quantum cascade lasers and DFB lasers serving industrial sensing, medical, and defense markets across Europe."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [10.3897, 50.5523]}, "properties": {"company": "nanoplus Nanosystems", "fab_name": "Meiningen production facility", "site_city": "Meiningen", "country": "Germany", "in_eu": true, "lat": 50.5523, "lon": 10.3897, "coord_precision": "site", "product_types": ["photonics", "DFB laser diodes", "InP lasers", "GaAs lasers", "GaSb lasers", "quantum cascade lasers", "interband cascade lasers", "gas-sensing lasers"], "wafer_size_mm": [], "process_nodes": ["III-V DFB laser fabrication (InP/GaAs/GaSb heterostructures)", "cleanroom front-end laser processing", "small-wafer III-V (2-3 inch inferred, not confirmed)"], "finest_node": "III-V DFB laser fabrication (InP/GaAs/GaSb heterostructures)", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Second/newer production site (Gleimershaeuser Str. 10, Meiningen-Dreissigacker, Thuringia); registered address of the Meiningen distribution+production entity. One documented cleanroom expansion. ISO 9001/14001.", "sources": ["https://nanoplus.com/contact/directions", "https://nanoplus.com/about", "https://nanoplus.com/about/history-innovations", "https://optonet-jena.de/optonet-mitglieder/nanoplus/", "https://nanoplus.com/about/news"], "country_iso": "DE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": null, "tags": ["Photonics/Opto", "Power"], "site_id": "nanoplus-nanosystems__meiningen", "id": "nanoplus-nanosystems-meiningen-inp", "year_opened": 2008, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Thuringia", "last_verified": "2026-06", "owner": {"parent": "Advanced Photonics Applications GmbH (100% shareholder, Gerbrunn, Germany)", "ultimate_owner": "Not publicly disclosed", "owner_country_iso": "DE", "ownership_type": "private", "note": "Private GmbH (HR B 520030, Jena court) with holding structure comprising Gerbrunn R&D/production, Meiningen operations, and Boulder (CO) sales subsidiary. Ultimate beneficial owners behind holding company not disclosed in public records.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "Viaductus German business registry, nanoplus legal details page"}, "summary": "Germany's specialist high-performance photonic laser foundry, expanding capacity for quantum-cascade and DFB lasers across infrared and gas-sensing applications."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-8.658, 52.6413]}, "properties": {"company": "Analog Devices", "fab_name": "ADI Limerick Wafer Fab (Raheen)", "site_city": "Limerick", "country": "Ireland", "in_eu": true, "lat": 52.6413, "lon": -8.658, "coord_precision": "site", "product_types": ["analog", "mixed-signal", "power", "power management", "RF", "MEMS", "sensors", "IPD"], "wafer_size_mm": [200], "process_nodes": ["0.18um BiCMOS", "0.18um CMOS", "DMOS", "0.5um CMOS", "BCD/power", "thin-film/IPD", "MEMS/IPD (More than Moore)"], "finest_node": "0.18um (180nm) BiCMOS/CMOS", "status": "expanding", "expected_production_year": "2026", "category": "volume_specialty", "confidence": "high", "notes": "ADI's only European front-end wafer fab (Munich HQ is non-fab). 200mm 'More than Moore' BiCMOS/CMOS/DMOS plus IPD/MEMS lines; est. 1976. EUR 630M expansion announced May 2023 (part of IPCEI ME/CT) triples EU capacity, ~600 jobs; under construction.", "sources": ["https://www.analog.com/en/newsroom/press-releases/2023/5-15-23-adi-announces-investment-in-next-gen-semiconductor-facility-in-limerick.html", "https://investor.analog.com/news-releases/news-release-details/analog-devices-announces-investment-eu630-million-next", "https://www.eenewseurope.com/en/analog-devices-taps-europe-for-e630m-fab-in-ireland/", "https://www.analog.com/en/who-we-are/resilient-hybrid-manufacturing.html", "https://www.ardmac.com/case_studies/analog-devices/", "https://www.thinkbusiness.ie/articles/analog-devices-investment-limerick/"], "country_iso": "IE", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "MEMS", "Power", "RF", "Sensors"], "site_id": "analog-devices__limerick", "id": "analog-devices-limerick-200mm", "year_opened": 1977, "year_first_production": 2026, "investment_eur_million": 630.0, "employees": 1500, "region": "Mid-West (Munster)", "last_verified": "2026-06", "owner": {"parent": "Analog Devices Inc. (NASDAQ: ADI)", "ultimate_owner": "Analog Devices Inc.", "owner_country_iso": "US", "ownership_type": "public", "note": "Ireland operations (Limerick headquarters) are wholly owned subsidiaries of NASDAQ-listed parent; dispersed public ownership", "source": "https://investor.analog.com/static-files/fd29fcea-caa6-460f-8d7d-909e25b10935", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 85, "authority": "European Commission (IPCEI ME/CT umbrella scheme) / IDA Ireland (national implementing grant)", "instrument": "IPCEI ME/CT participation + national grant (IDA Ireland)", "decision_date": "2023-06-08", "case_id": "SA.101141", "project_capex_eur_million": 630, "source": "https://www.irishtimes.com/business/2024/10/15/idas-85m-grant-to-analog-devices-the-latest-payment-from-package-of-financial-supports-for-big-chip-makers/", "note": "ADI's EUR 630m Raheen/Limerick fab expansion (announced May 2023) is explicitly framed by IDA Ireland as part of Ireland's IPCEI ME/CT submission, and ADI is confirmed (via press coverage) as one of the 56 companies covered by the EC's 8 June 2023 approval of the IPCEI ME/CT scheme (SA.101141, up to EUR 8.1bn across 14 member states incl. Ireland). The concrete disbursed support is a EUR 85m grant from IDA Ireland to Analog Devices, first publicly reported by the Irish Times on 2024-10-15 as \"the latest payment from a package of financial supports for big chip makers\" tied to this project; exact disbursement schedule and whether it is formally itemized within the SA.101141 decision text are not publicly documented. This is distinct from Ireland's separate SA.105803 energy-cost compensation scheme (approved 2023-03-21, EUR 100m total, individual cap EUR 50m), which funded a EUR 30m grant to Intel, not ADI.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.idaireland.com/latest-news/press-release/analog-devices-announces-investment-of-630-million-in-semiconductor-r-d-and-manufacturing-facility", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "ADI's only European front-end fab expands 630M-EUR under IPCEI ME/CT; triples Ireland's capacity for 180nm BiCMOS mixed-signal and integrated-passive production."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-6.489, 53.366]}, "properties": {"company": "Intel", "fab_name": "Fab 34", "site_city": "Leixlip", "country": "Ireland", "in_eu": true, "lat": 53.366, "lon": -6.489, "coord_precision": "site", "product_types": ["logic", "client CPU", "server CPU", "CPU", "SoC", "foundry"], "wafer_size_mm": [300], "process_nodes": ["Intel 4", "Intel 3"], "finest_node": "Intel 3", "status": "operational", "expected_production_year": null, "category": "volume_logic", "confidence": "high", "notes": "Europe's first high-volume EUV logic fab; began Intel 4 HVM Sept 2023, Intel 3 ramping (for Xeon/foundry). Produces Core Ultra (Meteor Lake) compute tiles. Part of >EUR17B Ireland expansion; positioned for Intel Foundry.", "sources": ["https://newsroom.intel.com/manufacturing/new-fab-ireland-high-volume-production-intel-4-technology", "https://en.wikipedia.org/wiki/List_of_Intel_manufacturing_sites", "https://www.intel.ie/content/www/ie/en/company-overview/intel-leixlip.html", "https://optics.org/news/intels-new-fab-in-ireland-starts-production-of-intel-4-chips", "https://newsroom.intel.com/intel-foundry/updates-intel-10-largest-construction-projects", "https://newsroom.intel.com/manufacturing/ireland-begins-intel-4-production-livestream-replay"], "country_iso": "IE", "status_group": "live", "finest_node_nm": 5.0, "max_wafer_mm": 300, "tags": ["Foundry-services", "GaN", "Logic"], "site_id": "intel__leixlip", "id": "intel-leixlip-300mm", "year_opened": 2023, "year_first_production": null, "investment_eur_million": 17000.0, "employees": 5000, "region": "County Kildare", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "US", "ownership_type": "public", "note": "U.S. public corporation listed on NASDAQ (INTC); dispersed ownership with largest institutional holders being Vanguard (~9.2%), BlackRock (~8.5%), and State Street (~4.5%); U.S. government holds ~9.9% passive stake (non-controlling) via 2025 investment agreement plus 5-year warrant option", "source": "https://newsroom.intel.com/corporate/intel-and-trump-administration-reach-historic-agreement", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 32.5, "authority": "European Commission (state aid) via IDA Ireland", "instrument": "National grant (Irish energy-crisis scheme for microelectronics manufacturers, cleared by EC under the Temporary Crisis and Transition Framework)", "decision_date": "2023-03-21", "case_id": "SA.105803", "project_capex_eur_million": 17000, "source": "https://ireland.representation.ec.europa.eu/news-and-events/news/state-aid-commission-approves-eu100-million-irish-scheme-support-microelectronics-manufacturing-2023-03-21_en", "note": "No EC state-aid decision or IPCEI grant approves capex for Fab 34 itself (~EUR 17bn, incl. its EUV upgrade completed 2023). The only documented official aid to Intel Leixlip is EUR 30m + EUR 2.5m (=EUR 32.5m total) paid by IDA Ireland under the EC-approved (SA.105803, approved 2023-03-21) EUR 100m Irish \"microelectronics manufacturers\" scheme -- an energy-cost-offset scheme (TCTF, Art.107(3)(b) TFEU, cap 40% of eligible costs / EUR 50m per beneficiary), not a capital-investment subsidy. Intel is not listed as a participant in IPCEI ME/CT (SA.101151). An earlier ~EUR170m Irish state-aid bid for an Intel Leixlip fab expansion (~EUR1.6bn project, mid-2000s, Fab 24 era) was withdrawn after EC signalled likely rejection and was never approved. Separately, Ireland has reportedly granted Intel \"hundreds of millions\" in refundable R&D tax credits tied to the Leixlip expansion, but no precise, sourced figure or SA case number is publicly available for that.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.irishtimes.com/business/2024/05/03/ida-gives-intel-30m-to-offset-energy-price-spike/", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "Europe's first high-volume EUV logic fab; began Intel 4 production 2023 and now ramps Intel 3 for Xeon processors and foundry customers."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-6.489, 53.366]}, "properties": {"company": "Intel", "fab_name": "Fab 24 (incl. Fab 24-2; legacy 200mm Fab 10/Fab 14 absorbed)", "site_city": "Leixlip", "country": "Ireland", "in_eu": true, "lat": 53.366, "lon": -6.489, "coord_precision": "site", "product_types": ["logic", "CPU", "SoC", "foundry"], "wafer_size_mm": [300], "process_nodes": ["90nm", "65nm", "14nm"], "finest_node": "14nm", "status": "operational", "expected_production_year": null, "category": "volume_logic", "confidence": "medium", "notes": "First 300mm fab outside the US; Fab 24-2 opened June 2006 on 65nm (first 65nm in Europe), also ran 90nm and later 14nm-class production. Legacy 200mm Fab 10 (inactive) and Fab 14 folded here per current Intel fab list. Current operational node mix not publicly disclosed; third-party foundry Intel 16/Intel 3 attribution unverified.", "sources": ["https://en.wikipedia.org/wiki/List_of_Intel_manufacturing_sites", "https://en.wikipedia.org/wiki/Intel_Ireland", "https://www.intel.ie/content/www/ie/en/company-overview/intel-in-ireland.html", "https://newsroom.intel.com/corporate/intel-ireland-rise-report-2024", "https://newsroom.intel.com/manufacturing/new-fab-ireland-high-volume-production-intel-4-technology"], "country_iso": "IE", "status_group": "live", "finest_node_nm": 14.0, "max_wafer_mm": 300, "tags": ["Foundry-services", "Logic"], "site_id": "intel__leixlip", "id": "intel-leixlip-300mm-2", "year_opened": 2006, "year_first_production": null, "investment_eur_million": null, "employees": 5000, "region": "County Kildare", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "US", "ownership_type": "public", "note": "U.S. public corporation listed on NASDAQ (INTC); dispersed ownership with largest institutional holders being Vanguard (~9.2%), BlackRock (~8.5%), and State Street (~4.5%); U.S. government holds ~9.9% passive stake (non-controlling) via 2025 investment agreement plus 5-year warrant option", "source": "https://newsroom.intel.com/corporate/intel-and-trump-administration-reach-historic-agreement", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Europe's first 300mm fab opened 2006 on 65nm, now a dual-role site running both corporate and foundry work for advanced logic production."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [13.419, 42.032]}, "properties": {"company": "LFoundry (SMIC)", "fab_name": "LFoundry Avezzano (200mm fab)", "site_city": "Avezzano", "country": "Italy", "in_eu": true, "lat": 42.032, "lon": 13.419, "coord_precision": "site", "product_types": ["CMOS image sensors", "image sensors", "analog", "mixed-signal", "smart power", "power management", "SiPM", "photodiodes", "MEMS", "automotive", "power"], "wafer_size_mm": [200], "process_nodes": ["150nm", "110nm", "90nm", "65nm"], "finest_node": "65nm", "status": "operational", "expected_production_year": null, "category": "foundry", "confidence": "high", "notes": "Specialty 200mm foundry, ~40k wpm, ~1,300 staff. Ex-TI (1989) -> Micron/Aptina (CIS legacy) -> LFoundry (2013); SMIC entered 2016, reportedly sold to Jiangsu CAS-IGBT (~$113M) in 2019. Core: automotive/ADAS CMOS image sensors + analog/mixed-signal/smart-power; 90nm in volume, 65nm smallest CD; 200mm only.", "sources": ["https://www.lfoundry.com/en/company", "https://investors.micron.com/news-releases/news-release-details/lfoundry-agrees-acquire-micron-technology-wafer-manufacturing", "https://www.lfoundry.com/en/news/detail/binding-agreement-for-the-sale-of-100-of-lfoundry-shares-to-jiangsu-cas-igbt-technology-2019-03-31", "https://atreg.com/case-studies/atreg-advises-micron-on-200mm-italian-fab-sale/", "https://www.prnewswire.com/news-releases/invensas-dbi-technology-now-available-at-smic-300551857.html", "http://www.iunet.info/doc/V-02-Bez-LFoundry.pdf"], "country_iso": "IT", "status_group": "live", "finest_node_nm": 65.0, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Foundry-services", "MEMS", "Power", "Sensors"], "site_id": "lfoundry-smic__avezzano", "id": "lfoundry-smic-avezzano-200mm", "year_opened": 1990, "year_first_production": null, "investment_eur_million": null, "employees": 1500, "region": "Abruzzo", "last_verified": "2026-06", "owner": {"parent": "SPARC Semiconductor HK Limited (70%) and Wuxi Xichanweixin Semiconductor Co. Ltd. (30%) — joint holders of LFoundry S.r.l., Avezzano", "ultimate_owner": "Wuxi Xichanweixin (CN-linked; structure disputed)", "owner_country_iso": "CN", "ownership_type": "private", "note": "Sources conflict: 70/30 SPARC Semiconductor HK / Wuxi split vs. wholly-owned by Wuxi Xichanweixin (de.wikipedia). Chinese-linked control undisputed; precise chain is not — Ownership detail: Wuxi Xichanweixin Semiconductor (China-linked holding; exact structure disputed)", "source": "https://www.startmag.it/innovazione/lfoundry-avezzano-proprietari-risultati-economici/", "confidence": "low", "verified": "disputed", "as_of": "2026-07-17", "source2": "https://www.startmag.it/innovazione/lfoundry-avezzano/"}, "capacity": {"value": 42325, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "Capacity: 42,325 wafers per month (8-inch equivalent) at the end of 2Q19. The majority-owned Avezzano 200mm fab was disposed of by the Group in 3Q19.", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17", "source_note": "SMIC Q3 2019 Earnings Release"}, "summary": "Italy's largest analog and image-sensor foundry serving automotive ADAS markets; rooted in TI and Aptina's imaging technology legacy with 90nm production maturity."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [11.1597, 46.6713]}, "properties": {"company": "MEMC / GlobalWafers", "fab_name": "Merano crystal growth plant (silicon single-crystal / ingots)", "site_city": "Merano", "country": "Italy", "in_eu": true, "lat": 46.6713, "lon": 11.1597, "coord_precision": "city", "product_types": ["silicon ingots / crystal growth", "monocrystalline silicon ingots", "silicon substrates"], "wafer_size_mm": [300], "process_nodes": ["Czochralski silicon single-crystal growth / ingot pulling (300mm-capable)"], "finest_node": "300mm-capable monocrystalline silicon ingots / crystal growth (upstream feedstock, no device node)", "expected_production_year": null, "status": "operational", "category": "substrate_epi", "confidence": "high", "notes": "Single-crystal ingot site in South Tyrol (Bolzano province); silicon work since 1961, crystal production since 1976. Feeds Novara FAB300, forming one of Europe's few integrated 300mm crystal-to-wafer chains. Legacy polysilicon plant idled 2012, sold 2014.", "sources": ["https://www.gw-semi.com/overview-locations/", "https://news.pcim.mesago.com/globalwafers-launches-europes-new-fully-integrated-wafer-plant-in-italy-a-3013ae0a831013c0def3000d7ed4a1dc/", "https://www.taipeitimes.com/News/biz/archives/2025/10/16/2003845531", "https://www.sas-globalwafers.com/en/gwc_news_en_20251016/"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Photonics/Opto", "Substrate/epi"], "site_id": "memc-globalwafers__merano", "id": "memc-globalwafers-merano-300mm", "year_opened": 1976, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "South Tyrol (Province of Bolzano)", "last_verified": "2026-06", "owner": {"parent": "GlobalWafers Co., Ltd. (Taiwan, listed TWO:6488)", "ultimate_owner": "GlobalWafers (TW); SAS Group 46.6% largest holder", "owner_country_iso": "TW", "ownership_type": "public", "note": "MEMC (formerly SunEdison Semiconductor) acquired 100% by GlobalWafers Co., Ltd. in December 2016. GlobalWafers is Taiwan-incorporated and publicly listed on Taipei Exchange. SAS (Sino-American Silicon Products) holds 46.64% of GlobalWafers and is itself listed on Taiwan exchange with fragmented institutional ownership. — Ownership detail: Sino-American Silicon Products Inc. (SAS) - 46.64% of GlobalWafers Co., Ltd.; remainder dispersed among global institutional investors", "source": "https://www.sas-globalwafers.com/wp-content/uploads/2018/08/2018-GWC-Consolidated-FSwith-signed-page.pdf", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.nist.gov/chips/globalwafers-missouri-st-peters"}, "summary": "Historic crystal-growth site feeding Novara wafer fab to form one of Europe's few integrated 300mm silicon chains from ingot to polished wafer."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [8.6222, 45.4469]}, "properties": {"company": "MEMC / GlobalWafers", "fab_name": "Novara FAB300 (300mm) + legacy 150/200mm silicon wafer lines", "site_city": "Novara", "country": "Italy", "in_eu": true, "lat": 45.4469, "lon": 8.6222, "coord_precision": "city", "product_types": ["polished silicon wafers", "epitaxial silicon wafers", "silicon substrates for logic/memory/power/MEMS/sensors"], "wafer_size_mm": [150, 200, 300], "process_nodes": ["300mm CZ polished silicon wafers", "300mm epitaxial silicon wafers", "legacy 150/200mm polished/epi silicon"], "finest_node": "300mm polished & epitaxial prime silicon wafers (substrate, not a device node)", "expected_production_year": "2025", "status": "expanding", "category": "substrate_epi", "confidence": "high", "notes": "Site producing silicon wafers since 1976 (legacy 150/200mm). New 300mm FAB300 module (EUR 450M, announced Feb 2022) inaugurated Oct 2025 with EUR 103M IPCEI-ME/CT funding; Italy's first 300mm wafer plant, RE100 100% renewable, ramping. Integrated crystal-to-wafer chain with Merano.", "sources": ["https://www.sas-globalwafers.com/en/gwc_news_en_20251016/", "https://news.pcim.mesago.com/globalwafers-launches-europes-new-fully-integrated-wafer-plant-in-italy-a-3013ae0a831013c0def3000d7ed4a1dc/", "https://evertiq.com/design/2025-10-16-globalwafers-opens-new-300mm-wafer-plant-in-italy", "https://www.taipeitimes.com/News/biz/archives/2025/10/16/2003845531", "https://www.semiconductor-today.com/news_items/2024/jun/globalwafers-260624.shtml"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Logic", "MEMS", "Memory/NVM", "Power", "Sensors", "Substrate/epi"], "site_id": "memc-globalwafers__novara", "id": "memc-globalwafers-novara-300mm", "year_opened": 2025, "year_first_production": null, "investment_eur_million": 450.0, "employees": null, "region": "Piedmont (Province of Novara)", "last_verified": "2026-06", "owner": {"parent": "GlobalWafers Co., Ltd. (Taiwan, listed TWO:6488)", "ultimate_owner": "GlobalWafers (TW); SAS Group 46.6% largest holder", "owner_country_iso": "TW", "ownership_type": "public", "note": "MEMC (formerly SunEdison Semiconductor) acquired 100% by GlobalWafers Co., Ltd. in December 2016. GlobalWafers is Taiwan-incorporated and publicly listed on Taipei Exchange. SAS (Sino-American Silicon Products) holds 46.64% of GlobalWafers and is itself listed on Taiwan exchange with fragmented institutional ownership. — Ownership detail: Sino-American Silicon Products Inc. (SAS) - 46.64% of GlobalWafers Co., Ltd.; remainder dispersed among global institutional investors", "source": "https://www.sas-globalwafers.com/wp-content/uploads/2018/08/2018-GWC-Consolidated-FSwith-signed-page.pdf", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.nist.gov/chips/globalwafers-missouri-st-peters"}, "subsidy": {"amount_eur_million": 103, "authority": "Italian Ministry of Enterprises and Made in Italy (MIMIT), following authorization by the European Commission's DG Competition, under Italy's participation in the second IPCEI on Microelectronics and Communication Technologies (IPCEI ME/CT, approved by the EC 8 June 2023)", "instrument": "IPCEI ME/CT national grant (Italy) — R&D grant awarded via MIMIT assignment decree, authorized under the EU's second IPCEI on Microelectronics and Communication Technologies", "decision_date": "MIMIT assignment decree (\"decreto di assegnazione\") issued mid-2024 following EC IPCEI ME/CT authorization (EC umbrella decision dated 8 June 2023); exact MIMIT decree date/number not published in available sources", "case_id": "Not publicly disclosed — no SA.xxxxx case number for the individual MEMC/Novara measure appears in public sources; only the EC's overall second IPCEI ME/CT umbrella approval (8 June 2023, covering 68 projects/56 companies in 14 member states) is documented at the policy level, without project-level SA numbers", "project_capex_eur_million": 450, "source": "https://www.semiconductor-today.com/news_items/2024/jun/globalwafers-260624.shtml", "note": "Approved (not merely pledged): MIMIT issued a formal assignment decree granting MEMC Electronic Materials S.p.A. (GlobalWafers) up to EUR 103 million in R&D state aid for the FAB300 300mm wafer expansion in Novara, following EC DG Competition authorization under the second IPCEI ME/CT wave (EC approved this IPCEI wave on 8 June 2023). Multiple independent trade-press sources (semiconductor-today via GlobalWafers press release, Italian trade press elettronicaemercati.it, Evertiq DE/PL, GlobalWafers' own site) converge consistently on the EUR 103m figure against EUR 450m total project capex. However, no source discloses a specific EC state-aid case number (SA.xxxxx) tied individually to this Italian measure — only the EC's umbrella IPCEI ME/CT approval is documented at that level, distinct from Chips Act Article 25 \"first-of-a-kind\" facility decisions (e.g., Silicon Box Novara SA.113264, which is a separate, unrelated project also in Novara).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.elettronicaemercati.it/a-memc-spa-globalwafers-103-milioni-di-finanziamento-ipcei-me-ct-per-la-nuova-fabbrica-di-wafer-da-300-mm/", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Italy's first 300mm silicon-wafer fab (inaugurated October 2025 with EU Chips Act support) integrates crystal growth and hyperpure substrate production, targeting RE100 renewable operation."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.3597, 45.5783]}, "properties": {"company": "STMicroelectronics", "fab_name": "Agrate Brianza R3 300mm (AG300)", "site_city": "Agrate Brianza", "country": "Italy", "in_eu": true, "lat": 45.5783, "lon": 9.3597, "coord_precision": "site", "product_types": ["power", "smart power (BCD)", "analog", "mixed-signal", "automotive", "industrial"], "wafer_size_mm": [300], "process_nodes": ["BCD (Bipolar-CMOS-DMOS) smart power", "90nm BCD", "110nm BCD", "130nm-class BCD"], "finest_node": "~90nm-class BCD smart-power (exact node not officially disclosed)", "status": "expanding", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "300mm 'R3' megafab near Milan; ST's flagship high-volume facility and center of excellence for analog and BCD smart power / mixed-signal. Ramp began H1 2023; targeting ~4k wpw by 2027, modular to 14k. BCD node generations not officially specified.", "sources": ["https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://www.semiconductor-today.com/news_items/2025/apr/st-150425.shtml", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://www.photonics.com/Articles/STMicroelectronics-Reshapes-Manufacturing-Strategy/a70920", "https://www.powerelectronicsnews.com/stmicroelectronics-starts-300-mm-wafer-production/"], "country_iso": "IT", "status_group": "live", "finest_node_nm": 90.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Automotive", "GaN", "Power"], "site_id": "stmicroelectronics__agrate-brianza", "id": "stmicroelectronics-agrate-brianza-300mm", "year_opened": 2022, "year_first_production": null, "investment_eur_million": null, "employees": 4000, "region": "Lombardy", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "ST's flagship analog and smart-power center of excellence near Milan, now ramping 300mm production to serve automotive and industrial demand across Europe."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.3597, 45.5783]}, "properties": {"company": "STMicroelectronics", "fab_name": "Agrate Brianza R3 300mm — Tower (TSIT) specialty foundry capacity", "site_city": "Agrate Brianza", "country": "Italy", "in_eu": true, "lat": 45.5783, "lon": 9.3597, "coord_precision": "site", "product_types": ["RF SOI", "analog", "RF", "mixed-signal", "specialty foundry"], "wafer_size_mm": [300], "process_nodes": ["65nm", "90nm", "130nm"], "finest_node": "65nm (RF SOI / analog mixed-signal, 300mm)", "status": "operational", "expected_production_year": null, "category": "foundry", "confidence": "high", "notes": "Tower (TSIT subsidiary) specialty-foundry capacity occupying ~1/3 of the R3 cleanroom under the 2021 ST-Tower deal, running Tower's own RF-SOI/analog tools and processes (distinct from ST's BCD line). Qualification completed Q4 2024; ST-owned/operated building, not a Tower-owned site.", "sources": ["https://newsroom.st.com/media-center/press-item.html/c3013.html", "https://towersemi.com/2021/06/24/06242021/", "https://en.wikipedia.org/wiki/Tower_Semiconductor", "https://towersemi.com/manufacturing/manufacturing-overview/", "https://www.engineersgarage.com/stmicroelectronics-and-tower-partner-to-accelerate-st-agrate-r3-300mm-fab-production/", "https://en.wikipedia.org/wiki/STMicroelectronics"], "country_iso": "IT", "status_group": "live", "finest_node_nm": 65.0, "max_wafer_mm": 300, "tags": ["Analog/Mixed-signal", "Foundry-services", "RF", "Substrate/epi"], "site_id": "stmicroelectronics__agrate-brianza", "id": "stmicroelectronics-agrate-brianza-300mm-soi", "year_opened": 2024, "year_first_production": null, "investment_eur_million": null, "employees": 4000, "region": "Lombardy", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "Tower semiconductor's RF-SOI foundry occupies 1/3 of ST's R3 cleanroom; 65nm specialty analog line filling vertical-integration gap in ST's portfolio."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [9.3597, 45.5783]}, "properties": {"company": "STMicroelectronics", "fab_name": "Agrate Brianza 200mm (AG200)", "site_city": "Agrate Brianza", "country": "Italy", "in_eu": true, "lat": 45.5783, "lon": 9.3597, "coord_precision": "site", "product_types": ["MEMS", "sensors", "actuators", "analog", "mixed-signal"], "wafer_size_mm": [200], "process_nodes": ["MEMS process", "mature CMOS/analog mixed-signal"], "finest_node": "MEMS / analog (no marketed CMOS node)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Legacy 200mm fab on the Agrate campus, strategically refocused on high-volume MEMS sensor/actuator production with increasing automation as BCD/mixed-signal shifts to the 300mm R3 fab. Hosts major R&D. Active, not closed.", "sources": ["https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://en.wikipedia.org/wiki/List_of_semiconductor_fabrication_plants", "https://www.photonics.com/Articles/STMicroelectronics-Reshapes-Manufacturing-Strategy/a70920", "https://en.wikipedia.org/wiki/STMicroelectronics"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "MEMS", "Sensors"], "site_id": "stmicroelectronics__agrate-brianza", "id": "stmicroelectronics-agrate-brianza-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 4000, "region": "Lombardy", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "Legacy 200mm MEMS sensor and actuator factory; strategically refocused on high-volume production as mixed-signal workloads migrate to ST's 300mm fab."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.0612, 37.4555]}, "properties": {"company": "STMicroelectronics", "fab_name": "Catania 150/200mm power & SiC/GaN device fab (existing)", "site_city": "Catania", "country": "Italy", "in_eu": true, "lat": 37.4555, "lon": 15.0612, "coord_precision": "city", "product_types": ["power", "smart power", "SiC devices", "GaN-on-silicon", "wide-bandgap", "discrete", "automotive"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm SiC trench/planar MOSFET & diode", "150mm silicon power", "200mm SiC power devices", "GaN-on-Si"], "finest_node": "200mm SiC power (trench MOSFET); 150mm legacy refocusing to 200mm", "status": "expanding", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Existing operational Catania fab (opened 1997): legacy 150mm silicon power lines plus SiC/GaN-on-Si; ST's center of excellence for power and wide-bandgap. 150mm/EWS resources being refocused to 200mm SiC and Si power. Distinct from the new dedicated SiC Campus on the same site.", "sources": ["https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities/catania-st-site.html", "https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.st.com/content/st_com/en/about/innovation-and-technology/sic.html", "https://www.semiconductor-today.com/news_items/2024/may/st-310524.shtml"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Discrete", "GaN", "Power", "SiC"], "site_id": "stmicroelectronics__catania", "id": "stmicroelectronics-catania-200mm-sic", "year_opened": 1997, "year_first_production": null, "investment_eur_million": null, "employees": 5000, "region": "Sicily", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "ST's center of excellence for power and wide-bandgap semiconductors, transitioning to 200mm SiC production for industrial and automotive power."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.083, 37.507]}, "properties": {"company": "STMicroelectronics", "fab_name": "Catania Silicon Carbide Campus (200mm SiC device fab)", "site_city": "Catania", "country": "Italy", "in_eu": true, "lat": 37.507, "lon": 15.083, "coord_precision": "city", "product_types": ["SiC", "power", "automotive", "EV power modules", "industrial power"], "wafer_size_mm": [200], "process_nodes": ["200mm SiC power MOSFET/diode (vertically integrated: substrate, epi, front-end, back-end)"], "finest_node": "200mm SiC power technology (feature-size class, not a CMOS node)", "status": "under_construction", "expected_production_year": "2025", "category": "compound_semi", "confidence": "high", "notes": "New ~EUR 5bn integrated 200mm SiC Campus (~EUR 2bn Italian/EU Chips Act support; EU state aid approved Oct 2022). 200mm SiC wafer production guided to begin Q4 2025, progressing as planned; ramp to ~15k wpw by 2033. First European mass production of 200mm SiC across the full flow.", "sources": ["https://newsroom.st.com/media-center/press-item.html/c3330.html", "https://www.datacenterdynamics.com/en/news/stmicroelectronics-to-build-5bn-silicon-carbide-campus-in-italy-receives-funding-from-eu-chips-act/", "https://www.semiconductor-today.com/news_items/2025/apr/st-150425.shtml", "https://digital-strategy.ec.europa.eu/en/news/milestone-strengthening-europes-semiconductor-manufacturing-capacity-under-chips-act-reached", "https://www.st.com/content/st_com/en/about/innovation-and-technology/sic.html", "https://www.powerelectronicsnews.com/stmicroelectronics-will-build-the-first-fully-integrated-silicon-carbide-plant-in-the-world-in-italy/"], "country_iso": "IT", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Automotive", "Power", "SiC", "Substrate/epi"], "site_id": "stmicroelectronics__catania", "id": "stmicroelectronics-catania-200mm-sic-2", "year_opened": null, "year_first_production": 2025, "investment_eur_million": 5000.0, "employees": 5000, "region": "Sicily", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "subsidy": {"amount_eur_million": 2063.2, "authority": "European Commission (DG Competition), Italy", "instrument": "EC state-aid approval (Italian national direct grant, under EU Chips Act / amended Regional State Aid Guidelines, STEP framework)", "decision_date": "2024-05-31", "case_id": "SA.107594", "project_capex_eur_million": 5000, "source": "https://ec.europa.eu/competition/state_aid/cases1/202450/SA_107594_101.pdf", "note": "EC approved SA.107594 on 31 May 2024: Italian direct grant with nominal aid budget of EUR 2,063.2 million (EUR 1,045.3 million in discounted/present value), fully funded from the Italian national budget, supporting STMicroelectronics' new fully-integrated 200mm SiC \"Catania Campus\" (wafers + vertically integrated power module line), total investment ~EUR 5 billion — matching this fab's listed capex. This is a standalone Italian state-aid measure (not itself an IPCEI decision), though the Commission's decision text explicitly links the underlying 200mm SiC process technology to R&D/first-industrial-deployment work carried out under IPCEI ME-CT (approved Dec 2018 and June 2023). Distinct from an earlier, separate SA measure (~EUR 292.5m, RRF/PNRR-funded, approved Oct 2022) for STMicro's 150mm SiC substrate fab in Catania.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.usnews.com/news/technology/articles/2024-05-31/eu-clears-2-billion-italian-state-aid-for-stmicroelectronics-chip-plant-in-sicily", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "Europe's first mass-production 200mm SiC campus with EUR 5bn Italian-EU investment; targeting high-volume EV power-module manufacturing by 2033."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.0556, 37.4669]}, "properties": {"company": "STMicroelectronics", "fab_name": "Catania SiC substrate facility", "site_city": "Catania", "country": "Italy", "in_eu": true, "lat": 37.4669, "lon": 15.0556, "coord_precision": "city", "product_types": ["SiC", "SiC bulk substrates", "SiC boules"], "wafer_size_mm": [150, 200], "process_nodes": ["SiC boule growth and substrate wafering (150mm transitioning to 200mm)"], "finest_node": "200mm SiC substrate (materials fab, not a CMOS node)", "status": "expanding", "expected_production_year": "2025", "category": "substrate_epi", "confidence": "medium", "notes": "SiC substrate (boule growth + wafering) facility on the Catania Campus, feeding ST's internal SiC device lines. EU RRF support ~EUR 293m (Oct 2022); evolving 150mm to 200mm aligned with the Campus' Q4 2025 200mm wafer start.", "sources": ["https://newsroom.st.com/media-center/press-item.html/c3262.html", "https://www.st.com/content/st_com/en/about/innovation-and-technology/sic.html", "https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities/catania-st-site.html"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["RF", "SiC", "Substrate/epi"], "site_id": "stmicroelectronics__catania", "id": "stmicroelectronics-catania-200mm-sic-3", "year_opened": null, "year_first_production": 2025, "investment_eur_million": 293.0, "employees": 5000, "region": "Sicily", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "subsidy": {"amount_eur_million": 292.5, "authority": "European Commission (state aid), funded via Italy's PNRR / EU Recovery and Resilience Facility (RRF); granting authority: Italian Ministry of Economy and Finance", "instrument": "EC state-aid approval of an Italian direct grant (RRF/PNRR-funded), assessed under Art. 107(3)(c) TFEU with reference to the European Chips Act Communication", "decision_date": "2022-10-05", "case_id": "SA.103083", "project_capex_eur_million": 730, "source": "https://ec.europa.eu/commission/presscorner/api/files/document/print/en/ip_22_5970/IP_22_5970_EN.pdf", "note": "This is the \"Catania 1\" decision: EC approved on 5 Oct 2022 a €292.5m Italian RRF/PNRR direct grant (disbursed in instalments through 2027) supporting STMicroelectronics' €730m integrated SiC wafer/substrate plant in Catania (target completion 2026), beneficiary STMicroelectronics s.r.l. This is APPROVED (not pledged) aid. Note: our dataset's capex figure for this specific entry (293 EUR million) closely matches the approved AID amount (292.5), not the EC-documented total project capex of 730 — the 730 figure is the one attached to the separate dataset entry \"stmicroelectronics-sic-e-catania-200mm-sic\" (ex-Norstel), which appears to describe the same underlying SA.103083-funded facility. This SA.103083/€292.5m grant is distinct and earlier than the much larger 2024 \"Catania Campus\" 200mm SiC project (SA.107594, ~€2bn aid / ~€5bn capex, EC-approved 31 May 2024), which corresponds to the separate dataset entry \"stmicroelectronics-catania-200mm-sic-2\".", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://ec.europa.eu/competition/state_aid/cases1/202319/SA_103083_2017C787-0100-CE18-A88A-B85CC0A6279B_148_1.pdf", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "ST's in-house SiC substrate factory evolving from 150mm to 200mm with EUR 293 million European support to supply internal power-semiconductor lines."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [15.0656, 37.4602]}, "properties": {"company": "STMicroelectronics (SiC, ex-Norstel)", "fab_name": "Catania SiC substrate manufacturing facility (Silicon Carbide Campus)", "site_city": "Catania", "country": "Italy", "in_eu": true, "lat": 37.4602, "lon": 15.0656, "coord_precision": "city", "product_types": ["SiC substrates", "SiC epiwafers", "power", "compound semiconductor"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm 4H-SiC epitaxial substrates (volume - first of a kind in Europe)", "200mm SiC substrate manufacturing (industrialization underway)", "200mm SiC epitaxy"], "finest_node": "200mm SiC substrate (4H-SiC)", "status": "expanding", "expected_production_year": "2026", "category": "substrate_epi", "confidence": "high", "notes": "ST's 2nd SiC substrate site (alongside Norrkoping); pioneered volume 150mm SiC epitaxial substrates in Europe, now industrializing a 200mm line. Part of integrated Silicon Carbide Campus (substrate->epi->200mm device->back-end); EUR5bn project, full capacity ~2033, EUR2bn Italian state support under EU Chips Act.", "sources": ["https://newsroom.st.com/media-center/press-item.html/c3262.html", "https://www.semiconductor-today.com/news_items/2024/may/st-310524.shtml", "https://reforms-investments.ec.europa.eu/projects/innovation-and-technology-microelectronics-new-silicon-carbide-substrate-manufacturing-facility_en", "https://www.trendforce.com/news/2024/06/04/news-st-to-build-a-new-8-inch-sic-facility-in-italy-with-eur-5-billion/", "https://newsroom.st.com/media-center/press-item.html/c3124.html", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities/catania-st-site.html"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "stmicroelectronics-sic-ex-norstel__catania", "id": "stmicroelectronics-sic-e-catania-200mm-sic", "year_opened": 2023, "year_first_production": null, "investment_eur_million": 730.0, "employees": 5500, "region": "Sicily", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "STMicroelectronics N.V.", "owner_country_iso": "CH", "ownership_type": "public", "note": "Norstel AB fully acquired by STMicroelectronics N.V. in 2019-2020 (55% in Feb 2019, remaining 45% exercised, USD 137.5M total); now operates as STMicroelectronics SiC AB. STMicroelectronics N.V. is publicly listed on Paris, Milan, and New York exchanges. Strategic shareholder block STMicroelectronics Holding N.V. (27.5%) jointly held by Italian state and Bpifrance; remaining 72.5% in public float.", "source": "https://investors.st.com/static-files/812b421e-0611-488f-93f7-113308b5df7c", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.marklines.com/en/news/233469"}, "subsidy": {"amount_eur_million": 292.5, "authority": "European Commission (DG Competition)", "instrument": "EC state-aid approval (direct grant funded via Italy's Recovery and Resilience Facility)", "decision_date": "2022-10-04", "case_id": "SA.103083", "project_capex_eur_million": 730, "source": "https://ec.europa.eu/competition/state_aid/cases1/202319/SA_103083_2017C787-0100-CE18-A88A-B85CC0A6279B_148_1.pdf", "note": "Approved (not just pledged): EC Decision C(2022) 7165 final, SA.103083 (2022/N) \"Italy — ad hoc investment support to STMicroelectronics for a new silicon carbide substrate manufacturing plant in Sicily,\" adopted 4 Oct 2022 (press release IP/22/5970, 5 Oct 2022). €292.5m direct grant backs the €730m total investment for the Catania SiC substrate/wafer plant (ex-Norstel line), matching this entry's capex exactly. Note: this is a separate, smaller project/aid case from STMicro's later €2bn (SA.107594, May 2024) integrated SiC \"Catania Campus\" for SiC power devices (€5bn total investment) — do not conflate the two; this entry corresponds to the SA.103083/€292.5m substrate plant only. Underlying technology also links to IPCEI Microelectronics (SA.46595, 2018) and IPCEI ME/CT (2023), but no separate IPCEI case number/amount specific to this facility is publicly disclosed.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://ec.europa.eu/commission/presscorner/api/files/document/print/en/ip_22_5970/IP_22_5970_EN.pdf", "channel": "state_aid", "channel_label": "National aid, EC-approved"}, "summary": "ST's second SiC substrate hub (alongside Sweden) pioneers volume 150mm and emerging 200mm silicon-carbide epi-wafers, anchoring an integrated EUR 5bn campus spanning substrate through back-end assembly."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [7.646, 45.132]}, "properties": {"company": "Vishay Intertechnology", "fab_name": "Vishay Semiconductor Italiana wafer fab (Borgaro Torinese)", "site_city": "Borgaro Torinese (Turin)", "country": "Italy", "in_eu": true, "lat": 45.132, "lon": 7.646, "coord_precision": "city", "product_types": ["power", "diodes", "rectifiers", "Schottky", "MOSFET", "IGBT modules"], "wafer_size_mm": [150], "process_nodes": ["Schottky planar", "submicron trench power process"], "finest_node": "submicron trench (exact feature size not disclosed)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "medium", "notes": "Front-end wafer fab in Torino acquired with International Rectifier Power Control Systems business (closed Apr-2007, ~$290M). ~135,000 sq ft; planar HV MOSFETs, Schottky, FRED/HEXFRED ultrafast rectifiers; also IGBT module assembly and SiLA laser-anneal R&D. Active into 2025.", "sources": ["https://eepower.com/news/vishay-completes-acquisition-of-power-control-systems-business-from-international-rectifier/", "https://www.eetimes.com/document.asp?doc_id=1176668", "https://www.vishay.com/en/diodes/schottky/", "https://www.imaps-italy.it/download.html?n=VSI&e=pdf", "https://www.creditsafe.com/business-index/en-gb/company/vishay-semiconductor-italiana-spa-siglabile-vishay-spa-o-vsi-spa-it04000693"], "country_iso": "IT", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Power"], "site_id": "vishay-intertechnology__borgaro-torinese-turin", "id": "vishay-intertechnology-borgaro-torinese-150mm", "year_opened": 1995, "year_first_production": null, "investment_eur_million": null, "employees": 236, "region": "Piedmont", "last_verified": "2026-06", "owner": {"parent": "None (publicly listed; NYSE: VSH)", "ultimate_owner": "Zandman family (~35-45% voting control)", "owner_country_iso": "US", "ownership_type": "public", "note": "Listed on NYSE under ticker VSH; Zandman family maintains ~35-45% voting control through direct ownership, family trust, and voting trust agreements; institutional investors (BlackRock, Vanguard) hold ~91.3% of shares; operations in Germany, Italy, UK — Ownership detail: Zandman family (controlling voting power ~35-45%); public shareholders institutional/public float", "source": "https://ir.vishay.com/corporate-governance/management/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Vishay's acquisition from International Rectifier; manufactures high-voltage MOSFETs and ultrafast rectifiers for power-conversion systems across automotive and industrial markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.854, 52.24]}, "properties": {"company": "MESA+ Institute for Nanotechnology, University of Twente", "fab_name": "MESA+ NanoLab cleanroom (NanoLabNL Twente)", "site_city": "Enschede", "country": "Netherlands", "in_eu": true, "lat": 52.24, "lon": 6.854, "coord_precision": "site", "product_types": ["MEMS", "photonics", "SiN photonics", "microfluidics", "sensors", "nanostructures", "generic IC/electronics R&D"], "wafer_size_mm": [100, 150], "process_nodes": ["100mm/150mm research line", "i-line/sub-micron lithography", "sub-100nm nanophotonic patterning", "SiN (TriPleX) photonics", "MEMS/NEMS"], "finest_node": "sub-100nm (academic R&D nanofab, no industrial CMOS node marketed)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "medium", "notes": "Single MESA+ academic R&D/pilot cleanroom; Bldg 16, Hallenweg 15, Enschede. ~1,250 m2. Origin site for spin-offs LioniX, PHIX, QuiX; PhotonDelta node. SiN (TriPleX) photonics, MEMS, microfluidics.", "sources": ["https://www.utwente.nl/en/mesaplus/nanolab/", "https://nanolabnl.nl/locations-contact/", "https://www.utwente.nl/en/news/2024/12/40809/kings-working-visit-to-mesa-nanolab-university-of-twente", "https://www.utwente.nl/en/news/2015/11/200451/five-years-of-the-nanolab-at-the-university-of-twente-in-ten-figures", "https://www.utwente.nl/en/mesaplus/about/historie-tijdlijn/stories/Five%20years%20nanolab%20celebrated/", "https://www.utwente.nl/en/mesaplus/"], "country_iso": "NL", "status_group": "rd", "finest_node_nm": 100.0, "max_wafer_mm": 150, "tags": ["MEMS", "Photonics/Opto", "Sensors"], "site_id": "mesa-institute-for-nanotechnology-university-of-twente__enschede", "id": "mesa-institute-for-nanot-enschede-150mm", "year_opened": 2010, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Overijssel", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "University of Twente (public Dutch research institution)", "owner_country_iso": "NL", "ownership_type": "foundation", "note": "MESA+ is not a separate corporation but an internal research institute of the University of Twente. Governed by the university's Executive Board. No independent legal status or shareholding; operates as part of the university's organizational structure with ~€45M annual turnover and 500-550 staff.", "source": "https://www.utwente.nl/en/about-us/structure/", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://en.wikipedia.org/wiki/University_of_Twente"}, "summary": "University of Twente's photonics and MEMS R&D line, spawning spin-off foundries LioniX and PHIX; anchors Netherlands' silicon-photonics cluster."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.8443, 51.8512]}, "properties": {"company": "NXP Semiconductors", "fab_name": "Nijmegen ICN8", "site_city": "Nijmegen", "country": "Netherlands", "in_eu": true, "lat": 51.8512, "lon": 5.8443, "coord_precision": "site", "product_types": ["power", "analog", "mixed-signal", "automotive"], "wafer_size_mm": [200], "process_nodes": ["LFET1T 45V (automotive high-voltage power/mixed-signal)", "LFET1T 65V (automotive high-voltage power/mixed-signal)"], "finest_node": "unknown (mature 200mm analog/power/mixed-signal; feature size undisclosed)", "status": "operational", "category": "volume_specialty", "expected_production_year": null, "confidence": "high", "notes": "NXP's only wholly-owned operating European front-end fab. 200mm Manufacturing Center of Excellence for LFET1T 45V/65V automotive power/mixed-signal. Legacy lines ICN5/ICN6 closed; long-term phase-out planned but undated. Gerstweg 2, Nijmegen.", "sources": ["https://www.nxp.com/pcn/202203024I", "https://media.digikey.com/pdf/PCNs/NXP/202012022I.pdf", "https://www.nxp.com/company/about-nxp/worldwide-locations/netherlands:NETHERLANDS", "https://bits-chips.com/article/closure-of-nxps-nijmegen-fab-appears-on-the-horizon/", "https://www.nxp.com/company/about-nxp/history:NXP-HISTORY"], "country_iso": "NL", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Automotive", "Power"], "site_id": "nxp-semiconductors__nijmegen", "id": "nxp-semiconductors-nijmegen-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 1700, "region": "Gelderland", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "NXP Semiconductors N.V. (NASDAQ), dispersed float", "owner_country_iso": "NL", "ownership_type": "public", "note": "NXP Semiconductors N.V. is a Dutch public company headquartered in Eindhoven, listed on NASDAQ (NXPI). Institutions hold over 90% of outstanding shares. Proposed Qualcomm acquisition (valued ~$44-47B, agreed October 2016) terminated July 2018 when Chinese regulatory approval was not obtained. NXP remains independent. — Ownership detail: Dispersed institutional investors (Fidelity, Vanguard, BlackRock, JPMorgan, State Street and others); no single controlling parent", "source": "https://www.nxp.com/company/about-nxp/investor-relations/investor-faqs:INVESTORS-FAQS", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://en.wikipedia.org/wiki/NXP_Semiconductors"}, "summary": "NXP's sole European front-end fab; manufactures automotive high-voltage power ICs with undated long-term phase-out; legacy lines already closed."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.4561, 51.4108]}, "properties": {"company": "SMART Photonics", "fab_name": "Eindhoven InP PIC Foundry (High Tech Campus, 100mm line)", "site_city": "Eindhoven", "country": "Netherlands", "in_eu": true, "lat": 51.4108, "lon": 5.4561, "coord_precision": "site", "product_types": ["photonics", "InP photonic integrated circuits", "datacom/telecom", "sensing (LiDAR)"], "wafer_size_mm": [100], "process_nodes": ["InP generic PIC platform (active+passive building blocks)", "100mm (4-inch) InP wafer process", "MPW/generic InP foundry process"], "finest_node": "InP generic photonic platform (waveguide-geometry, no CMOS node disclosed)", "status": "operational", "category": "foundry", "expected_production_year": null, "confidence": "high", "notes": "Europe's only pure-play InP PIC foundry; SMART-owned operational front-end fab on High Tech Campus Eindhoven. Transitioned 3-inch to 4-inch (100mm) InP wafers Feb 2024, roughly doubling capacity.", "sources": ["https://smartphotonics.nl", "https://www.photondelta.com/news/smart-photonics-scaling-up-to-4-inch-wafer-production-that-doubles-the-production-capacity-realising-a-lower-price-per-chip/", "https://www.photonics.com/Articles/SMART-Photonics-Doubles-Production-Capacity/a69677", "https://www.tue.nl/en/impact/tue-participations/spin-offs-in-tue-participations/smart-photonics", "https://smartphotonics.nl/blog/smart-photonics-the-journey-to-become-a-tier-1-foundry/"], "country_iso": "NL", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 100, "tags": ["Foundry-services", "Photonics/Opto"], "site_id": "smart-photonics__eindhoven", "id": "smart-photonics-eindhoven-100mm-inp", "year_opened": 2024, "year_first_production": null, "investment_eur_million": 150.0, "employees": null, "region": "North Brabant", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "SMART Photonics B.V., dispersed institutional", "owner_country_iso": "NL", "ownership_type": "private", "note": "Privately held Dutch company with dispersed institutional shareholders including PhotonDelta, BOM Brabant Ventures, ING Corporate Investments, KPN Ventures, Innovation Industries, ASML, NXP Semiconductors, Invest-NL, and Dutch Ministry of Economic Affairs & Climate Policy. No single identified corporate parent or controlling shareholder. — Ownership detail: SMART Photonics B.V. (no single corporate parent; dispersed institutional ownership)", "source": "https://smartphotonics.nl/about-us/facts-figures/", "confidence": "medium", "verified": null, "as_of": "2026-07-17", "source2": "https://www.crunchbase.com/organization/smart-photonics"}, "subsidy": {"amount_eur_million": 60, "authority": "Government of the Netherlands (Ministry of Economic Affairs and Climate Policy), via Nationaal Groeifonds / PhotonDelta Foundation", "instrument": "National grant (Dutch National Growth Fund / Nationaal Groeifonds, disbursed via the PhotonDelta programme) — not an EC state-aid SA.xxxxx case (none identified in public records) and not a company-specific EU Chips Act or IPCEI ME/CT allocation", "decision_date": "2023-07-12", "case_id": "", "project_capex_eur_million": 150, "source": "https://smartphotonics.nl/smart-photonics-secures-e100-mln-in-additional-funding/", "note": "No EC state-aid SA.xxxxx case number, IPCEI ME/CT allocation, or EU Chips Act direct grant is publicly documented for SMART Photonics specifically. The clearest, best-sourced company-specific public-funding record is the EUR60m in Dutch government public funding (Nationaal Groeifonds, via the PhotonDelta programme) disbursed as part of a EUR100m financing round announced 12 July 2023 (EUR60m public / EUR40m from ASML, NXP, VDL Groep, ING, BOP Impact Ventures, Invest-NL Deep Tech Fund and existing investors). SMART Photonics' own site separately cites \"EUR75m from the National Growth Fund\" for its PhotonDelta industrialization role, but sources do not clarify whether this is additive to or overlapping with the EUR60m 2023 tranche, so it is reported here only as a caveat, not the headline figure. Separately, PhotonDelta received a EUR53.8m Dutch National Growth Fund contribution (plus an expected ~EUR66.3m EU investment) toward Dutch participation in the PIXEurope EU pilot line consortium, but no source names SMART Photonics as a direct beneficiary of that EU-level tranche or gives a company-level breakdown. The EUR150m capex figure is the input dataset's known project capex; it is not confirmed as the capex specifically underwritten by the EUR60m grant (which was disclosed alongside a EUR100m financing round).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.invest-nl.nl/en/impact/portfolio/smart-photonics?lang=en", "channel": "national", "channel_label": "National programme"}, "capacity": {"value": 5000, "unit": "wafers_per_year_100mm_eq", "provenance": "disclosed", "quote": "Current production capacity of 5,000 wafers", "source": "https://smartphotonics.nl/wp-content/uploads/2023/11/infographic-smart-photonics.pdf", "year": 2023, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Europe's sole InP photonic-integrated-circuit foundry, scaled to 100mm wafers and doubling capacity for datacom and sensing systems."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.4565, 51.4105]}, "properties": {"company": "SMART Photonics", "fab_name": "Eindhoven 6-inch InP Photonic Chip Pilot Line (PIXEurope, TNO-operated)", "site_city": "Eindhoven", "country": "Netherlands", "in_eu": true, "lat": 51.4105, "lon": 5.4565, "coord_precision": "site", "product_types": ["photonics", "InP photonic integrated circuits", "advanced InP photonic chips"], "wafer_size_mm": [150], "process_nodes": ["6-inch (150mm) InP photonic chip process", "industrial-scale InP PIC platform"], "finest_node": "Advanced InP photonic platform on 150mm wafers (no CMOS node disclosed)", "status": "under_construction", "category": "rd_pilot", "expected_production_year": "2027", "confidence": "medium", "notes": "Europe's first industrial-scale 6-inch InP photonic pilot line, separate building/cleanroom on HTCE behind SMART. TNO-hosted/operated under EU PIXEurope/Chips Act (~EUR 153m/5yr); SMART is a partner/end user, not the named future owner. Construction start Mar 2026, operational ~2027.", "sources": ["https://www.tno.nl/en/technology-science/facilities/photonic-chip-pilot-line/", "https://smartphotonics.nl/start-construction-6-inch-pilot-line/", "https://www.photondelta.com/news/high-tech-campus-eindhoven-invests-in-and-constructs-building-and-cleanroom-facilities-for-tnos-6-inch-photonic-chip-pilot-line/", "https://pixeurope.eu", "https://www.optica-opn.org/home/industry/2025/july/dutch_consortium_boosts_european_inp_wafer_production/"], "country_iso": "NL", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto"], "site_id": "smart-photonics__eindhoven", "id": "smart-photonics-eindhoven-150mm-inp", "year_opened": null, "year_first_production": 2027, "investment_eur_million": 153.0, "employees": null, "region": "North Brabant", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "SMART Photonics B.V., dispersed institutional", "owner_country_iso": "NL", "ownership_type": "private", "note": "Privately held Dutch company with dispersed institutional shareholders including PhotonDelta, BOM Brabant Ventures, ING Corporate Investments, KPN Ventures, Innovation Industries, ASML, NXP Semiconductors, Invest-NL, and Dutch Ministry of Economic Affairs & Climate Policy. No single identified corporate parent or controlling shareholder. — Ownership detail: SMART Photonics B.V. (no single corporate parent; dispersed institutional ownership)", "source": "https://smartphotonics.nl/about-us/facts-figures/", "confidence": "medium", "verified": null, "as_of": "2026-07-17", "source2": "https://www.crunchbase.com/organization/smart-photonics"}, "subsidy": {"amount_eur_million": 66.3, "authority": "European Commission / Chips Joint Undertaking (Horizon Europe) jointly with Netherlands Ministry of Economic Affairs and National Growth Fund (PhotonDelta)", "instrument": "EU Chips Act pilot-line grant via Chips Joint Undertaking (Horizon Europe, \"PIXEurope\" consortium, CORDIS Grant Agreement 101213727) plus Dutch national co-funding (National Growth Fund/PhotonDelta + Ministry of Economic Affairs). No EC Article-107 state-aid SA case number identified; no IPCEI ME/CT link found.", "decision_date": "2024-11-11 (Chips JU/PIXEurope consortium selection and NL funding announcement); Grant Agreement effective 2025-06-01", "case_id": "CORDIS GA 101213727 (no SA.xxxxx state-aid case exists for this project)", "project_capex_eur_million": 153, "source": "https://www.rijksoverheid.nl/actueel/nieuws/2024/11/11/europa-kiest-voor-proeffabriek-fotonische-chips-met-groot-aandeel-nederland", "note": "Approved figure is €66.3M EU Chips Act/Chips JU contribution to the Netherlands portion of PIXEurope, matched by €66.3M Dutch national co-funding (€53.8M PhotonDelta/National Growth Fund + €12.5M Ministry of Economic Affairs), totaling €132.6M — but this covers BOTH the Eindhoven (SMART Photonics/TNO/TU/e) and Enschede (Univ. of Twente) pilot-line sites jointly; no official source discloses a site-level (Eindhoven-only) split. In CORDIS, Dutch beneficiaries with individual EU contributions are TNO €13.47M, TU Eindhoven €8.02M, and Univ. Twente €3.73M (SMART Photonics itself is not a listed CORDIS beneficiary; TNO operates the Eindhoven facility). Total pan-European PIXEurope consortium: €176.05M total cost / €88.03M EU (Horizon Europe) contribution across 20 institutions in 11 countries; wider public commentary cites ~€380-400M total PIXEurope budget. Project capex of €153M (matching the input JSON) is cited by PhotonDelta/High Tech Campus Eindhoven sources as funded via EU Chips Act + PhotonDelta + Ministry of Economic Affairs + Ministry of Defence + TNO — a broader envelope than the €132.6M PIXEurope-only figure. No EC state-aid SA case and no IPCEI ME/CT participation found anywhere in public sources.", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.photondelta.com/news/photondelta-contributes-e53-8-million-to-pix-europe-pilot-line/", "channel": "eu_direct", "channel_label": "EU direct (Chips JU)"}, "summary": "Europe's first industrial-scale 6-inch InP photonic pilot line; TNO-operated Chips Act project establishing mass-manufacturing readiness for integrated photonic chips."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.4257, 51.4097]}, "properties": {"company": "imec", "fab_name": "Joint imec-ASML High-NA EUV Lithography Lab (Veldhoven)", "site_city": "Veldhoven", "country": "Netherlands", "in_eu": true, "lat": 51.4097, "lon": 5.4257, "coord_precision": "site", "product_types": ["High-NA EUV lithography R&D", "advanced patterning", "logic/memory process development"], "wafer_size_mm": [300], "process_nodes": ["High-NA EUV (0.55 NA) process development", "sub-2nm logic and DRAM patterning R&D (18-20nm metal pitch)"], "finest_node": "sub-2nm patterning R&D (High-NA EUV, TWINSCAN EXE:5000)", "status": "rd_pilot", "expected_production_year": null, "category": "rd_pilot", "confidence": "high", "notes": "Joint imec-ASML High-NA EUV R&D lab at ASML HQ, Veldhoven, built around the EXE:5000 0.55-NA prototype. Acts as virtual extension of Leuven 300mm line (exposures here, pre/post-processing in Leuven). Litho R&D, not a production fab.", "sources": ["https://www.imec-int.com/en/articles/entering-high-na-euv-lithography-era", "https://www.imec-int.com/en/press/asml-and-imec-open-joint-high-na-euv-lithography-lab-offering-early-development-platform", "https://optics.org/news/asml-and-imec-open-high-na-euv-lithography-lab", "https://www.linkedin.com/posts/nanoic-pilot-line_angstromera-highna-euv-activity-7442134010350178304-RX4S"], "country_iso": "NL", "status_group": "rd", "finest_node_nm": 2.0, "max_wafer_mm": 300, "tags": ["Logic", "Memory/NVM"], "site_id": "imec__veldhoven", "id": "imec-veldhoven-300mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "North Brabant", "last_verified": "2026-06", "owner": {"parent": "None (core entity: IMEC vzw non-profit; Fidimec N.V. listed as corporate parent in databases but no public ownership disclosed)", "ultimate_owner": "Flemish Government / non-profit (no single private ultimate owner)", "owner_country_iso": "BE", "ownership_type": "foundation", "note": "Structured as non-profit association (vzw) headquartered Leuven, Belgium; founded 1984 by Flemish Government with initial €62M public investment; operates as independent research institute; ~20% funding from Flemish Government, ~80% from industry; governed by board with industry, university, and government delegates; operates centers in Netherlands and Spain under imec trademark", "source": "https://www.imec-int.com/en/about-us", "confidence": "medium", "verified": null, "as_of": "2026-07-17"}, "summary": "Joint EUV lithography research facility pioneering sub-3-nanometre process development; bridges imec's process R&D with ASML's advanced lithography tools."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [5.4877, 51.448]}, "properties": {"company": "nanoPHAB B.V", "fab_name": "nanoPHAB nanophotonics micro-fab (NanoLab@TU/e)", "site_city": "Eindhoven", "country": "Netherlands", "in_eu": true, "lat": 51.448, "lon": 5.4877, "coord_precision": "site", "product_types": ["photonics", "photonic integrated circuits", "III-V photonics", "metasurfaces", "gratings", "nanophotonics"], "wafer_size_mm": [50, 75, 100], "process_nodes": ["e-beam / nanofabrication of sub-wavelength photonic structures (III-V and III-V-on-silicon / SOI); minimum feature size not publicly disclosed"], "finest_node": "unknown (nanoscale e-beam patterning of photonic structures; no CMOS node, minimum CD not disclosed)", "status": "operational", "category": "compound_semi", "confidence": "medium", "expected_production_year": null, "notes": "TU/e spin-off (2015), pure-play III-V nanophotonics foundry. Uses shared NanoLab@TU/e cleanroom (Spectrum, Groene Loper 19) -- no standalone fab. III-V & III-V-on-Si PICs, metasurfaces, gratings; prototyping to small/medium volume. Wafer size [50,75,100] is an unconfirmed inference.", "sources": ["https://www.nanophab.com", "https://www.tue.nl/en/impact/tue-participations/spin-offs-in-tue-participations/nanophab", "https://www.tue.nl/en/research/research-groups/nanolabtue/nanolabtue", "https://nanolabnl.nl/locations-contact/", "https://www.linkedin.com/company/nanophab"], "country_iso": "NL", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 100, "tags": ["Foundry-services", "Photonics/Opto", "RF", "Substrate/epi"], "site_id": "nanophab-b-v__eindhoven", "id": "nanophab-b-v-eindhoven-100mm", "year_opened": 2015, "year_first_production": null, "investment_eur_million": null, "employees": 5, "region": "North Brabant", "last_verified": "2026-06", "owner": {"parent": "None disclosed", "ultimate_owner": "Not publicly disclosed (founder/investor-controlled)", "owner_country_iso": "NL", "ownership_type": "private", "note": "Spin-off from Eindhoven University of Technology (COBRA Research Institute), registered as independent Dutch company 16 December 2015. Operates as standalone nanophotonics foundry. Ultimate beneficial owners and cap table not publicly documented.", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source_note": "nanoPHAB website (nanophab.com), TU/e participations registry"}, "summary": "A TU/e spinoff founded 2015, nanoPHAB operates a pure-play III-V nanophotonics foundry within a shared university cleanroom, serving prototyping to mid-volume orders for metasurfaces and PICs."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [10.7178, 59.9433]}, "properties": {"company": "SINTEF", "fab_name": "SINTEF MiNaLab (Micro- and Nanotechnology Laboratory)", "site_city": "Oslo", "country": "Norway", "in_eu": false, "lat": 59.9433, "lon": 10.7178, "coord_precision": "site", "product_types": ["MEMS", "sensors", "piezoMEMS", "radiation detectors", "photonics", "micro-optics", "bioMEMS", "silicon actuators"], "wafer_size_mm": [150], "process_nodes": ["150mm FZ silicon MEMS/microsystems", "thin-film piezoMEMS (PZT/AlN)", "silicon radiation detector pad diodes", "micro-optics / silicon photonic integrated circuits"], "finest_node": "unknown (micron-scale features; no CMOS node marketed)", "status": "rd_pilot", "category": "rd_pilot", "confidence": "high", "expected_production_year": null, "notes": "800 m2 ISO-certified cleanroom; 150mm Si pilot line for MEMS/microsystems R&D plus small/medium-scale production. The only independent complete microchip fab line in Norway; SINTEF-owned and part of the NorFab network.", "sources": ["https://www.sintef.no/en/all-laboratories/minalab/", "https://norfab.no/labs/sintef-minalab/", "https://europractice-ic.com/sintef/", "https://www.sintef.no/en/digital/departments/department-of-smart-sensors-and-microsystems/micro-optics/", "https://www.sintef.no/en/latest-news/2014/minalab-celebrated-10-years/"], "country_iso": "NO", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["MEMS", "Photonics/Opto", "Power", "RF", "Sensors"], "site_id": "sintef__oslo", "id": "sintef-oslo-150mm", "year_opened": 2004, "year_first_production": null, "investment_eur_million": 29.0, "employees": null, "region": "Eastern Norway (Østlandet)", "last_verified": "2026-06", "owner": {"parent": "SINTEF Foundation (parent entity of group; operates as research foundation group with 6 institutes: Community, Energy, Digital, Industry, Ocean, Manufacturing)", "ultimate_owner": "Stiftelsen SINTEF (self-owned foundation)", "owner_country_iso": "NO", "ownership_type": "foundation", "note": "Non-profit, self-owned research foundation with no external owners; explicitly no shareholders, authorities, or partners can instruct decisions; operates as group where foundation is majority or sole owner of research institutes (some wholly owned via SINTEF AS subsidiary, others are limited companies with external minority sector co-owners such as SINTEF Ocean 71.6% SINTEF + 16.2% Norwegian Shipowners); no dividends paid to any owners; all surpluses reinvested in research infrastructure and scientific equipment", "source": "https://www.sintef.no/en/sintef-group/this-is-sintef/sintef-an-independent-research-foundation/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 10000, "unit": "wafers_per_year_150mm_eq", "provenance": "disclosed", "quote": "Throughput of 10,000 wafers per year", "source": "https://indico.cern.ch/event/668355/contributions/2754905/attachments/1555974/2446862/SINTEF_MiNaLab_10nov2017_ERDIT.pdf", "year": 2023, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Norway's sole independent wafer fab and Nordic MEMS leader, operating open access for sensor and microsystem prototyping and small-batch manufacturing."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [10.483, 59.417]}, "properties": {"company": "Safran Sensing Norway AS", "fab_name": "Horten MEMS Fab (Sensonor / Safran Sensing Technologies Norway)", "site_city": "Horten", "country": "Norway", "in_eu": false, "lat": 59.417, "lon": 10.483, "coord_precision": "city", "product_types": ["MEMS", "gyroscopes", "IMU", "inertial sensors", "pressure sensors"], "wafer_size_mm": [150], "process_nodes": ["MEMS gyro/IMU process, in-house 150mm wafer fab (no CMOS node)"], "finest_node": "MEMS (no CMOS node; 6-inch / 150mm tactical-grade gyro/IMU MEMS process)", "status": "operational", "category": "volume_specialty", "confidence": "high", "expected_production_year": null, "notes": "Former Sensonor AS (Horten, est. 1985); part of Safran Electronics & Defense since Oct 2021, renamed Safran Sensing Technologies Norway AS Apr 2022. Captive 150mm MEMS gyro/IMU/pressure-sensor line (STIM2xx/STIM3xx) operating since 1985; also offers MEMS foundry services since 2019.", "sources": ["https://en.wikipedia.org/wiki/Safran_Sensing_Technologies_Norway", "https://www.safran-group.com/locations/norway/safran-sensing-technologies-norway-2126812", "https://www.safran-group.com/products-services/safran-sensing-technologies-foundry-services", "https://candidate.jobbsys.no/firm/details?customerId=92727", "https://safran-navigation-timing.com/sstn-sed-transparency-act/", "https://www.safran-group.com/locations/norway/safran-sensing-technologies-norway-2126815"], "country_iso": "NO", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Foundry-services", "MEMS", "Sensors"], "site_id": "safran-sensing-norway-as__horten", "id": "safran-sensing-norway-as-horten-150mm", "year_opened": 1985, "year_first_production": null, "investment_eur_million": null, "employees": 60, "region": "Vestfold", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Safran S.A.", "owner_country_iso": "FR", "ownership_type": "public", "note": "Wholly owned subsidiary of Safran Electronics & Defense (part of Safran Group) since 1 October 2021 (formerly Sensonor AS). Safran S.A. is listed on Euronext Paris (CAC 40, Euro Stoxx 50) with ~11-12% French state, ~5-8% employees, ~80% public float.", "source": "https://en.wikipedia.org/wiki/Safran_Sensing_Technologies_Norway", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.safran-group.com/download/press_release/file/2125879"}, "capacity": {"value": 175, "unit": "wafer_starts_per_week_150mm", "provenance": "disclosed", "quote": "150 – 200 wafer starts per week (8 to 20 layers)", "source": "https://sensonor.azurewebsites.net/foundry-services/", "year": 2024, "verified": "unreachable", "as_of": "2026-07-17"}, "summary": "Norway's sole captive MEMS fab for tactical-grade gyroscopes and inertial sensors since 1985; foundry services since 2019, feeding precision aerospace and defense."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [20.8147, 52.2099]}, "properties": {"company": "VIGO Photonics", "fab_name": "Ożarów Mazowiecki HQ fab (compound-semi epitaxy + IR detector line)", "site_city": "Ożarów Mazowiecki", "country": "Poland", "in_eu": true, "lat": 52.2099, "lon": 20.8147, "coord_precision": "site", "product_types": ["infrared detectors", "MWIR/LWIR photodiodes", "HgCdTe (MCT) epitaxial wafers", "III-V epitaxial wafers (InAs/InAsSb/InGaAs)", "detection modules", "semiconductor lasers", "mid-IR photonics (emerging MIRPIC)"], "wafer_size_mm": [], "process_nodes": ["HgCdTe (MCT) epitaxy by MOCVD (since 2007, replacing earlier ISOVPE)", "III-V epitaxy by MBE (InAs, InAsSb RoHS-compliant materials)"], "finest_node": "unknown", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "high", "notes": "Operational full front-end + back-end: II-VI (HgCdTe/MCT) MOCVD epitaxy and III-V MBE epitaxy, detector chips, lasers, assembly. HQ west of Warsaw; wafer diameter not publicly disclosed.", "sources": ["https://vigophotonics.com/about-us/", "https://vigophotonics.com/", "https://en.wikipedia.org/wiki/Vigo_Photonics", "https://www.gov.pl/web/eu-innovation-journey/vigo-photonics-sa", "https://www.photonics.com/Buyers-Guide/VIGO-Photonics/c15759", "https://www.linkedin.com/company/vigo-photonics"], "country_iso": "PL", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": null, "tags": ["Photonics/Opto", "Power", "Substrate/epi"], "site_id": "vigo-photonics__ozarow-mazowiecki", "id": "vigo-photonics-ozarow-mazowieck-gaas", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 240, "region": "Masovian Voivodeship", "last_verified": "2026-06", "owner": {"parent": "None (listed parent company VIGO Photonics S.A.)", "ultimate_owner": "Public / dispersed shareholders (largest: Warsaw Equity ASI ~14.3%)", "owner_country_iso": "PL", "ownership_type": "public", "note": "Listed on Warsaw Stock Exchange (WSE ticker VGO); no single controlling shareholder exceeds 15%; founders (Piotrowski, Grudzień, Kubrak, Więcław) hold ~30-35% combined but below control threshold; dispersed institutional and public float", "source": "https://vigophotonics.com/investor-relations/about-vigo/shareholders/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Poland's infrared photonics leader; produces HgCdTe and III-V compound-semiconductor wafers for military and thermal-imaging applications."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [20.8147, 52.2099]}, "properties": {"company": "VIGO Photonics", "fab_name": "HyperPIC / MIRPIC mid-IR photonics foundry", "site_city": "Ożarów Mazowiecki area (exact site not disclosed)", "country": "Poland", "in_eu": true, "lat": 52.2099, "lon": 20.8147, "coord_precision": "region", "product_types": ["mid-IR photonic integrated circuits (MIRPIC)", "epitaxial wafers for mid-IR photonics", "infrared detectors"], "wafer_size_mm": [], "process_nodes": ["mid-IR PIC platform (feature size / wafer diameter not disclosed)"], "finest_node": "unknown", "status": "announced", "expected_production_year": "2029", "category": "compound_semi", "confidence": "medium", "notes": "HyperPIC project (RDI + FID phases): planned dedicated mid-IR PIC foundry billed as first semiconductor factory in Poland; ~PLN 1bn investment, ~PLN 430M EU (FENG) funding + EIB venture debt up to EUR 21M. Production targeted 2029; not yet under construction.", "sources": ["https://vigophotonics.com/hyperpic/", "https://en.wikipedia.org/wiki/Vigo_Photonics", "https://vigophotonics.com/project-hyperpic-has-been-selected-for-funding-under-feng/", "https://vigophotonics.com/vigo-signs-conditional-agreement-with-eib-for-financing-of-hyperpic-project-and-development-of-projects-related-to-infrared-detectors-and-modules/", "https://vigophotonics.com/vigo-revenue-estimates-for-q1-2025-2/", "https://www.photonics.com/Buyers-Guide/VIGO-Photonics/c15759"], "country_iso": "PL", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": null, "tags": ["Foundry-services", "Photonics/Opto", "Substrate/epi"], "site_id": "vigo-photonics__ozarow-mazowiecki-area-exact-site-not-disclosed", "id": "vigo-photonics-ozarow-mazowieck", "year_opened": null, "year_first_production": 2029, "investment_eur_million": 230.0, "employees": 240, "region": "Masovian Voivodeship", "last_verified": "2026-06", "owner": {"parent": "None (listed parent company VIGO Photonics S.A.)", "ultimate_owner": "Public / dispersed shareholders (largest: Warsaw Equity ASI ~14.3%)", "owner_country_iso": "PL", "ownership_type": "public", "note": "Listed on Warsaw Stock Exchange (WSE ticker VGO); no single controlling shareholder exceeds 15%; founders (Piotrowski, Grudzień, Kubrak, Więcław) hold ~30-35% combined but below control threshold; dispersed institutional and public float", "source": "https://vigophotonics.com/investor-relations/about-vigo/shareholders/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 102.85, "authority": "European Commission (state-aid compatibility) + Polish National Centre for Research and Development (NCBR), FENG programme", "instrument": "IPCEI ME/CT state aid (EC-approved), implemented via Polish national grant under FENG/NCBR", "decision_date": "2024-05-15", "case_id": null, "project_capex_eur_million": 253.41, "source": "https://vigophotonics.com/reports/decision-approving-the-amount-of-state-aid-for-the-vigo-photonics-project/", "note": "Polish NCBR co-financing agreement (IPCEI ME/CT), 15 May 2024", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://vigophotonics.com/vigo-photonics-signed-an-agreement-with-ncbir-to-co-finance-the-project-hyperpic-photonic-integrated-circuits-for-mid-infrared-applications-from-european-funds/", "channel": "ipcei", "channel_label": "IPCEI (national, EU framework)"}, "summary": "Poland's first planned semiconductor factory — a mid-infrared photonics foundry targeting 2029 production with EUR 1 billion investment."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [2.1074, 41.5006]}, "properties": {"company": "Instituto de Microelectrónica de Barcelona , CSIC", "fab_name": "IMB-CNM Integrated Micro and Nanofabrication Clean Room (Sala Blanca SBCNM, MICRONANOFABS node)", "site_city": "Cerdanyola del Vallès (Bellaterra), Barcelona", "country": "Spain", "in_eu": true, "lat": 41.5006, "lon": 2.1074, "coord_precision": "site", "product_types": ["MEMS", "sensors", "actuators", "silicon radiation/particle detectors", "power devices", "microsystems", "photonics", "graphene microdevices"], "wafer_size_mm": [100, 150], "process_nodes": ["micron-scale CMOS-compatible R&D flow", "MEMS micromachining / DRIE", "e-beam & maskless / nano-imprint patterning"], "finest_node": "micron-scale CMOS-compatible (sub-15nm features only via e-beam nanopatterning, not a production node)", "status": "operational", "category": "rd_pilot", "confidence": "high", "expected_production_year": null, "notes": "~1,500 m2 ISO5-7 open-access ICTS cleanroom at UAB campus, ~190 tools, ~2,000 wafers/yr. Only Spanish line for transistor-based ICs + sensors/MEMS/HEP detectors. Core 100/150mm Si; up to 200mm on demand. Prototyping/small-series.", "sources": ["https://www.imb-cnm.csic.es/en/micro-and-nanofabrication-clean-room", "https://micronanofabs.org/en/book-of-solutions/", "https://www.nanbiosis.es/portfolio/u8-micro-nano-technology-unit/", "https://indico.global/event/16219/contributions/143652/attachments/66693/129085/Pellegrini_CNID_2026.pdf", "https://www.linkedin.com/company/imb-cnm-csic", "https://www.investinspain.org/content/icex-invest/en/noticias-main/2022/csic-barcelona.html"], "country_iso": "ES", "status_group": "live", "finest_node_nm": 15.0, "max_wafer_mm": 150, "tags": ["Discrete", "MEMS", "Photonics/Opto", "Power", "Sensors"], "site_id": "instituto-de-microelectronica-de-barcelona-csic__cerdanyola-del-valles-bellaterra-barcelona", "id": "instituto-de-microelectr-cerdanyola-del-v-150mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 200, "region": "Catalonia", "last_verified": "2026-06", "owner": {"parent": "Centro Nacional de Microelectrónica (CNM), part of CSIC", "ultimate_owner": "CSIC (Spanish National Research Council)", "owner_country_iso": "ES", "ownership_type": "state", "note": "Public research institute established 1985 as part of CSIC; one of three centers comprising Centro Nacional de Microelectrónica; located on Campus UAB but not owned by UAB — Ownership detail: CSIC (Consejo Superior de Investigaciones Científicas / Spanish National Research Council)", "source": "https://www.imb-cnm.csic.es/es/el-instituto/el-imb-cnm", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 2000, "unit": "wafers_per_year", "provenance": "disclosed", "quote": "Processed wafers yearly: 2,000 / 2,500 obleas", "source": "https://www.imb-cnm.csic.es/sites/default/files/content/file/2023/11/29/28/flyer_imb_cnm-digital.pdf", "year": 2023, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "Spain's only academic line for transistor-based ICs and MEMS; open-access prototyping hub serving particle physics, embedded sensors, and microsystems innovation."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-4.4214, 36.7213]}, "properties": {"company": "imec", "fab_name": "imec 300mm R&D pilot line (Malaga / Andalusia)", "site_city": "Malaga", "country": "Spain", "in_eu": true, "lat": 36.7213, "lon": -4.4214, "coord_precision": "city", "product_types": ["advanced CMOS R&D", "logic"], "wafer_size_mm": [300], "process_nodes": ["advanced CMOS R&D (to complement Leuven 300mm line)"], "finest_node": "unknown (planned 300mm R&D line; scope to complement Leuven)", "status": "announced", "expected_production_year": "unknown", "category": "rd_pilot", "confidence": "medium", "notes": "Announced via MoU with Government of Spain and Junta de Andalucia: 300mm R&D cleanroom in Malaga to complement imec's existing 300mm advanced CMOS line in Leuven. Planned, not yet built as of mid-2026.", "sources": ["https://www.imec-int.com/en/about-us", "https://www.electronicspecifier.com/industries/spain-andalusia-and-imec-to-set-up-300mm-chip-r-d-line/", "https://www.inkworldmagazine.com/breaking-news/imec-to-set-up-new-300mm-rd-process-line-in-andalusia/", "https://digital.gob.es/en/comunicacion/notas-prensa/mtdfp/2025/01/2025-01-17", "https://www.imec-int.com/en/press/spanish-government-region-andalusia-and-imec-sign-memorandum-understanding-mou-intention"], "country_iso": "ES", "status_group": "future", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Logic"], "site_id": "imec__malaga", "id": "imec-malaga-300mm", "year_opened": null, "year_first_production": null, "investment_eur_million": 615.0, "employees": 250, "region": "Andalusia", "last_verified": "2026-06", "owner": {"parent": "None (core entity: IMEC vzw non-profit; Fidimec N.V. listed as corporate parent in databases but no public ownership disclosed)", "ultimate_owner": "Flemish Government / non-profit (no single private ultimate owner)", "owner_country_iso": "BE", "ownership_type": "foundation", "note": "Structured as non-profit association (vzw) headquartered Leuven, Belgium; founded 1984 by Flemish Government with initial €62M public investment; operates as independent research institute; ~20% funding from Flemish Government, ~80% from industry; governed by board with industry, university, and government delegates; operates centers in Netherlands and Spain under imec trademark", "source": "https://www.imec-int.com/en/about-us", "confidence": "medium", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 500, "authority": "Government of Spain — Ministry for Digital Transformation and Public Function (MTDFP), with Junta de Andalucía and City of Málaga as co-signatories", "instrument": "National grant under Spain's PERTE Chip (NextGenerationEU-backed strategic project), executed via Sociedad Estatal de Transformación Tecnológica (SETT), plus regional in-kind contribution from Junta de Andalucía (land + one-third of cleanroom equipping/operating costs). No EC state-aid SA case number and no confirmed direct EU Chips Act (Chips JU) grant have been published for this project.", "decision_date": "2025-01-17", "case_id": "", "project_capex_eur_million": 615, "source": "https://digital.gob.es/en/comunicacion/notas-prensa/mtdfp/2025/01/2025-01-17", "note": "This is a confirmed NATIONAL/REGIONAL grant (approved, quantified, and progressively disbursed by Spain's government), not an EC state-aid SA-numbered decision. Perplexity search found no SA.xxxxx case in the EC state-aid register for PERTE Chip or IMEC Málaga specifically, and no evidence of a direct EU Chips Act (Chips Joint Undertaking) grant to this Málaga facility — the EC-funded Chips Act pilot line for imec is the separate NanoIC line in Leuven (~EUR700m EU funding, EUR2.5bn total, unrelated to this Málaga capex figure). Of Spain's EUR500m: EUR105m already committed for imec advisory work, EUR9m for pre-construction technical projects, EUR227m reserved for facility construction; machinery/equipment costs to be split between Spain and Junta de Andalucía at a later, unspecified stage. The Junta de Andalucía's own euro contribution has not been officially quantified (defined only as land + one-third of White Room capex/opex).", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://digital.gob.es/en/comunicacion/notas-prensa/secretaria-digitalizacion-e-inteligencia-artificial/2024/07/2024-07-16", "channel": "national", "channel_label": "National programme"}, "summary": "Planned expansion of Europe's advanced-logic R&D footprint; 300mm cleanroom in southern Spain to complement imec's Leuven pilot line."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [17.8376, 59.4233]}, "properties": {"company": "Coherent (ex-II-VI)", "fab_name": "Coherent Jarfalla 6-inch InP wafer fab", "site_city": "Jarfalla", "country": "Sweden", "in_eu": true, "lat": 59.4233, "lon": 17.8376, "coord_precision": "city", "product_types": ["photonics", "InP lasers", "EML (electro-absorption modulated lasers)", "DFB lasers", "DFB-MZ / Mach-Zehnder modulators", "high-speed photodetectors", "high-power CW lasers for silicon photonics", "coherent optics / AI transceivers"], "wafer_size_mm": [100, 150], "process_nodes": ["InP photonics platform", "150mm (6-inch) InP wafer fabrication", "200G EML", "200G DFB-MZ", "100G EML", "high-speed photodetector"], "finest_node": "6-inch (150mm) InP photonics platform (200G EML / DFB-MZ class; no CMOS node)", "status": "expanding", "category": "compound_semi", "confidence": "high", "expected_production_year": null, "notes": "Finisar Sweden AB site (Finisar/II-VI/ex-Syntune-Northlight lineage). One of Coherent's two world-first 6-inch InP scalable fabs (with Sherman TX), announced Mar 2024; ramping 6-inch off legacy smaller InP for AI transceivers/6G. Oxford Instruments supplies automated 6-inch InP tools.", "sources": ["https://www.coherent.com/news/press-releases/worlds-first-6-inch-inp-scalable-wafer-fabs-paving-the-way-for-the-next-generation-of-lasers-for-ai-transceivers-and-6g-wireless-networks", "https://www.semiconductor-today.com/news_items/2024/mar/coherent-250324.shtml", "https://www.coherent.com/company/locations/emea/sweden/coherent-jarfalla", "https://www.oxinst.com/news/oxford-instruments-delivers-automated-6%E2%80%9D-inp-wafer-processing-for-next-gen-ai", "https://compoundsemiconductor.net/article/119020/World%E2%80%99s_first_6-inch_InP_scalable_wafer_fabs", "https://www.coherent.com"], "country_iso": "SE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Power", "RF"], "site_id": "coherent-ex-ii-vi__jarfalla", "id": "coherent-ex-ii-vi-jarfalla-150mm-inp", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Stockholm County", "last_verified": "2026-06", "owner": {"parent": "Coherent Corp (NYSE: COHR) — Coherent Corp is the direct legal parent for the European fab estate; European entities sit under intermediate holding companies (e.g., Coherent (UK) Holdings B Ltd. now holds II-VI Laser Enterprise GmbH, Zurich, replacing II-VI Holdings B.V. as of 24 Jun 2024 per Swiss commercial register — an internal restructuring, not a change of ultimate control)", "ultimate_owner": "Coherent Corp (NYSE: COHR), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "US public company; Bain Capital holds a preferred-equity stake from the 2022 Coherent acquisition financing (exact current % not publicly confirmed)", "source": "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/aerospace-defense/britain-buys-semiconductor-factory-secure-supply-military-2024-09-27/"}, "summary": "One of the world's first scalable 6-inch InP fabs (paired with Coherent Texas), Jarfalla ramped production in 2024 to supply high-speed AI transceivers and silicon-photonics lasers for hyperscale datacenters."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [17.9475, 59.4038]}, "properties": {"company": "Coherent (ex-II-VI)", "fab_name": "Coherent Kista SiC substrate & epitaxy line (ex-Ascatron)", "site_city": "Kista, Stockholm", "country": "Sweden", "in_eu": true, "lat": 59.4038, "lon": 17.9475, "coord_precision": "site", "product_types": ["SiC", "silicon carbide substrates", "SiC epitaxial wafers", "wide-bandgap power electronics", "SiC power devices (prototype/development)"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm SiC substrate/epitaxy", "200mm SiC substrate/epitaxy", "thick SiC epitaxy for >1kV (up to ~10kV) power devices", "3DSiC device process (legacy Ascatron, prototype)"], "finest_node": "200mm SiC substrate/epitaxial wafers (thick epi platforms; no CMOS node)", "status": "expanding", "category": "substrate_epi", "confidence": "high", "expected_production_year": null, "notes": "Legacy Ascatron SiC site (KTH Electrum campus, Kista); acquired by II-VI 2020, now Coherent (~75%, DENSO/Mitsubishi 12.5% each). Runs 150/200mm SiC epitaxy and substrate growth for European market under ~$1B/10yr SiC program. Coherent exited SiC devices but kept materials/epi.", "sources": ["https://www.coherent.com/news/press-releases/ii-vi-incorporated-accelerates-investment-in-silicon-carbide-substrate-and-epitaxial-wafer-manufacturing-with-large-scale-factory-expansions-in-pennsylvania-and-sweden", "https://www.globenewswire.com/news-release/2020/08/12/2077549/0/en/II-VI-Incorporated-to-Acquire-Ascatron-and-Outstanding-Interests-in-INNOViON-for-Vertically-Integrated-Silicon-Carbide-Power-Electronics-Technology-Platform.html", "https://eenewseurope.com/news/ii-vi-buys-swedish-sic-wafer-maker-ascatron", "https://www.coherent.com/company/locations/emea/sweden/coherent-kista", "https://www.coherent.com", "https://en.wikipedia.org/wiki/Coherent,_Inc."], "country_iso": "SE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "coherent-ex-ii-vi__kista-stockholm", "id": "coherent-ex-ii-vi-kista-stockholm-200mm-sic", "year_opened": 2014, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Stockholm County", "last_verified": "2026-06", "owner": {"parent": "Coherent Corp (NYSE: COHR) — Coherent Corp is the direct legal parent for the European fab estate; European entities sit under intermediate holding companies (e.g., Coherent (UK) Holdings B Ltd. now holds II-VI Laser Enterprise GmbH, Zurich, replacing II-VI Holdings B.V. as of 24 Jun 2024 per Swiss commercial register — an internal restructuring, not a change of ultimate control)", "ultimate_owner": "Coherent Corp (NYSE: COHR), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "US public company; Bain Capital holds a preferred-equity stake from the 2022 Coherent acquisition financing (exact current % not publicly confirmed)", "source": "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/aerospace-defense/britain-buys-semiconductor-factory-secure-supply-military-2024-09-27/"}, "summary": "Sweden's SiC substrate and epitaxy hub at KTH campus, now owned by Coherent with Japanese co-investors, serving power-device makers across Europe despite Coherent's device-business exit."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [16.192, 58.586]}, "properties": {"company": "STMicroelectronics", "fab_name": "Norrkoping SiC substrate/epi fab (ex-Norstel)", "site_city": "Norrkoping", "country": "Sweden", "in_eu": true, "lat": 58.586, "lon": 16.192, "coord_precision": "city", "product_types": ["SiC", "SiC substrates", "SiC epiwafers", "power"], "wafer_size_mm": [150, 200], "process_nodes": ["SiC boule growth", "150mm SiC substrate", "200mm SiC substrate", "SiC epitaxy"], "finest_node": "200mm SiC substrate/epi (material, not a CMOS node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Acquired via Norstel (full control 2019). At production start in 2021 was the first in the world to make 200mm SiC wafers. Feeds ST's vertically integrated SiC power business at Catania.", "sources": ["https://en.wikipedia.org/wiki/STMicroelectronics", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html", "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-facilities.html", "https://www.semiconductor-digest.com/stmicroelectronics-manufactures-first-200mm-silicon-carbide-wafers/"], "country_iso": "SE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "stmicroelectronics__norrkoping", "id": "stmicroelectronics-norrkoping-200mm-sic", "year_opened": 2021, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Ostergotland", "last_verified": "2026-06", "owner": {"parent": "STMicroelectronics Holding N.V. (Netherlands) — holds ~27.5% of STMicroelectronics N.V. shares and voting rights, the controlling block; remainder (~72%) is public free float", "ultimate_owner": "French + Italian states (~27.5% jointly via ST Holding NV)", "owner_country_iso": "MULTI", "ownership_type": "state", "note": "STMicroelectronics N.V. is a Netherlands-incorporated, dual-listed (Euronext Paris/Milan + NYSE) public company; its single controlling block is not free-float but a bilateral sovereign JV: STMicroelectronics Holding N.V. owns ~27.5% (250,704,754 shares per ST's 2021 20-F; secondary trackers show ~27.5-28.2% through 2025-2026, i.e. essentially unchanged) and is split exactly 50%/50% between Bpifrance (France) and the Italian MEF (Italy), so each government's economic/voting s", "source": "https://www.reuters.com/sustainability/stmicro-seeks-reassure-italy-over-investment-job-levels-2025-04-10/", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://investors.st.com/static-files/6e2389e7-3503-485d-b9d7-65df0e71d26f"}, "summary": "First in world to produce 200mm SiC wafers (2021); feeds ST's vertically integrated power business; transforms Sweden into critical SiC-substrate hub."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [16.189, 58.592]}, "properties": {"company": "STMicroelectronics (SiC, ex-Norstel)", "fab_name": "Norrkoping SiC substrate & epitaxy plant (STMicroelectronics Silicon Carbide AB, ex-Norstel)", "site_city": "Norrkoping", "country": "Sweden", "in_eu": true, "lat": 58.592, "lon": 16.189, "coord_precision": "site", "product_types": ["SiC substrates", "SiC boules / bulk crystal", "SiC epiwafers", "conductive and semi-insulating SiC wafers", "power", "compound semiconductor"], "wafer_size_mm": [150, 200], "process_nodes": ["SiC single-crystal bulk growth", "150mm 4H-SiC bare substrate", "150mm 4H-SiC CVD epitaxy", "200mm SiC bulk wafer (prototyping/early production, first July 2021)", "conductive & semi-insulating 4H-SiC substrates"], "finest_node": "200mm 4H-SiC bulk substrate/epiwafer (materials, not a device node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Ex-Norstel AB (spun off from Linkoping Univ. 2005), fully acquired by ST Dec 2019 (~$137.5M); now ST Silicon Carbide AB. Makes conductive & semi-insulating 4H-SiC substrates plus CVD epiwafers; made ST's first 200mm SiC bulk wafers (prototyping) July 2021. Crystal-growth/substrate + 200mm R&D hub, no device front-end fab. 2025 restructuring shifted 200mm SiC device output to Catania; Norrkoping not flagged for closure.", "sources": ["https://www.semiconductor-today.com/news_items/2019/dec/st-031219.shtml", "https://www.globenewswire.com/news-release/2021/07/27/2269487/0/en/STMicroelectronics-Manufactures-First-200mm-Silicon-Carbide-Wafers.html", "https://newsroom.st.com/media-center/press-item.html/t4380.html", "https://www.st.com/content/st_com/en/about/innovation-and-technology/sic.html", "https://evertiq.com/design/50377", "https://en.wikipedia.org/wiki/STMicroelectronics"], "country_iso": "SE", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "stmicroelectronics-sic-ex-norstel__norrkoping", "id": "stmicroelectronics-sic-e-norrkoping-200mm-sic", "year_opened": 2021, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Ostergotland", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "STMicroelectronics N.V.", "owner_country_iso": "CH", "ownership_type": "public", "note": "Norstel AB fully acquired by STMicroelectronics N.V. in 2019-2020 (55% in Feb 2019, remaining 45% exercised, USD 137.5M total); now operates as STMicroelectronics SiC AB. STMicroelectronics N.V. is publicly listed on Paris, Milan, and New York exchanges. Strategic shareholder block STMicroelectronics Holding N.V. (27.5%) jointly held by Italian state and Bpifrance; remaining 72.5% in public float.", "source": "https://investors.st.com/static-files/812b421e-0611-488f-93f7-113308b5df7c", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.marklines.com/en/news/233469"}, "summary": "Crystal-growth and SiC-substrate specialist acquired by ST; produced first 200mm SiC bulk wafers in 2021; now a key material hub for ST's power ecosystem."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [8.4988, 47.3577]}, "properties": {"company": "Coherent (ex-II-VI)", "fab_name": "Coherent Zurich III-V laser fab (II-VI Laser Enterprise GmbH)", "site_city": "Zurich", "country": "Switzerland", "in_eu": false, "lat": 47.3577, "lon": 8.4988, "coord_precision": "site", "product_types": ["VCSEL", "edge-emitting lasers", "980nm pump lasers", "high-power laser diodes", "GaAs optoelectronics", "InP optoelectronics", "photonics"], "wafer_size_mm": [150], "process_nodes": ["6-inch (150mm) GaAs VCSEL", "GaAs high-power laser diode", "InP/InGaAs 980nm pump laser"], "finest_node": "III-V compound semiconductor (GaAs/InP epi + wafer fab); 6-inch GaAs platform; no CMOS node", "status": "operational", "category": "compound_semi", "confidence": "high", "expected_production_year": null, "notes": "Front-end III-V fab (in-house GaAs/InP epitaxy + wafer fab) at Binzstrasse 17. Successor to Uniphase/Avalon->Bookham->Oclaro Zurich laser business; makes 980nm pumps, high-power diodes, VCSELs. Switzerland, not in EU.", "sources": ["https://www.coherent.com/company/locations/emea/switzerland/coherent-zurich", "https://www.semiconductor-today.com/news_items/2015/aug/iivi_130815.shtml", "https://www.laserfocusworld.com/fiber-optics/article/16547372/swiss-based-diode-laser-fab-opens-new-chapter-for-uniphase", "https://search.ch/tel/zuerich/binzstrasse-17/ii-vi-laser-enterprise-gmbh", "https://www.coherent.com/content/dam/coherent/site/en/documents/investors/annual-filings/2018/ii-vi-fy2018-annual-report.pdf"], "country_iso": "CH", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Power", "Substrate/epi"], "site_id": "coherent-ex-ii-vi__zurich", "id": "coherent-ex-ii-vi-zurich-150mm-inp", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Canton of Zurich", "last_verified": "2026-06", "owner": {"parent": "Coherent Corp (NYSE: COHR) — Coherent Corp is the direct legal parent for the European fab estate; European entities sit under intermediate holding companies (e.g., Coherent (UK) Holdings B Ltd. now holds II-VI Laser Enterprise GmbH, Zurich, replacing II-VI Holdings B.V. as of 24 Jun 2024 per Swiss commercial register — an internal restructuring, not a change of ultimate control)", "ultimate_owner": "Coherent Corp (NYSE: COHR), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "US public company; Bain Capital holds a preferred-equity stake from the 2022 Coherent acquisition financing (exact current % not publicly confirmed)", "source": "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/aerospace-defense/britain-buys-semiconductor-factory-secure-supply-military-2024-09-27/"}, "summary": "Swiss III-V laser fab carrying decades of VCSEL and pump-laser heritage, supplying optoelectronics to datacom and industrial sensing."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.998, 47.0131]}, "properties": {"company": "EM Microelectronic (Swatch)", "fab_name": "EM Microelectronic Marin Front-End Fab", "site_city": "Marin-Epagnier (La Tene), Neuchatel", "country": "Switzerland", "in_eu": false, "lat": 47.0131, "lon": 6.998, "coord_precision": "city", "product_types": ["ultra-low-power microcontrollers", "analog", "RFID/NFC", "smart card ICs", "LCD/display drivers", "optical sensors", "sensor interfaces", "power management", "energy harvesting", "automotive"], "wafer_size_mm": [150], "process_nodes": ["180nm (EMALP018 ultra-low-power CMOS, 4/5 metal layers)"], "finest_node": "180nm (EMALP018 CMOS)", "status": "operational", "category": "volume_specialty", "confidence": "medium", "expected_production_year": null, "notes": "EM's only front-end silicon fab; in-house ultra-low-power CMOS at 0.18um (EMALP018), offered as foundry/MPW via CMP. EM also uses external foundries; wafer diameter not publicly disclosed (150mm assumed for this legacy specialty line).", "sources": ["https://www.swatchgroup.com/en/companies-brands/electronic-systems/em-microelectronic", "https://www.emmicroelectronic.com/news_and_pressrelease/cmp-provides-new-mpw-access-em-microelectronic", "https://en.wikipedia.org/wiki/EM_Microelectronic", "https://www.emmicroelectronic.com/welcome", "https://www.emmicroelectronic.com/about/overview-and-positioning"], "country_iso": "CH", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 150, "tags": ["Analog/Mixed-signal", "Automotive", "Foundry-services", "MCU", "Power", "RF", "Sensors", "Smartcard/Secure"], "site_id": "em-microelectronic-swatch__marin-epagnier-la-tene-neuchatel", "id": "em-microelectronic-swatc-marin-epagnier-l-150mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Neuchatel", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "The Swatch Group Ltd.", "owner_country_iso": "CH", "ownership_type": "private", "note": "Fully-owned subsidiary of Swatch Group since 1985; located in Marin-Epagnier, Switzerland; part of Swatch Group's Electronic Systems division; no other shareholders", "source": "https://www.swatchgroup.com/en/companies-brands/electronic-systems/em-microelectronic", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "EM's proprietary ultra-low-power 0.18µm CMOS platform foundry; enables in-house optimization for power-critical designs in RFID, wearables, and battery-free applications."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [8.183, 47.391]}, "properties": {"company": "Hitachi Energy", "fab_name": "Lenzburg Power Semiconductor Front-End Fab (ex-ABB Semiconductors)", "site_city": "Lenzburg", "country": "Switzerland", "in_eu": false, "lat": 47.391, "lon": 8.183, "coord_precision": "site", "product_types": ["power", "IGBT", "MOSFET", "IGCT", "GTO", "thyristor", "diode", "BiMOS", "SiC"], "wafer_size_mm": [150], "process_nodes": ["high-power Si BiMOS device process (IGBT/MOSFET, 1.2 kV to >6.5 kV)", "SiC BiMOS chip front-end (from SiC epi-wafers)", "bipolar power device process (GTO/IGCT/thyristor/diode)"], "finest_node": "high-power Si/SiC device process (no CMOS litho node; IGBT/IGCT/BiMOS feature-size process)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Fabrikstrasse 3, Lenzburg (ex-ABB Semiconductors). Front-end fab making BiMOS Si and SiC chips (1.2-6.5+ kV) plus module/bipolar fabs on site; SiC e-mobility line inaugurated 2023. Portfolio: GTO/IGBT/IGCT/thyristor/diode for HVDC, traction, industry. 150mm is the ABB-era documented diameter.", "sources": ["https://events.vtools.ieee.org/m/376208", "https://www.hitachienergy.com/us/en/products-and-solutions/semiconductors", "https://www.hitachienergy.com/us/en/news-and-events/features/2023/05/inauguration-new-silicon-carbide-e-mobility-production-line-at-hitachi-energy-semiconductors-in-lenzburg", "https://www.hitachienergy.com/us/en/careers/open-jobs/details/JID3-194174"], "country_iso": "CH", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Power", "SiC", "Substrate/epi"], "site_id": "hitachi-energy__lenzburg", "id": "hitachi-energy-lenzburg-150mm-sic", "year_opened": 2023, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Aargau", "last_verified": "2026-06", "owner": {"parent": "Hitachi, Ltd.", "ultimate_owner": "Hitachi, Ltd.", "owner_country_iso": "JP", "ownership_type": "public", "note": "100% owned by Hitachi, Ltd. (Tokyo Stock Exchange: 6501) since December 28, 2022 when Hitachi completed acquisition of ABB's remaining 19.9% stake; Hitachi originally acquired 80.1% of ABB's Power Grids business (now Hitachi Energy) on July 1, 2020; diversified public shareholder base includes institutional investors (~43.1%) and general public (~52.8%)", "source": "https://www.hitachienergy.com/us/en/company/company-profile/our-story", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Historic Swiss power-semiconductor factory pioneering SiC e-mobility solutions; serves HVDC and traction markets via 25+ years of ABB heritage."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [8.183, 47.391]}, "properties": {"company": "Hitachi Energy", "fab_name": "Hitachi Energy 300mm IGBT Wafer R&D / Pilot Line", "site_city": "Lenzburg", "country": "Switzerland", "in_eu": false, "lat": 47.391, "lon": 8.183, "coord_precision": "site", "product_types": ["power", "IGBT"], "wafer_size_mm": [300], "process_nodes": ["300mm IGBT power device process (first-wafer / capacity milestone)"], "finest_node": "300mm IGBT (R&D / capacity milestone, not confirmed volume)", "status": "rd_pilot", "expected_production_year": "unknown", "category": "rd_pilot", "confidence": "low", "notes": "March 2024 'first 300mm wafer for IGBT' framed as a technology/capacity milestone, not announced volume production. Line location not publicly confirmed as Lenzburg; assigned there as the only documented power-fab site. Distinct 300mm line kept separate from the operational 150mm fab.", "sources": ["https://www.hitachienergy.com/us/en/news-and-events/features/2024/03/hitachi-energy-advances-its-semiconductor-technology-with-first-300-mm-wafer-for-igbt", "https://powerelectronicsmagazine.net/article/118846/Hitachi_Energy_announces_first_300mm_IGBT_wafer", "https://www.hitachienergy.com/us/en/careers/open-jobs/details/JID3-194174"], "country_iso": "CH", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 300, "tags": ["Power"], "site_id": "hitachi-energy__lenzburg", "id": "hitachi-energy-lenzburg-300mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Aargau", "last_verified": "2026-06", "owner": {"parent": "Hitachi, Ltd.", "ultimate_owner": "Hitachi, Ltd.", "owner_country_iso": "JP", "ownership_type": "public", "note": "100% owned by Hitachi, Ltd. (Tokyo Stock Exchange: 6501) since December 28, 2022 when Hitachi completed acquisition of ABB's remaining 19.9% stake; Hitachi originally acquired 80.1% of ABB's Power Grids business (now Hitachi Energy) on July 1, 2020; diversified public shareholder base includes institutional investors (~43.1%) and general public (~52.8%)", "source": "https://www.hitachienergy.com/us/en/company/company-profile/our-story", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Hitachi Energy's 2024 debut 300mm IGBT process line (distinct from its operational 150mm fab) represents power-semiconductor foundry infrastructure advancement toward higher capacity and integration."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.5668, 46.5191]}, "properties": {"company": "LIGENTEC", "fab_name": "LIGENTEC HQ / R&D and cleanroom (EPFL Innovation Park, Building L)", "site_city": "Ecublens (Lausanne)", "country": "Switzerland", "in_eu": false, "lat": 46.5191, "lon": 6.5668, "coord_precision": "site", "product_types": ["photonics", "silicon nitride PIC", "SiN photonic integrated circuits", "TFLN photonics"], "wafer_size_mm": [200], "process_nodes": ["low-loss SiN PIC platform (R&D/prototyping)", "lithography/dry etch/PVD/CVD lab processes"], "finest_node": "low-loss SiN PIC platform (200mm process developed here, volume-run at X-FAB)", "status": "rd_pilot", "category": "rd_pilot", "expected_production_year": null, "confidence": "low", "notes": "Corporate HQ and technology center at EPFL Innovation Park with in-house lab/cleanroom and electro-optical test; no full in-house wafer-production line. Volume manufacturing is fabless via X-FAB 200mm. Switzerland, so not in EU.", "sources": ["https://www.ligentec.com/about-us-2/", "https://www.ligentec.com/about-us-2/news/ligentec-and-x-fab-collaboration/", "https://www.ligentec.com/wp-content/uploads/2020/12/2012-Fabrication-Engineer.pdf", "https://www.photondelta.com/news/ligentec-photonic-ambitions-grow-beyond-silicon-nitride/", "https://be.linkedin.com/company/ligentec"], "country_iso": "CH", "status_group": "rd", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Photonics/Opto"], "site_id": "ligentec__ecublens-lausanne", "id": "ligentec-ecublens-lausann-200mm", "year_opened": 2016, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Vaud", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Private; institutional investors, no controlling holder", "owner_country_iso": "CH", "ownership_type": "private", "note": "Private company spin-off from EPFL (École Polytechnique Fédérale de Lausanne) in 2016. Dispersed institutional investor base with founder Michael Geiselmann; no controlling parent publicly disclosed. — Ownership detail: Multiple institutional investors (EIC Fund, Venture Kick, EPFL, Fondation pour l'Innovation Technologique, ESA BIC Switzerland) with no single controlling shareholder disclosed", "source": "https://www.ligentec.com/about-us-2/", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://pitchbook.com/profiles/company/186024-25"}, "summary": "Swiss photonics fabless specialist at EPFL, designing silicon-nitride photonic integrated circuits and outsourcing volume production to X-FAB, keeping R&D rooted in Lausanne."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [6.641, 46.778]}, "properties": {"company": "Safran Timing", "fab_name": "Yverdon-les-Bains MEMS Fab (Colibrys / Safran Timing Technologies SA)", "site_city": "Yverdon-les-Bains", "country": "Switzerland", "in_eu": false, "lat": 46.778, "lon": 6.641, "coord_precision": "city", "product_types": ["MEMS", "accelerometers", "inertial sensors", "vibration sensors", "high-temperature sensors"], "wafer_size_mm": [150], "process_nodes": ["MEMS bulk micromachining (wet + dry Si etching, DRIE)"], "finest_node": "MEMS (no CMOS node; 6-inch / 150mm bulk-micromachined silicon MEMS line)", "status": "operational", "category": "foundry", "confidence": "high", "expected_production_year": null, "notes": "Legacy Colibrys SA (joined Safran 2012). Proprietary 6-inch (150mm) MEMS wafer foundry at Av. des Sciences 13, Yverdon; bulk micromachining/DRIE. Swiss entity merged into Safran Timing Technologies SA (2025). Offers MEMS foundry services.", "sources": ["https://www.safran-group.com/products-services/safran-sensing-technologies-foundry-services", "https://www.safran-group.com/locations/switzerland/safran-timing-technologies-2077425", "https://www.colibrys.com/foundry-services/", "https://www.moneyhouse.ch/en/company/safran-timing-technologies-sa-5481036961", "https://www.aeroindustry.ch/safran-colibrys-mems-sensors/", "https://www.northdata.com/Safran%20Sensing%20Technologies%20Switzerland%20SA,%20Yverdon-les-Bains/CHE-112.160.970"], "country_iso": "CH", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Foundry-services", "MEMS", "Sensors"], "site_id": "safran-timing__yverdon-les-bains", "id": "safran-timing-yverdon-les-bain-150mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 60, "region": "Vaud", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "Safran S.A.", "owner_country_iso": "FR", "ownership_type": "public", "note": "Subsidiary of Safran Electronics & Defense within Safran Group. Based in Neuchâtel, Switzerland. June 2025: merged with Safran Sensing Technologies Switzerland (formerly Colibrys); both held by same parent. Safran S.A. listed on Euronext Paris with ~11-12% French state, ~5-8% employees, ~80% public float.", "source": "https://www.safran-group.com/companies/safran-timing-technologies", "confidence": "high", "verified": null, "as_of": "2026-07-17", "source2": "https://www.pappers.ch/en/company/safran-timing-technologies-sa-100514535"}, "summary": "Switzerland's MEMS foundry for bulk-micromachined accelerometers and vibration sensors; merged with Colibrys in 2025, part of Safran's sensing-technology consolidation."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-1.5826, 54.6206]}, "properties": {"company": "Coherent (ex-II-VI)", "fab_name": "Newton Aycliffe GaAs VCSEL fab (DIVESTED to Octric Semiconductors / UK MoD)", "site_city": "Newton Aycliffe, County Durham", "country": "United Kingdom", "in_eu": false, "lat": 54.6206, "lon": -1.5826, "coord_precision": "site", "product_types": ["VCSEL", "GaAs VCSELs", "3D sensing VCSELs / optoelectronics", "GaAs RF/defence", "compound semiconductor wafer fab"], "wafer_size_mm": [150], "process_nodes": ["150mm (6-inch) GaAs wafer fabrication", "GaAs VCSEL process (3D-sensing VCSELs)"], "finest_node": "150mm GaAs VCSEL (compound-semi process, not CMOS node)", "status": "cancelled", "category": "compound_semi", "confidence": "high", "expected_production_year": null, "notes": "No longer a Coherent fab. 310,000 sq ft 6-inch GaAs VCSEL fab (built early-90s by Fujitsu/later Kaiam; II-VI acquired 2017) at Aycliffe Business Park. Sold by Coherent in 2024 to UK government/MoD for reported ~GBP20M; now Octric Semiconductors UK. UK, not in EU. Retained only as a former/divested footprint record.", "sources": ["https://www.semiconductor-today.com/news_items/2024/sep/coherent-270924.shtml", "https://optics.org/news/coherent-sells-wafer-fab-to-uks-ministry-of-defence-for-reported-andpound20m", "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "https://www.theregister.com/2024/09/30/uk_mod_gets_into_chipmaking/", "https://questions-statements.parliament.uk/written-statements/detail/2024-10-07/hcws102", "https://en.wikipedia.org/wiki/Coherent,_Inc."], "country_iso": "GB", "status_group": "dead", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "RF"], "site_id": "coherent-ex-ii-vi__newton-aycliffe-county-durham", "id": "coherent-ex-ii-vi-newton-aycliffe--150mm-gaas", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "County Durham", "last_verified": "2026-06", "owner": {"parent": "Coherent Corp (NYSE: COHR) — Coherent Corp is the direct legal parent for the European fab estate; European entities sit under intermediate holding companies (e.g., Coherent (UK) Holdings B Ltd. now holds II-VI Laser Enterprise GmbH, Zurich, replacing II-VI Holdings B.V. as of 24 Jun 2024 per Swiss commercial register — an internal restructuring, not a change of ultimate control)", "ultimate_owner": "Coherent Corp (NYSE: COHR), dispersed public float", "owner_country_iso": "US", "ownership_type": "public", "note": "US public company; Bain Capital holds a preferred-equity stake from the 2022 Coherent acquisition financing (exact current % not publicly confirmed)", "source": "https://www.coherent.com/news/press-releases/coherent-announces-sale-of-uk-mfg-facility", "confidence": "high", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/aerospace-defense/britain-buys-semiconductor-factory-secure-supply-military-2024-09-27/"}, "summary": "No longer active as a Coherent fab; sold to UK Ministry of Defence in 2024 and now operates as Octric Semiconductors for national security applications."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-4.7833, 55.9333]}, "properties": {"company": "Diodes Incorporated", "fab_name": "Greenock wafer fab (GFAB)", "site_city": "Greenock", "country": "United Kingdom", "in_eu": false, "lat": 55.9333, "lon": -4.7833, "coord_precision": "city", "product_types": ["analog", "discrete", "power", "analog IC", "mixed-signal CMOS", "BiCMOS"], "wafer_size_mm": [150, 200], "process_nodes": ["mature-node analog", "CMOS", "BiCMOS", "discrete", "ex-TI/National Semiconductor analog process"], "finest_node": "mature analog/CMOS/BiCMOS (no named node disclosed)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Acquired from Texas Instruments (announced 2018, closed Q1 2019); legacy National Semiconductor analog fab. Runs both 150mm and 200mm lines for analog, CMOS, BiCMOS and discrete. ~300 staff, Larkfield Industrial Estate.", "sources": ["https://www.diodes.com/careers/list/21/greenock-scotland", "https://www.diodes.com/about/news/press-releases/diodes-incorporated-completes-acquisition-of-texas-instruments-greenock-scotland-wafer-fabrication-facility-and-operations", "https://atreg.com/case-studies/atreg-helps-ti-dispose-of-200mm-150mm-fab-in-greenock-scotland-uk/", "https://investor.diodes.com/investor-relations/corporate-profile", "https://www.diodes.com/about/news/press-releases/scottish-enterprise-grant-helps-diodes-incorporated-grow-for-the-future-in-greenock"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Analog/Mixed-signal", "Discrete", "Power"], "site_id": "diodes-incorporated__greenock", "id": "diodes-incorporated-greenock-200mm", "year_opened": 2019, "year_first_production": null, "investment_eur_million": null, "employees": 300, "region": "Inverclyde (Scotland)", "last_verified": "2026-06", "owner": {"parent": "Diodes Incorporated (NASDAQ: DIOD)", "ultimate_owner": "Diodes Incorporated", "owner_country_iso": "US", "ownership_type": "public", "note": "UK operations (Oldham, Greenock) are 100% subsidiaries of NASDAQ-listed parent; no corporate parent above Diodes Incorporated", "source": "https://investor.diodes.com/investor-relations/corporate-profile", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 21666, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "has a potential capacity of up to 21,666 wafer starts or 256,000 8\" equivalent layers per month, depending on product mix", "source": "https://www.diodes.com/about/news/press-releases/diodes-incorporated-completes-acquisition-of-texas-instruments-greenock-scotland-wafer-fabrication-facility-and-operations", "year": 2019, "verified": "unreachable", "as_of": "2026-07-17"}, "summary": "Scotland's analog and discrete wafer factory acquired from Texas Instruments in 2019, running mature processes for global markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-2.1294, 53.5266]}, "properties": {"company": "Diodes Incorporated", "fab_name": "Oldham wafer fab (OFAB)", "site_city": "Oldham", "country": "United Kingdom", "in_eu": false, "lat": 53.5266, "lon": -2.1294, "coord_precision": "city", "product_types": ["discrete", "power", "analog", "MOSFET", "bipolar (BJT)", "TVS protection", "SBR rectifiers", "analog IC"], "wafer_size_mm": [150], "process_nodes": ["micron-scale analog/power", "bipolar (BJT)", "MOSFET", "TVS", "SBR (Super Barrier Rectifier)", "analog IC"], "finest_node": "micron-scale analog/power (no specific geometry published)", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Acquired with Zetex plc in 2008. Diodes' own 150mm fab running discrete BJT, MOSFET, TVS, SBR and analog IC processes; 200+ manufacturing staff. No CMOS node marketed.", "sources": ["https://www.diodes.com/careers/list/22/oldham-england", "https://investor.diodes.com/investor-relations/corporate-profile", "https://www.diodes.com/assets/Sustainability-Site-Assets/Diodes-Incorporated-Sustainability-Report.pdf", "https://investor.diodes.com/static-files/325aaa71-9de9-40ff-bb01-26370757c86f", "https://matrixbcg.com/blogs/brief-history/diodes"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Analog/Mixed-signal", "Discrete", "Power"], "site_id": "diodes-incorporated__oldham", "id": "diodes-incorporated-oldham-150mm", "year_opened": 2008, "year_first_production": null, "investment_eur_million": null, "employees": 200, "region": "Greater Manchester (England)", "last_verified": "2026-06", "owner": {"parent": "Diodes Incorporated (NASDAQ: DIOD)", "ultimate_owner": "Diodes Incorporated", "owner_country_iso": "US", "ownership_type": "public", "note": "UK operations (Oldham, Greenock) are 100% subsidiaries of NASDAQ-listed parent; no corporate parent above Diodes Incorporated", "source": "https://investor.diodes.com/investor-relations/corporate-profile", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Diodes' legacy discrete-power foundry inherited from Zetex; high-volume producer of BJTs, MOSFETs, and protection devices for consumer and automotive power rails."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-3.1148, 51.5114]}, "properties": {"company": "IQE", "fab_name": "IQE Cardiff (St Mellons) — HQ epitaxy & Innovation Centre", "site_city": "Cardiff (St Mellons)", "country": "United Kingdom", "in_eu": false, "lat": 51.5114, "lon": -3.1148, "coord_precision": "site", "product_types": ["compound semiconductor epiwafers", "GaAs epitaxy", "GaN epitaxy", "InP epitaxy", "SiGe epitaxy", "VCSEL epi", "RF/GaAs", "photonics", "power", "microLED RGB epi"], "wafer_size_mm": [100, 150, 200], "process_nodes": ["MOCVD III-V epitaxy", "MBE III-V epitaxy", "Si/SiGe epitaxy", "150mm (6-inch) InP epi", "200mm (8-inch) GaAs/GaN epi"], "finest_node": "200mm GaAs/GaN MOCVD epiwafer (epitaxy, not a device node)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "Pascal Close, St Mellons CF3 0LW. IQE global HQ (founded 1988) and Innovation Centre; first MOCVD site. Being shifted toward R&D/innovation as South Wales volume consolidates into Newport; adjacent legacy IQE Silicon ops exited 2025.", "sources": ["https://www.iqep.com/about-us/sites/", "https://en.wikipedia.org/wiki/IQE", "https://www.iqep.com/media/press-releases/2026/full-year-2025-results/", "https://www.iqep.com/about-us/heritage/", "https://www.investegate.co.uk/announcement/rns/iqe--iqe/iqe-plc-fy-2024-financial-results/8873881", "https://www.cardiffcapitalregion.wales/project-hub/the-foundry/"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["GaN", "Photonics/Opto", "Power", "RF", "Substrate/epi"], "site_id": "iqe__cardiff-st-mellons", "id": "iqe-cardiff-st-mello-200mm-gan", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 156, "region": "Wales (Cardiff, South Wales)", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "GB", "ownership_type": "public", "note": "Public company listed on London AIM; ownership ~80-85% institutional investors with no single controlling shareholder; largest holders include Artisan Partners, Lombard Odier Asset Management, MACOM Technology Solutions", "source": "https://www.iqep.com/media/press-releases/2026/conclusion-of-strategic-review/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Compound-semiconductor epitaxy headquarters shifting from volume production to innovation-focused R&D as the industry consolidates southward."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-0.7172, 52.0633]}, "properties": {"company": "IQE", "fab_name": "IQE Milton Keynes (Tongwell) — Wafer Technology III-V substrates & epitaxy", "site_city": "Milton Keynes (Tongwell)", "country": "United Kingdom", "in_eu": false, "lat": 52.0633, "lon": -0.7172, "coord_precision": "site", "product_types": ["compound semiconductor epiwafers", "GaAs substrates", "InP substrates", "GaAs epitaxy", "InP epitaxy", "III-V epi", "infrared", "GaSb", "InSb", "IR imaging materials"], "wafer_size_mm": [100, 150], "process_nodes": ["III-V MOCVD/MBE epitaxy", "InP/GaAs epi", "Compound-semi substrate/boule growth (GaSb / InSb / GaAs / InP)", "Epitaxial IR-material growth"], "finest_node": "III-V (GaAs/InP) epiwafer & substrate growth (no device node; substrates/epiwafers only)", "status": "operational", "expected_production_year": null, "category": "substrate_epi", "confidence": "medium", "notes": "34 Maryland Road, Tongwell, Milton Keynes MK15 8HJ ('IQE Wafer Technology', ex-Wafer Technology Ltd). Combines III-V (GaAs/InP) substrate/boule growth plus GaSb/InSb infrared lines and MOCVD/MBE epitaxy at one site. Active per IQE 2025 sites page; not part of the 2025 South Wales silicon-site exit.", "sources": ["https://www.iqep.com/about-us/sites/", "https://en.wikipedia.org/wiki/IQE", "https://www.iqep.com/about-us/heritage/", "https://www.investegate.co.uk/announcement/rns/iqe--iqe/iqe-plc-fy-2024-financial-results/8873881", "https://www.linkedin.com/company/iqe", "https://www.iqep.com/media/fsde2tkd/iqe-factsheet-october-2020.pdf"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 150, "tags": ["Photonics/Opto", "Substrate/epi"], "site_id": "iqe__milton-keynes-tongwell", "id": "iqe-milton-keynes-to-150mm-inp", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Buckinghamshire (England)", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "GB", "ownership_type": "public", "note": "Public company listed on London AIM; ownership ~80-85% institutional investors with no single controlling shareholder; largest holders include Artisan Partners, Lombard Odier Asset Management, MACOM Technology Solutions", "source": "https://www.iqep.com/media/press-releases/2026/conclusion-of-strategic-review/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Combining III-V boule growth and MOCVD/MBE epitaxy under one roof, IQE Wafer Technology supplies GaAs/InP substrates and infrared materials (GaSb/InSb) to Europe's optoelectronics and sensor sectors."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-3.0464, 51.5556]}, "properties": {"company": "IQE", "fab_name": "IQE Newport \"Mega Foundry\" (Imperial Park / Celtic Way, Coedkernew)", "site_city": "Newport (Coedkernew, Imperial Park)", "country": "United Kingdom", "in_eu": false, "lat": 51.5556, "lon": -3.0464, "coord_precision": "site", "product_types": ["compound semiconductor epiwafers", "GaAs epitaxy", "InP", "GaN", "GaN-on-Si", "GaN-on-SiC", "VCSEL epi", "photonics", "RF", "power", "3D sensing optical epi"], "wafer_size_mm": [150, 200], "process_nodes": ["high-volume MOCVD III-V epitaxy", "MBE epitaxy", "200mm (8-inch) GaAs VCSEL epi", "GaAs epi (150mm, reactors upgradable to 200mm)", "InP epi", "GaN epi (GaN-on-Si, GaN-on-SiC)"], "finest_node": "200mm GaAs MOCVD epiwafer (epitaxy, not a device node)", "status": "expanding", "expected_production_year": null, "category": "substrate_epi", "confidence": "high", "notes": "~375,000 sq ft 'Mega Foundry' at Celtic Way, Imperial Park, Coedkernew/Marshfield NP10; occupied since 2017, owned by CSC Foundry Ltd (Cardiff Capital Region City Deal SPV) on 11-yr lease with option to acquire. Space for ~100 MOCVD tools; consolidation target for South Wales volume; aim to be world's largest CS epi-foundry.", "sources": ["https://www.iqep.com/about-us/sites/", "https://www.cardiffcapitalregion.wales/project-hub/the-foundry/", "https://www.gov.wales/worlds-first-semiconductor-cluster-comes-wales-thanks-welsh-government", "https://www.iqep.com/media/press-releases/2026/full-year-2025-results/", "https://www.eenewseurope.com/en/iqe-has-vision-for-billion-pound-foundry-in-newport/", "https://results2021.ref.ac.uk/impact/9ea19204-a27a-4b42-9446-7d173a419fd6?page=1"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Foundry-services", "GaN", "Photonics/Opto", "Power", "RF", "SiC", "Substrate/epi"], "site_id": "iqe__newport-coedkernew-imperial-park", "id": "iqe-newport-coedkern-200mm-sic", "year_opened": 2019, "year_first_production": null, "investment_eur_million": 75.0, "employees": 70, "region": "Wales (Newport, South Wales)", "last_verified": "2026-06", "owner": {"parent": null, "ultimate_owner": "MULTI", "owner_country_iso": "GB", "ownership_type": "public", "note": "Public company listed on London AIM; ownership ~80-85% institutional investors with no single controlling shareholder; largest holders include Artisan Partners, Lombard Odier Asset Management, MACOM Technology Solutions", "source": "https://www.iqep.com/media/press-releases/2026/conclusion-of-strategic-review/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "World's largest compound-semiconductor epitaxy campus under development in South Wales; IQE is consolidating GaAs, GaN, and InP epi production for global RF, power, and photonics markets."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-2.1154, 53.3776]}, "properties": {"company": "Nexperia", "fab_name": "Nexperia Manchester (Hazel Grove) TrenchMOS wafer fab", "site_city": "Stockport (Hazel Grove), Greater Manchester", "country": "United Kingdom", "in_eu": false, "lat": 53.3776, "lon": -2.1154, "coord_precision": "site", "product_types": ["power", "power MOSFET", "TrenchMOS power discrete", "discretes"], "wafer_size_mm": [150, 200], "process_nodes": ["150mm TrenchMOS power MOSFET", "200mm TrenchMOS power MOSFET"], "finest_node": "200mm mature TrenchMOS silicon power MOSFET; specific micron geometry not publicly disclosed", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "Nexperia's second European front-end fab (Pepper Rd, Hazel Grove, Stockport SK7 5BJ). Lineage Mullard>Philips>NXP>Nexperia; dedicated TrenchMOS power-MOSFET fab on 6\"+8\" lines, ~1,100 staff, >50yr legacy. Distinct from divested Newport (Wales) fab. Subject to 2025 UK/Wingtech ownership scrutiny; remains operational.", "sources": ["https://www.nexperia.com/about/worldwide-locations/manufacturing", "https://en.wikipedia.org/wiki/Nexperia", "https://eenewseurope.com/news/nxp-spinout-nexperia-upgrades-uk-fab-part-power-expansion", "https://www.vizionapi.com/blog/the-nexperia-seizure-europes-watershed-moment-in-the-global-semi-conductor-war"], "country_iso": "GB", "status_group": "live", "finest_node_nm": null, "max_wafer_mm": 200, "tags": ["Discrete", "Power"], "site_id": "nexperia__stockport-hazel-grove-greater-manchester", "id": "nexperia-stockport-hazel--200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": 1100, "region": "Greater Manchester (North West England)", "last_verified": "2026-06", "owner": {"parent": "Wingtech Technology Co., Ltd. (Shanghai-listed, SHSE:600745) — legal/equity owner of Nexperia B.V.; however, voting and governance rights over Wingtech's Nexperia shares have been suspended and placed under independent Dutch court-appointed trustees since Sept/Oct 2025", "ultimate_owner": "Wingtech Technology Co., Ltd.", "owner_country_iso": "CN", "ownership_type": "public", "note": "Wingtech Technology (CN) parent; Dutch government invoked the Goods Availability Act (autumn 2025, order public October 2025) placing Nexperia under control measures — ownership vs. operational control currently diverge", "source": "https://www.reuters.com/world/china/netherlands-looks-move-past-nexperia-dispute-with-china-dutch-minister-says-2026-07-07/", "confidence": "medium", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.reuters.com/business/retail-consumer/dutch-court-orders-investigation-into-nexperia-upholds-previous-decisions-2026-02-11/"}, "summary": "Lineage Mullard→Philips→NXP→Nexperia, 50+ years of power-MOSFET legacy on 6\"+8\" lines; subject to 2025 UK/Dutch ownership scrutiny after Chinese acquisition."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-4.1133, 50.4283]}, "properties": {"company": "Plessey Semiconductors", "fab_name": "Plymouth Roborough Fab", "site_city": "Plymouth (Roborough)", "country": "United Kingdom", "in_eu": false, "lat": 50.4283, "lon": -4.1133, "coord_precision": "site", "product_types": ["GaN microLED", "microdisplays", "AR/VR display engines", "compound semiconductor"], "wafer_size_mm": [150, 200], "process_nodes": ["GaN-on-Si microLED, ~8um pixel", "native red microLED (~5um chip)", "sub-5um microLED pixel pitch (demonstrated)"], "finest_node": "~2.5um microLED pixel pitch (GaN-on-Si, not a CMOS node) — exact figure unverified via CLI", "status": "operational", "expected_production_year": null, "category": "compound_semi", "confidence": "medium", "notes": "Vertically integrated GaN-on-Si microLED line (epitaxy through bonding/test). Exclusive Meta/FRL microLED dev agreement since Mar 2020. Reported Haylo Labs acquisition Aug 2025 not re-verified (post-cutoff).", "sources": ["https://www.evgroup.com/company/news/detail/ev-group-partners-with-plessey-to-drive-gan-on-silicon-monolithic-microled-technology-for-ar-applications-1555586815", "https://www.microled-info.com/plessey-semiconductor", "https://manufacturing-today.com/news/how-plessey-semiconductors-is-redefining-reality-with-the-next-generation-of-ar-and-microled-innovations/", "https://www.microledassociation.com/members/plessey-semiconductors/", "https://vita.militaryembedded.com/1351-a-new-start-plessey-semiconductors/", "https://uk.linkedin.com/company/plessey-semiconductors"], "country_iso": "GB", "status_group": "live", "finest_node_nm": 2500.0, "max_wafer_mm": 200, "tags": ["GaN", "Photonics/Opto", "Substrate/epi"], "site_id": "plessey-semiconductors__plymouth-roborough", "id": "plessey-semiconductors-plymouth-roborou-200mm-gan", "year_opened": 2010, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "Devon", "last_verified": "2026-06", "owner": {"parent": "Haylo Labs Limited (UK-incorporated, direct controlling parent)", "ultimate_owner": "Haylo Labs Limited", "owner_country_iso": "GB", "ownership_type": "private", "note": "Recently acquired by Haylo Labs Limited (August 2025); increased shareholding from <75% to ≥75%, gaining control; UK NSIA order approves 100% acquisition; financed by ~$100m loan from Goertek Inc. (Hong Kong subsidiary) with contingent economic rights for Goertek if IPO/sale occurs; Goertek is lender/financier, not disclosed shareholder; no ultimate corporate parent beyond Haylo Labs identified in UK Companies House filings", "source": "https://find-and-update.company-information.service.gov.uk/company/04129612/persons-with-significant-control", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "capacity": {"value": 17000, "unit": "wafers_per_year", "provenance": "disclosed", "quote": "total site production will be unchanged from a maximum of approximately 17,000 wafers per annum", "source": "https://consult.environment-agency.gov.uk/psc/pl6-7bq-plessey-semiconductors-limited-bx1586ih-v6/supporting_documents/application-variation-v006-supporting-information-17-12-2025-318614-plessey-semiconductors-permit-variation-supporting-document-dec-25-10pdf", "year": 2025, "verified": "confirmed", "as_of": "2026-07-17"}, "summary": "UK-based GaN microLED specialist with exclusive Meta partnership; recently acquired by Haylo Labs, positioning it for AR/VR display mass production."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-1.621, 54.7475]}, "properties": {"company": "Pragmatic Semiconductor", "fab_name": "Pragmatic Park (300mm FlexIC line)", "site_city": "Durham", "country": "United Kingdom", "in_eu": false, "lat": 54.7475, "lon": -1.621, "coord_precision": "region", "product_types": ["flexible thin-film ICs (FlexIC)", "RFID", "NFC", "item-level ID", "smart packaging", "sensors", "simple logic"], "wafer_size_mm": [300], "process_nodes": ["600nm IGZO TFT NMOS (FlexIC Platform Gen 3)"], "finest_node": "600nm (0.6um min channel) IGZO metal-oxide TFT NMOS, flexible thin-film process", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "UK's first 300mm wafer fab, opened Mar 2024; operational and ramping. FlexICs built on 300mm reusable glass carrier at <=300C, released as ~30um polyimide chips. Flexible thin-film, not silicon CMOS. ~59,000 m2 campus with capacity for up to ~9 lines.", "sources": ["https://www.pragmaticsemi.com/foundry/", "https://www.pragmaticsemi.com/foundry/flexic-platform-gen-3/", "https://www.theregister.com/on-prem/2024/03/27/pragmatic-semiconductor-opens-uks-first-300mm-wafer-fab/1394147", "https://www.semiconductor-today.com/news_items/2024/mar/pragmatic-280324.shtml", "https://www.pragmaticsemi.com/pragmatic-welcomes-hrh-the-princess-royal-to-pragmatic-park-for-the-opening-of-the-uks-first-300mm-semiconductor-wafer-manufacturing-facility/"], "country_iso": "GB", "status_group": "live", "finest_node_nm": 600.0, "max_wafer_mm": 300, "tags": ["Logic", "RF", "Sensors"], "site_id": "pragmatic-semiconductor__durham", "id": "pragmatic-semiconductor-durham-300mm", "year_opened": 2024, "year_first_production": null, "investment_eur_million": 210.0, "employees": null, "region": "County Durham", "last_verified": "2026-06", "owner": {"parent": "None (standalone company, no corporate parent)", "ultimate_owner": "Pragmatic Semiconductor Limited", "owner_country_iso": "GB", "ownership_type": "private", "note": "No registrable person with significant control (PSC) or controlling shareholder; dispersed ownership among multiple investors including Cambridge Innovation Capital (former PSC ceased 18 Dec 2023), M&G Catalyst, UK Infrastructure Bank (~14.3%, largest single shareholder), Arm, Avery Dennison, Prosperity7 Ventures/Aramco, In-Q-Tel, British Patient Capital; no entity controls >25% voting rights; board includes representatives of major shareholders", "source": "https://find-and-update.company-information.service.gov.uk/company/07423954/persons-with-significant-control", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 70, "authority": "UK Infrastructure Bank (now part of the National Wealth Fund) — UK government-owned economic development bank", "instrument": "UK Infrastructure Bank investment", "decision_date": "2023-12-06", "case_id": "", "project_capex_eur_million": 210, "source": "https://www.nationalwealthfund.org.uk/news-and-publications/news/bank-announces-60-million-direct-equity-investment-to-boost-uk-supply-chain-of-semiconductors-in-the-north-east/", "note": "GBP 60m UK Infrastructure Bank (now National Wealth Fund) investment, ~EUR 70m; investment, not grant", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.businessgreen.com/news/4153744/pivotal-step-ukib-invests-gbp60m-pragmatic-semiconductor", "channel": "non_eu", "channel_label": "UK public funding"}, "summary": "UK's first 300mm fab opened 2024, pioneering flexible thin-film circuits on glass carriers for RFID, sensors and smart packaging."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-1.4527, 54.6389]}, "properties": {"company": "Pragmatic Semiconductor", "fab_name": "NETPark Fab (200mm FlexIC line, legacy)", "site_city": "Sedgefield", "country": "United Kingdom", "in_eu": false, "lat": 54.6389, "lon": -1.4527, "coord_precision": "region", "product_types": ["flexible thin-film ICs (FlexIC)", "RFID", "NFC", "item-level ID", "sensors", "simple logic"], "wafer_size_mm": [200], "process_nodes": ["600nm-class IGZO metal-oxide TFT (earlier FlexIC generation)"], "finest_node": "~600nm IGZO metal-oxide TFT, flexible thin-film process", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "low", "notes": "Pragmatic's first dedicated fab at CPI/National Centre for Printable Electronics, NETPark, Sedgefield: pilot from 2013, first 200mm line from 2018. Current operational status undisclosed in 2024-25 materials; no closure stated. Distinct facility/wafer-size line from the 300mm Pragmatic Park in Durham.", "sources": ["https://en.wikipedia.org/wiki/Pragmatic_Semiconductor", "https://www.uk-cpi.com/case-studies/pragmatic", "https://europractice-ic.com/wp-content/uploads/2023/09/Pragmatic-EUROPRACTICE-v2-2024-03-20.pdf", "https://www.theregister.com/on-prem/2024/03/27/pragmatic-semiconductor-opens-uks-first-300mm-wafer-fab/1394147", "https://www.uk-cpi.com/blog/seven-steps-from-breakthrough-to-scale-the-ingredients-behind-pragmatic-semiconductors-success"], "country_iso": "GB", "status_group": "live", "finest_node_nm": 600.0, "max_wafer_mm": 200, "tags": ["Logic", "RF", "Sensors"], "site_id": "pragmatic-semiconductor__sedgefield", "id": "pragmatic-semiconductor-sedgefield-200mm", "year_opened": null, "year_first_production": null, "investment_eur_million": null, "employees": null, "region": "County Durham", "last_verified": "2026-06", "owner": {"parent": "None (standalone company, no corporate parent)", "ultimate_owner": "Pragmatic Semiconductor Limited", "owner_country_iso": "GB", "ownership_type": "private", "note": "No registrable person with significant control (PSC) or controlling shareholder; dispersed ownership among multiple investors including Cambridge Innovation Capital (former PSC ceased 18 Dec 2023), M&G Catalyst, UK Infrastructure Bank (~14.3%, largest single shareholder), Arm, Avery Dennison, Prosperity7 Ventures/Aramco, In-Q-Tel, British Patient Capital; no entity controls >25% voting rights; board includes representatives of major shareholders", "source": "https://find-and-update.company-information.service.gov.uk/company/07423954/persons-with-significant-control", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "summary": "Pragmatic's pioneering 200mm flexible-electronics line for roll-to-roll RFID and smart-label manufacturing; bridge to printed-circuit integration."}}, {"type": "Feature", "geometry": {"type": "Point", "coordinates": [-3.0205, 51.5575]}, "properties": {"company": "Vishay Intertechnology", "fab_name": "Newport Wafer Fab (Vishay Newport Limited)", "site_city": "Newport (Duffryn), South Wales", "country": "United Kingdom", "in_eu": false, "lat": 51.5575, "lon": -3.0205, "coord_precision": "site", "product_types": ["power", "automotive", "discretes", "MOSFET", "diodes", "SiC", "GaN"], "wafer_size_mm": [200], "process_nodes": ["700nm", "350nm", "180nm", "compound-semi power processes"], "finest_node": "~180nm (legacy CMOS/power); wide-bandgap SiC/GaN under development", "status": "operational", "expected_production_year": null, "category": "volume_specialty", "confidence": "high", "notes": "28-acre site, UK's largest semiconductor fab; 200mm automotive-certified, 30k+ wafers/month. Acquired from Nexperia 6-Mar-2024 for ~$177M (renamed Vishay Newport). Power MOSFETs/diodes plus SiC/GaN R&D. 100k wpm figure is aspirational post-expansion.", "sources": ["https://ir.vishay.com/news-releases/news-release-details/vishay-intertechnology-acquires-nexperias-newport-wafer-fab-177", "https://www.globenewswire.com/news-release/2024/03/06/2841069/0/en/Vishay-Intertechnology-Acquires-Nexperia-s-Newport-Wafer-Fab-for-177-Million.html", "https://en.wikipedia.org/wiki/Vishay_Intertechnology", "https://ir.vishay.com/news-releases/news-release-details/vishay-intertechnology-acquires-nexperias-newport-wafer-fab-177/"], "country_iso": "GB", "status_group": "live", "finest_node_nm": 180.0, "max_wafer_mm": 200, "tags": ["Automotive", "Discrete", "GaN", "Power", "SiC"], "site_id": "vishay-intertechnology__newport-duffryn-south-wales", "id": "vishay-intertechnology-newport-duffryn--200mm-sic", "year_opened": null, "year_first_production": null, "investment_eur_million": 163.0, "employees": null, "region": "Wales (South Wales)", "last_verified": "2026-06", "owner": {"parent": "None (publicly listed; NYSE: VSH)", "ultimate_owner": "Zandman family (~35-45% voting control)", "owner_country_iso": "US", "ownership_type": "public", "note": "Listed on NYSE under ticker VSH; Zandman family maintains ~35-45% voting control through direct ownership, family trust, and voting trust agreements; institutional investors (BlackRock, Vanguard) hold ~91.3% of shares; operations in Germany, Italy, UK — Ownership detail: Zandman family (controlling voting power ~35-45%); public shareholders institutional/public float", "source": "https://ir.vishay.com/corporate-governance/management/", "confidence": "high", "verified": null, "as_of": "2026-07-17"}, "subsidy": {"amount_eur_million": 6, "authority": "Welsh Government (devolved administration; UK is not an EU member state, so no EC state-aid case applies)", "instrument": "National/regional grant (Welsh Government economic development funding)", "decision_date": "2024-11-27", "case_id": "", "project_capex_eur_million": 61.2, "source": "https://www.gov.wales/51-million-newport-investment-latest-chapter-wales-compound-semiconductor-success-story", "note": "GBP 5m Welsh Government funding, ~EUR 6m", "verified": "confirmed", "as_of": "2026-07-17", "source2": "https://www.bbc.com/news/articles/c3wqvl38l2zo", "channel": "non_eu", "channel_label": "UK public funding"}, "capacity": {"value": 30000, "unit": "wafer_starts_per_month", "provenance": "disclosed", "quote": "an automotive-certified, 200mm semiconductor wafer fab with capacity to produce more than 30,000 wafers per month", "year": 2024, "verified": "confirmed", "as_of": "2026-07-17", "source_note": "Vishay Intertechnology acquisition release, ir.vishay.com/news-releases"}, "summary": "Britain's largest wafer fab producing 30,000+ automotive-grade power semiconductors monthly for electric vehicles and industrial systems."}}]}